Semiconductor device
In the semiconductor device, a bump electrode which connects a semiconductor chip and a wiring board is made up of a first part surrounded by an insulating film and a second part exposed from the insulating film. Since it is possible to reduce a width of the bump electrode while increasing a height of the bump electrode, a distance between the neighboring bump electrodes can be increased, and a filling property of a sealing material can be improved.
1. A semiconductor device comprising:
a semiconductor substrate;
a conductive layer formed on the semiconductor substrate;
a first insulating film which is formed on the conductive layer and covers the conductive layer;
a second insulating film which is formed on the first insulating film and includes an opening which exposes a part of a surface of the conductive layer;
a bump electrode which is made up of a first part which is in contact with the conductive layer and positioned in the opening and a second part which is positioned on the opening and exposed from the second insulating film;
a terminal which is connected to the bump electrode and is formed on a surface of a wiring board; and
a sealing material which fills a gap between the semiconductor substrate and the wiring board,
wherein the sealing material is in contact with the first insulating film on an outer side of the second insulating film which covers the periphery of the first part of the bump electrode.
2. The semiconductor device according to claim 1 ,
wherein a height of the first part is larger than a height of the second part.
3. The semiconductor device according to claim 1 ,
wherein a width of the first part is smaller than a width of the second part.
4. The semiconductor device according to claim 1 ,
wherein the second insulating film covers a periphery of the first part of the bump electrode.
5. The semiconductor device according to claim 4 ,
wherein a film thickness of the second insulating film is larger than a film thickness of the first insulating film.
6. The semiconductor device according to claim 1 ,
wherein the sealing material covers a periphery of the second part of the bump electrode and is in contact with a side surface of the second part.
7. The semiconductor device according to claim 1 further comprising:
a third insulating film which covers the surface of the wiring board and exposes the terminal.
8. The semiconductor device according to claim 7 ,
wherein the sealing material is in contact with the third insulating film.
9. The semiconductor device according to claim 1 further comprising:
a pad electrode provided on the semiconductor substrate,
wherein the conductive layer is connected to the pad electrode.
10. The semiconductor device according to claim 9 ,
wherein a film thickness of the conductive layer is larger than a film thickness of the pad electrode.
11. The semiconductor device according to claim 1 ,
wherein the second insulating film is made of a polyimide film.
12. The semiconductor device according to claim 1 ,
wherein the first insulating film is made of a polyimide film.
13. The semiconductor device according to claim 1 ,
wherein the bump electrode is made of ternary alloy containing tin, silver and copper.
14. The semiconductor device according to claim 1 ,
wherein the semiconductor substrate has a rectangular shape,
the semiconductor device further comprising: a dummy bump electrode that is arranged at a corner portion of the semiconductor substrate.