IP Library Granted Patent US 10,490,588
Granted Patent B2
US 10,490,588 · App. 15/268,183 · Granted Nov 26, 2019

Methods and apparatus for a thermal equalizer in an image sensor

Inventors: Larry Duane Kinsman (Boise, ID); Swarnal Borthakur (Boise, ID); Marc Allen Sulfridge (Boise, ID)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H01L27/14634H01L21/563H01L23/373H01L23/3732H01L27/1462H01L27/1469H01L27/14601H01L27/14636H01L31/0203H01L31/024
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Quick Facts
Patent No.
US 10,490,588
App. No.
15/268,183
Granted
Nov 26, 2019
Kind
B2
Abstract

Various embodiments of the present technology may comprise a method and apparatus for an image sensor with a thermal equalizer for distributing heat. The method and apparatus may comprise a thermal equalizer disposed between a sensor die and a circuit die to prevent uneven heating of the pixels in the sensor die. The method and apparatus may comprise a thermal equalizer integrated within the circuit die.

Claims (37)

1. An image sensor, comprising:

a first die comprising:

a first major surface, and

a plurality of photosensitive elements;

a second die electrically coupled to the first die, wherein the second die comprises:

a second major surface disposed adjacent to the first major surface; and

processing circuitry;

a first thermally conductive layer, having a first thermal conductivity, disposed between the first and second major surfaces, wherein the first thermally conductive layer comprises a continuous layer and is patterned to selectively distribute heat from a first area of the second die to a second area of the second die; and

a plurality of electrical interconnects substantially perpendicular to the first and second major surfaces, wherein:

a portion of each electrical interconnect is surrounded by and abuts the continuous first thermally conductive layer; and

the electrical interconnects are electrically insulated from each other.

2. The image sensor of claim 1 , wherein at least one of the electrical interconnects extends from the first die into the second die.

3. The image sensor of claim 1 , further comprising a second thermally conductive layer, having a second thermal conductivity, coplanar with the first thermally conductive layer, and disposed in a negative space created by the patterned first thermally conductive layer.

4. The image sensor of claim 3 , further comprising a third thermally conductive layer, having a third thermal conductivity, wherein the third thermally conductive layer is disposed between the first thermally conductive layer and at least one of the first and second major surfaces.

5. The image sensor of claim 4 , wherein at least one of the first, second, and third thermally conductive layers comprises at least one of nano-crystalline diamond and boron arsenide.

6. The image sensor of claim 1 , wherein the second die comprises a second thermally conductive layer integrated within the die.

7. The image sensor of claim 1 , wherein the first thermally conductive layer is patterned according to a thermal gradient of the second die and extends to cover both the first area and the second area.

8. An imaging system, comprising:

an image sensor comprising:

a first die comprising:

a first major surface; and

a plurality of photosensitive elements;

a second die electrically coupled to the first die, wherein the second die comprises:

a second major surface disposed adjacent to the first major surface; and

processing circuitry;

a first thermally conductive layer, having a first thermal conductivity, disposed between the first and second major surfaces; wherein the first thermally conductive layer is patterned according to a thermal gradient of the second die;

a second thermally conductive layer, having a second thermal conductivity, disposed adjacent to the first thermally conductive layer and between the first and second major surfaces; and

a plurality of electrical interconnects perpendicular to the first and second major surfaces, wherein:

a portion of each electrical interconnect is surrounded by and abuts the first and second thermally conductive layers;

at least one of the electrical interconnects extends from the first die into the second die; and

the electrical interconnects are electrically insulated from each other;

a central processing unit electrically coupled to the image sensor; and

a memory device electrically coupled to the central processing unit.

9. The imaging system of claim 8 , wherein the first thermally conductive layer is patterned to selectively distribute heat from a first area of the second die to a second area of the second die.

10. The imaging system of claim 8 , further comprising a third thermally conductive layer, having a third thermal conductivity, coplanar with the first thermally conductive layer, and disposed in a negative space created by the patterned first thermally conductive layer.

11. The imaging system of claim 10 , wherein the second die comprises a fourth thermally conductive layer integrated within the die.

12. The imaging system of claim 11 , wherein at least one of the first, second, third and fourth thermally conductive layers comprises at least one of nano-crystalline diamond and boron arsenide.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 041187, FRAME 0295 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064151/0203 →
SECURITY INTEREST Recorded Dec 23, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 041187/0295 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 16, 2016
From: KINSMAN, LARRY DUANE; BORTHAKUR, SWARNAL; SULFRIDGE, MARC ALLEN
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 039769/0673 →
Continuity (1)
Related Publication 20180083058A1 · Mar 22, 2018