IP Library Granted Patent US 9,947,279
Granted Patent B2
US 9,947,279 · App. 15/271,520 · Granted Apr 17, 2018

Data-holding circuit and substrate for a display device

Inventors: Kenichi Takatori (Tokyo, JP); Hiroshi Haga (Tokyo, JP)
Assignee: NLT TECHNOLOGIES, LTD.
G09G3/3648G02F1/13454G09G3/3611G11C7/1006G11C7/1012G11C7/1051G11C11/4091G11C11/4093G11C11/4096G09G2300/0408G09G2310/0294G09G2330/021G09G2360/18
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Quick Facts
Patent No.
US 9,947,279
App. No.
15/271,520
Granted
Apr 17, 2018
Kind
B2
Abstract

A display device has a data-holding circuit with a capacitance and a display portion with a plurality of pixel electrodes, formed on a first carrier substrate. In the display device, a second carrier substrate disposed opposite the first carrier substrate is placed above the display portion, but the opposing substrate is not present above the area in which the data-holding circuit is disposed. The parasitic capacitance of the data-holding circuit can thereby be reduced. Therefore, the capacitance in the data-holding circuit can be reduced and the area required can be reduced as well. The display data of all the pixels is sent serially to the liquid crystal module without high-speed transfer for each frame time interval, and size can be reduced because the controller IC and interface circuit are formed on the same substrate as the display device substrate.

Claims (8)

1. A display device comprising:

a data-holding circuit having a capacitance;

a display portion having a plurality of pixel electrodes;

a first carrier substrate on which the data-holding circuit and the display portion are formed; and

a second carrier substrate that is disposed opposite to the first carrier substrate being placed above the display portion, an opposing substrate being absent above an area in which the data-holding circuit is disposed, wherein

the carrier substrate on which the capacitance is formed is the same carrier substrate on which the pixel electrodes are formed, wherein the data-holding circuit comprises a DRAM, and wherein a retention time of memory cells of the DRAM is longer than a read operation period of the memory cells of the DRAM, a read operation being performed in accordance with a display operation of the display portion that operates on a predetermined periodic basis, wherein the memory cells of the DRAM are refreshed solely during the read operation period of the memory cells, and wherein a duration of the read operation period of the memory cells is the same as a duration of a read operation period of the display portion.

2. The display device according to claim 1 , wherein a source and drain of at least one transistor in the data-holding circuit has an LDD structure.

3. The display device according to claim 1 , wherein the read operation period is 16.7 milliseconds.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2019
From: TIANMA JAPAN, LTD.
To: TIANMA MICROELECTRONICS CO., LTD.
Reel/Frame 050395/0931 →
CHANGE OF NAME Recorded Sep 12, 2019
From: NLT TECHNOLOGIES, LTD.
To: TIANMA JAPAN, LTD.
Reel/Frame 050359/0923 →
Priority Claims (1)
JP 2005-336426 · Nov 21, 2005 · national
Continuity (3)
Continuation 13410570 · Mar 2, 2012
Continuation 11437929 · May 19, 2006
Related Publication 20170011697A1 · Jan 12, 2017