IP Library Granted Patent US 9,835,801
Granted Patent B1
US 9,835,801 · App. 15/273,615 · Granted Dec 5, 2017

Edge construction on optical devices

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Quick Facts
Patent No.
US 9,835,801
App. No.
15/273,615
Granted
Dec 5, 2017
Kind
B1
Abstract

A method of forming an optical device includes forming a waveguide mask on a device precursor. The device precursor includes a waveguide positioned on a base. The method also includes forming a facet mask on the device precursor such that at least a portion of the waveguide mask is between the facet mask and the base. The method also includes removing a portion of the base while the facet mask protects a facet of the waveguide.

Claims (58)

1. A method of forming an optical device, comprising:

forming a waveguide mask on a device precursor,

the device precursor including a waveguide positioned on a base;

forming a facet mask on the device precursor such that at least a portion of the waveguide mask is between the facet mask and the base; and

forming a recess in the base while a protective portion of the facet mask is over a facet of the waveguide, the protective portion of the facet mask also being over a facet shelf that extends from a side of the recess.

2. The method of claim 1 , further comprising:

placing an optical fiber in the recess such that a facet of the optical fiber is aligned with the facet of the waveguide.

3. The method of claim 1 , further comprising:

removing a portion of the device precursor after forming the waveguide mask and before forming the facet mask, the portion of the device precursor being removed so as to define the facet on the device precursor.

4. The method of claim 1 , wherein the side of the recess is less than 0.5 μm from the facet.

5. The method of claim 1 , further comprising:

removing a first portion of the facet mask from over the waveguide after forming the facet mask and before forming the recess.

6. The method of claim 5 , wherein a thickness of the protective portion of the facet mask over the facet is less than 0.5 μm, where the thickness is measured in a direction perpendicular to the facet.

7. The method of claim 6 , wherein the thickness of the protective portion of the facet mask varies across the facet and a maximum of the thickness is less than 0.5 μm.

8. The method of claim 5 , further comprising:

removing the protective portion of the facet mask.

9. The method of claim 1 , wherein the facet mask is not a photoresist.

10. The method of claim 9 , wherein the waveguide mask is a photoresist.

11. The method of claim 1 , wherein the waveguide and the facet shelf are located on opposing sides of the facet.

12. The method of claim 1 , wherein the facet shelf has a width less than 0.5 μm.

13. The method of claim 1 , wherein after forming the recess, the facet is flush with a portion of the base.

14. The method of claim 1 , wherein after forming the recess a second portion of the base that remains on the device precursor undercuts the waveguide.

15. The method of claim 1 , further comprising:

removing from the device precursor the protective portion of the facet mask.

16. The method of claim 15 , wherein the waveguide and the facet shelf are located on opposing sides of the facet, and

the protective portion of the facet mask is removed such that a thickness of the facet shelf is reduced,

the thickness of the facet shelf being measured in a direction that is perpendicular to a plane that includes the facet.

17. A method of forming an optical device, comprising:

forming a waveguide mask on a device precursor,

the device precursor including a waveguide positioned on a base;

forming a facet mask on the device precursor such that at least a portion of the waveguide mask is between the facet mask and the base; and

removing a portion of the base while the facet mask protects a facet of the waveguide, the portion of the base being removed such that after removing the portion of the base the facet is above a facet shelf that extends outward from a plane that includes the facet with the waveguide and the facet shelf being on opposing sides of the facet, the facet shelf having a width less than 0.5 μm.

18. The method of claim 17 , wherein removing the portion of the base forms a recess in the base and further comprising:

placing an optical fiber in the recess such that a facet of the optical fiber is aligned with the facet of the waveguide.

19. The method of claim 17 , wherein removing the portion of the base forms a recess in the base and a side of the recess is less than 0.5 μm from a plane that includes the facet.

20. The method of claim 17 , further comprising:

removing a first portion of the facet mask from over the waveguide after forming the facet mask and before removing the portion of the base.

21. A method of forming an optical device, comprising:

forming a waveguide mask on a device precursor,

the device precursor including a waveguide positioned on a base;

forming a facet mask on the device precursor such that at least a portion of the waveguide mask is between the facet mask and the base;

removing a portion of the base while the facet mask protects a facet of the waveguide, the portion of the base being removed such that after removing the portion of the base the facet is above a facet shelf that extends outward from a plane that includes the facet with the waveguide and the facet shelf being on opposing sides of the facet; and

removing from the device precursor a protective portion of the facet mask, the protective portion of the facet mask being a portion of the facet mask that remains on the device precursor after the portion of the base is removed, the protective portion of the facet mask being removed such that a thickness of the facet shelf is reduced, the thickness of the facet shelf being measured in a direction that is perpendicular to a plane that includes the facet.

22. The method of claim 21 , wherein removing the portion of the base forms a recess in the base and further comprising:

placing an optical fiber in the recess such that a facet of the optical fiber is aligned with the facet of the waveguide.

23. The method of claim 21 , wherein removing the portion of the base forms a recess in the base and a side of the recess is less than 0.5 μm from a plane that includes the facet.

24. The method of claim 21 , further comprising:

removing a first portion of the facet mask from over the waveguide after forming the facet mask and before removing the portion of the base.

25. A method of forming an optical device, comprising:

forming a waveguide mask on a device precursor,

the device precursor including a waveguide positioned on a base;

forming a facet mask on the device precursor such that at least a portion of the waveguide mask is between the facet mask and the base; and

removing a portion of the base while the facet mask protects a facet of the waveguide, the portion of the base being removed such that after removing the portion of the base a second portion of the base that remains on the device precursor undercuts the waveguide.

26. The method of claim 25 , wherein removing the portion of the base forms a recess in the base and further comprising:

placing an optical fiber in the recess such that a facet of the optical fiber is aligned with the facet of the waveguide.

27. The method of claim 25 , wherein removing the portion of the base forms a recess in the base and a side of the recess is less than 0.5 μm from a plane that includes the facet.

28. The method of claim 25 , further comprising:

removing a first portion of the facet mask from over the waveguide after forming the facet mask and before removing the portion of the base.

Assignments (4)
MERGER Recorded Aug 16, 2023
From: MELLANOX TECHNOLOGIES SILICON PHOTONICS INC.
To: MELLANOX TECHNOLOGIES, INC.
Reel/Frame 064602/0330 →
RELEASE OF SECURITY INTEREST IN PATENT COLLATERAL AT REEL/FRAME NO. 42962/0859 Recorded Jul 13, 2018
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MELLANOX TECHNOLOGIES, LTD.; MELLANOX TECHNOLOGIES TLV LTD.; MELLANOX TECHNOLOGIES SILICON PHOTONICS INC.
Reel/Frame 046551/0459 →
SECURITY INTEREST Recorded Jun 23, 2017
From: MELLANOX TECHNOLOGIES, LTD.; MELLANOX TECHNOLOGIES TLV LTD.; MELLANOX TECHNOLOGIES SILICON PHOTONICS INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 042962/0859 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 19, 2016
From: QIAN, WEI; SHARMA, MONISH
To: MELLANOX TECHNOLOGIES SILICON PHOTONICS INC.
Reel/Frame 040382/0116 →