Detector, detector with lock-in amplifier, substrate, and method for manufacturing a detector

1. A detection device, comprising:

a plurality of photoelectric converters to output an electrical signal corresponding to an incident light; and

a plurality of filter circuits provided corresponding to each of the plurality of photoelectric converters or to each of a plurality of element groups respectively including a predetermined number of the photoelectric converters of the plurality of photoelectric converters, the plurality of filter circuits to attenuate a signal having a predetermined frequency from the electrical signal that is output from the plurality of photoelectric converters, wherein

the plurality of photoelectric converters are provided in a first substrate,

the plurality of filter circuits are provided in a second substrate laminated on the first substrate, and

the second substrate has a resistance circuit including a field effect transistor that operates in a saturated region.

2. The detection device according to claim 1 , wherein the resistance circuit includes a control circuit to block a current between a drain and a source of the field effect transistor if the photoelectric converters are not receiving lights.

3. The detection device according to claim 1 , wherein the resistance circuit has a capacitor that holds a control voltage applied to a control terminal of the field effect transistor.

4. The detection device according to claim 1 , wherein the resistance circuit includes a plurality of field effect transistors that individually perform conduction.

5. The detection device according to claim 4 , wherein an electric characteristic changing in the resistance circuit includes at least one of a gm value, a resistance value, and a capacity value.

6. The detection device according to claim 4 , wherein the plurality of field effect transistors have the same characteristics as each other.

7. The detection device according to claim 4 , wherein the plurality of field effect transistors have different characteristics from each other.

8. The detection device according to claim 1 , wherein the resistance circuit has a resistor, and at least a part of the resistor is formed of polysilicon.

9. The detection device according to claim 8 , wherein the second substrate has a conductive via that is in charge of electrical connection, the conductive via penetrating the second substrate in a thickness direction, and the resistor has an electric resistance value higher than that of the conductive via.

10. The detection device according to claim 1 , wherein each of the plurality of filter circuits has a capacitor, and wherein the capacitor is provided in a recess or a through hole, the recess or the through hole formed in the second substrate.

11. The detection device according to claim 10 , wherein the second substrate has a conductive via that is in charge of electrical connection, the conductive via penetrating the second substrate in a thickness direction, and wherein

the capacitor has an electrical capacity greater than that of the conductive via.

12. The detection device according to claim 10 , wherein the capacitor includes:

a pair of electrodes formed coaxially relative to a central axis that penetrates the second substrate, and an annular dielectric sandwiched by the pair of electrodes, the capacitor extending in a thickness direction of the second substrate.

13. The detection device according to claim 10 , wherein the capacitor includes an electrode formed in the first substrate and an electrode formed in the second substrate.

14. The detection device according to claim 1 , wherein

the second substrate has a plurality of substrates, and

the filter circuits have a resistor and a capacitor, and wherein

the resistor and the capacitor are respectively provided in the different substrates from each other.

15. A detection device, comprising:

a first photoelectric converter, included in a first substrate, to output a first electrical signal corresponding to an incident light including a reflection light from a detection object and a background light that is different from the reflection light;

a second photoelectric converter, included in the first substrate, to output a second electrical signal corresponding to the incident light;

a first filter circuit, included in a second substrate laminated on the first substrate, to reduce, from the first electrical signal output from the first photoelectric converter, a signal of a frequency of the background light;

a second filter circuit to reduce, from the second electrical signal output from the second photoelectric converter, a signal of a frequency or the background light; and

a detection section to detect a distance to the detection object using at least one of a signal output from the first filter circuit and a signal output from the second filter circuit.

16. The detection device according to claim 15 , wherein the first filter circuit and the second filter circuit have a resistance component using a field effect transistor that operates in a saturated region.

17. The detection device according to claim 16 , wherein the first filter circuit and the second filter circuit have a capacitance component, and

the detection section detects the distance to the detection object using a signal whose frequency is higher than a frequency of the background light output from the first filter circuit and the second filter circuit.

18. An electronic device comprising the detection device according to claim 1 .

19. An electronic device comprising the detection device according to claim 15 .

20. A method for manufacturing a detection device, comprising:

forming, in a first substrate, a plurality of photoelectric converters that output an electrical signal corresponding to an incident light;

forming, in a second substrate, (i) a plurality of filter circuits corresponding to each of the plurality of photoelectric converters or to each of a plurality of element groups respectively including a predetermined number of the photoelectric converters of the plurality of photoelectric converters, the plurality of filter circuits attenuating, from the electrical signal output from the plurality of photoelectric converters, a signal having a predetermined frequency, and (ii) a resistance circuit including a field effect transistor that operates in a saturated region; and

alternately laminating the first substrate and the second substrate.

21. The method according to claim 20 , wherein the forming in the second substrate includes

forming, in a second substrate, a reduction section that reduces, from the electrical signal output from the photoelectric converter, a component corresponding to a background light included in the incident light.

22. A method for manufacturing a detection device, comprising:

forming, in a first substrate, (i) a first photoelectric converter to output a first electrical signal corresponding to an incident light including a reflection light from a detection object and a background light that is different from the reflection light, and (ii) a second photoelectric converter to output a second electrical signal corresponding to the incident light;

forming, in a second substrate, a first filter circuit to reduce, from the first electrical signal output from the first photoelectric converter, a signal of a frequency of the background light;

laminating the second substrate on the first substrate,

forming a second filter circuit to reduce, from the second electrical signal output from the second photoelectric converter, a signal of a frequency of the background light; and

forming a detection section lo detect a distance to the detection object using at least one of a signal output from the first filter circuit and a signal output from the second filter circuit.

23. The method according to claim 22 , wherein

the first filter circuit and the second filter circuit have a resistance component using a field effect transistor that operates in a saturated region.