Pattern-forming method
A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing the silicon-containing film with a basic aqueous solution. The pattern-forming method does not include, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound. The silicon-containing film is preferably formed a hydrolytic condensation product of a composition containing a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds. X represents a halogen atom or —OR 2 , and R 2 represents a monovalent organic group. SiX 4 (1)
1. A pattern-forming method comprising:
forming a resist underlayer film on an upper face side of a substrate;
forming a silicon-containing film on an upper face side of the resist underlayer film;
forming a resist pattern on an upper face side of the silicon-containing film;
dry etching the silicon-containing film using the resist pattern as a mask; and
removing the silicon-containing film with a basic aqueous solution,
wherein when the resist pattern remains before the removing of the silicon-containing film, the resist pattern is removed together with the silicon-containing film in the removing of the silicon-containing film,
wherein a concentration of the basic aqueous solution is from 0.1% by mass to 40% by mass,
wherein the pattern-forming method does not comprise, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound, and
wherein the silicon-containing film is formed from a hydrolytic condensation product of a composition comprising a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds,
SiX 4 (1)
wherein, in the formula (1), X represents a halogen atom or —OR 2 , wherein R 2 represents a monovalent organic group.
2. The pattern-forming method according to claim 1 , wherein the basic aqueous solution is a liquid comprising tetraalkylammonium hydroxide and water, or a liquid obtained by mixing ammonia, hydrogen peroxide and water.
3. The pattern-forming method according to claim 1 , wherein the basic aqueous solution comprises none of hydrogen fluoride, a salt thereof, and a salt of a fluorine compound.
4. The pattern-forming method according to claim 1 , wherein the removing of the silicon-containing film is carried out at a temperature of less than 100° C.
5. The pattern-forming method according to claim 1 , wherein the silicon-containing film is formed from a composition comprising:
a hydrolytic condensation product of a silane compound comprising a compound represented by formula (2); and
an organic solvent,
R 1 a SIX 4-a (2)
wherein, in the formula (2),
R 1 represents a hydrogen atom, a fluorine atom, an alkyl group having 1 to 5 carbon atoms, a cyano group, a cyanoalkyl group, an alkylcarbonyloxy group, an acid anhydride group, an alkenyl group, an aryl group or an aralkyl group, wherein the alkyl group is unsubstituted or substituted with a fluorine atom, and the aryl group and the aralkyl group are unsubstituted or substituted;
X represents a halogen atom or —OR 2 , wherein R 2 represents a monovalent organic group; and
a is an integer of 0 to 3, wherein in a case where R′ and X are each present in a plurality of number, a plurality of R's are identical or different and a plurality of Xs are identical or different.
6. The pattern-forming method according to claim 5 , wherein the silane compound comprises an aromatic ring.
7. The pattern-forming method according to claim 5 , wherein the silane compound comprises the acid anhydride group.
8. A pattern-forming method comprising:
forming a resist underlayer film on an upper face side of a substrate;
forming a silicon-containing film on an upper face side of the resist underlayer film;
forming a resist pattern on an upper face side of the silicon-containing film;
dry etching the silicon-containing film using the resist pattern as a mask; and
removing the silicon-containing film with a basic aqueous solution which comprises ammonia, hydrogen peroxide and water, at a temperature of less than 100° C.,
wherein when the resist pattern remains before the removing of the silicon-containing film, the resist pattern is removed together with the silicon-containing film in the removing of the silicon-containing film,
wherein a concentration of the basic aqueous solution is from 0.1% by mass to 40% by mass,
wherein the pattern-forming method does not comprise, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound and
wherein the silicon-containing film is formed from a hydrolytic condensation product of a composition comprising a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds,
SiX 4 (1)
wherein, in the formula (1), X represents a halogen atom or —OR 2 , wherein R 2 represents a monovalent organic group.
9. The pattern-forming method according to claim 1 , wherein a weight average molecular weight (Mw) of a polysiloxane included in the silicon-containing film as determined by gel permeation chromatography (GPC) is from 1,000 to 20,000.
10. The pattern-forming method according to claim 1 , wherein a weight average molecular weight (Mw) of a polysiloxane included in the silicon-containing film as determined by gel permeation chromatography (GPC) is from 1,000 to 7,000.
11. The pattern-forming method according to claim 1 , wherein the concentration of the basic aqueous solution is from 0.5% by mass to 30% by mass.
12. The pattern-forming method according to claim 8 , wherein the basic aqueous solution comprises none of hydrogen fluoride, a salt thereof, and a salt of a fluorine compound.
13. The pattern-forming method according to claim 8 , wherein the silicon-containing film is formed from a composition comprising:
a hydrolytic condensation product of a silane compound comprising a compound represented by formula (2); and
an organic solvent,
R 1 a SIX 4-a (2)
wherein, in the formula (2),
R 1 represents a hydrogen atom, a fluorine atom, an alkyl group having 1 to 5 carbon atoms, a cyano group, a cyanoalkyl group, an alkylcarbonyloxy group, an acid anhydride group, an alkenyl group, an aryl group or an aralkyl group, wherein the alkyl group is unsubstituted or substituted with a fluorine atom, and the aryl group and the aralkyl group are unsubstituted or substituted;
X represents a halogen atom or —OR 2 , wherein R 2 represents a monovalent organic group; and
a is an integer of 0 to 3, wherein in a case where R 1 and X are each present in a plurality of number, a plurality R 1 s are identical or different and a plurality of Xs are identical or different.
14. The pattern-forming method according to claim 13 , wherein the silane compound comprises an aromatic ring.
15. The pattern-forming method according to claim 13 , wherein the silane compound comprises the acid anhydride group.
16. The pattern-forming method according to claim 8 , wherein a weight average molecular weight (Mw) of a polysiloxane included in the silicon-containing film as determined by gel permeation chromatography (GPC) is from 1,000 to 20,000.
17. The pattern-forming method according to claim 8 , wherein a weight average molecular weight (Mw) of a polysiloxane included in the silicon-containing film as determined by gel permeation chromatography (GPC) is from 1,000 to 7,000.
18. The pattern-forming method according to claim 8 , wherein the concentration of the basic aqueous solution is from 0.5% by mass to 30% by mass.