Method of manufacturing semiconductor device

1. A method of manufacturing a semiconductor device, comprising:

(a) loading a substrate into a process chamber;

(b) processing the substrate by performing:

(b-1) supplying and exhausting a process gas into and from the process chamber without activating the process gas;

(b-2) supplying and exhausting the process gas into and from the process chamber while activating the process gas;

(b-3) measuring an amount of impurity desorbed from the substrate while performing (b-2); and

(b-4) measuring a gas exhausted from the process chamber after performing (b-3);

(c) calculating a process data based on: a first measurement data obtained by repeating (b-3); and a second measurement data obtained by repeating (b-4); and

(d) determining whether to terminate (b) based on the process data.

2. The method of claim 1 , further comprising: (e) adjusting an electric power used for activating the process gas in (b-2) based on the process data before performing (d).

3. The method of claim 1 , wherein a portion of the gas exhausted from the process chamber and introduced into a measurement chamber is analyzed in (b-3).

4. The method of claim 2 , wherein a portion of the gas exhausted from the process chamber and introduced into a measurement chamber is analyzed in (b-3).

5. The method of claim 1 , wherein the amount of impurity desorbed from the substrate is measured in (b-3) by measuring an intensity of light emitted from the impurity, the light being generated by plasma generated by activating the process gas.

6. The method of claim 2 , wherein the amount of impurity desorbed from the substrate is measured in (b-3) by measuring an intensity of light emitted from the impurity, the light being generated by plasma generated by activating the process gas.

7. The method of claim 3 , wherein the amount of impurity desorbed from the substrate is measured in (b-3) by measuring an intensity of light emitted from the impurity, the light being generated by plasma generated by activating the process gas.

8. The method of claim 4 , wherein the amount of impurity desorbed from the substrate is measured in (b-3) by measuring an intensity of light emitted from the impurity, the light being generated by plasma generated by activating the process gas.

9. The method of claim 1 , further comprising:

(f) measuring a stress of the substrate before and after performing (b-2); and

(g) terminating (b) based on the stress measured in (f).

10. The method of claim 2 , further comprising:

(f) measuring a stress of the substrate before and after performing (b-2); and

(g) terminating (b) based on the stress measured in (f).

11. The method of claim 3 , further comprising:

(f) measuring a stress of the substrate before and after performing (b-2); and

(g) terminating (b) based on the stress measured in (f).

12. The method of claim 5 , further comprising:

(f) measuring a stress of the substrate before and after performing (b-2); and

(g) terminating (b) based on the stress measured in (f).

13. The method of claim 6 , further comprising:

(f) measuring a stress of the substrate before and after performing (b-2); and

(g) terminating (b) based on the stress measured in (f).

14. The method of claim 7 , further comprising:

(f) measuring a stress of the substrate before and after performing (b-2); and

(g) terminating (b) based on the stress measured in (f).

15. The method of claim 8 , further comprising:

(f) measuring a stress of the substrate before and after performing (b-2); and

(g) terminating (b) based on the stress measured in (f).