Organometal halide perovskit nanoplatelets, devices, and methods
Provided herein are metal halide perovskite nanoplatelets, methods for making metal halide perovskite nanoplatelets, and devices and composite materials that include metal halide nanoperovskite nanoplatelets. The metal halide perovskite nanoplatelets may be stable at ambient temperature and pressure, thereby easing device fabrication.
1. A metal halide perovskite comprising:
a nanoplatelet comprising an alkylammonium metal halide and a capping ligand;
wherein the nanoplatelet has a surface having a width of about 100 nm to about 300 nm and a length of about 100 nm to about 300 nm, and
the capping ligand comprises a compound of formula (1),
wherein R 1 is a monovalent C 1 -C 20 hydrocarbyl, and X is Cl or I.
2. The metal halide perovskite of claim 1 , wherein R 1 is a monovalent C 6 -C 20 hydrocarbyl.
3. The metal halide perovskite of claim 1 , wherein the alkylammonium metal halide is an alkylammonium lead halide, alkylammonium tin halide, alkylammonium germanium halide, alkylammonium manganese halide, alkylammonium cobalt halide, alkylammonium bismuth halide, or alkylammonium europium halide.
4. The metal halide perovskite of claim 1 , wherein the alkylammonium metal halide is a methylammonium lead halide.
5. The metal halide perovskite of claim 1 , wherein the nanoplatelet is a single crystalline nanoplatelet.
6. A composite material comprising:
at least one nanoplatelet comprising an alkylammonium metal halide and a capping ligand; and
a solid matrix material; wherein the at least one nanoplatelet is disposed in the matrix material, the at least one nanoplatelet has a surface having a width of about 50 nm to about 300 nm and a length of about 50 nm to about 300 nm, and the capping ligand comprises a compound of formula (1),
wherein R 1 is a monovalent C 1 -C 20 hydrocarbyl, and X is Cl, Br, or I.
7. The composite material of claim 6 , wherein the capping ligand is n-octylammonium bromide:
8. The composite material of claim 6 , wherein the alkylammonium metal halide is a methylammonium lead bromide.
9. The composite material of claim 6 , wherein the alkylammonium metal halide is methylammonium lead bromide, and the capping ligand is n-octylammonium bromide.
10. The composite material of claim 6 , wherein the matrix material comprises PVK and PBD at a PVK:PBD weight ratio of about 70:30 to about 50:50.
11. The composite material of claim 6 , wherein the composite material is a film, and a surface of the at least one nanoplatelet is substantially parallel to a surface of the film.
12. An optoelectronic device comprising:
at least one metal halide perovskite, wherein the at least one metal halide perovskite (i) is a light emitting material, and (ii) comprises a nanoplatelet comprising an alkylammonium metal halide and a capping ligand,
wherein the nanoplatelet has a surface having a width of about 100 nm to about 300 nm and a length of about 100 nm to about 300 nm, and the capping ligand comprises a compound of formula (1),
wherein R 1 is a monovalent C 1 -C 20 hydrocarbyl, and X is Cl, Br, or I.
13. The optoelectronic device of claim 12 , further comprising a matrix material, wherein the at least one metal halide perovskite is disposed in the matrix material.
14. The optoelectronic device of claim 13 , wherein the matrix material is a bipolar host matrix material comprising PVK and PBD at a PVK:PBD weight ratio of about 70:30 to about 50:50.
15. The optoelectronic device of claim 12 , further comprising:
a substrate,
an electrode disposed on the substrate, and
a counter electrode, wherein the at least one metal halide perovskite is arranged between the electrode and the counter electrode.
16. The optoelectronic device of claim 15 , further comprising a hole injection layer arranged between the electrode and the at least one metal halide perovskite.
17. The optoelectronic device of claim 16 , wherein the hole injection layer comprises PEDOT:PSS.
18. The optoelectronic device of claim 16 , wherein the at least one metal halide perovskite is in contact with and arranged between the hole injection layer and a matrix material.
19. The optoelectronic device of claim 18 , wherein the matrix material comprises PVK and PBD at a PVK:PBD weight ratio of about 70:30 to about 50:50.
20. The optoelectronic device of claim 15 , further comprising an electron transport layer, wherein the electron transport layer is arranged between the counter electrode and the at least one metal halide perovskite.
21. The optoelectronic device of claim 20 , wherein the electron transport layer comprises BCP.
22. The optoelectronic device of claim 12 , wherein the optoelectronic device is a photovoltaic cell, a light emitting diode, a light emitting electrochemical cell, a photodetector, or an optically pumped laser.