IP Library Granted Patent US 10,325,906
Granted Patent B2
US 10,325,906 · App. 15/274,356 · Granted Jun 18, 2019

ESD testing structure, method of using same and method of forming same

Inventors: Tzu-Heng Chang (New Taipei, TW); Jen-Chou Tseng (Jhudong Township, TW); Ming-Hsiang Song (Shin-Chu, TW)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
H01L27/0288G01R31/002G01R31/2856H01L22/14H01L22/30H01L23/62
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Quick Facts
Patent No.
US 10,325,906
App. No.
15/274,356
Granted
Jun 18, 2019
Kind
B2
Abstract

An electrostatic discharge (ESD) testing structure includes a measurement device in a first die. The ESD testing structure further includes a fuse in a second die. The ESD testing structure further includes a plurality of bonds electrically connecting the first die to the second die, wherein a first bond of the plurality of bonds electrically connects the fuse to the measurement device.

Claims (37)

1. An electrostatic discharge (ESD) testing structure comprising:

a measurement device in a first die;

a fuse, a first trim pad, and a second trim pad in a second die; and

a plurality of bonds electrically connecting the first die to the second die, wherein a first bond of the plurality of bonds electrically connects the fuse to the measurement device, the first trim pad is electrically connected to a first side of the fuse, and the second trim pad is electrically connected to the second side of the fuse.

2. The ESD testing structure of claim 1 , wherein the measurement device is configured to detect a voltage during an ESD event.

3. The ESD testing structure of claim 2 , wherein the measurement device comprises a capacitor.

4. The ESD testing structure of claim 1 , wherein the measurement device is configured to detect a current during an ESD event.

5. The ESD testing structure of claim 4 , wherein the measurement device comprises at least one diode.

6. The ESD testing structure of claim 5 , wherein the measurement device further includes a current recording structure.

7. The ESD testing structure of claim 6 , wherein the current recording structure is electrically between the at least one diode and the fuse.

8. The ESD testing structure of claim 6 , wherein the at least one diode is between the fuse and the current recording structure.

9. The ESD testing structure of claim 6 , wherein the current recording structure comprises:

a plurality of resistors; and

a plurality of fuses, wherein each resistor of the plurality of resistors is electrically connected in series with a corresponding fuse of the plurality of fuses.

10. The ESD testing structure of claim 9 , wherein each fuse of the plurality of fuses has a different threshold value for blowing the corresponding fuse.

11. The ESD testing structure of claim 1 , further comprising a second fuse between the measurement device and the first bond, wherein the measurement device is configured to electrically connect in parallel with a victim device.

12. The ESD testing structure of claim 1 , further comprising:

a plurality of measurement devices in the first die; and

a plurality of fuses in the second die, wherein each measurement device of the plurality of measurement devices is electrically connected to a corresponding fuse of the plurality of fuses through a corresponding bond of the plurality of bonds.

13. An electrostatic discharge (ESD) testing structure comprising:

a first measurement device in a first die;

a first fuse in a device structure;

a second measurement device in a second die;

a second fuse outside the second die;

a first plurality of bonds electrically connecting the first die to the device structure, wherein a bond of the first plurality of bonds electrically connects the first measurement device to the first fuse; and

a second plurality of bonds electrically connecting the second die to the first die, wherein a bond of the second plurality of bonds electrically connects the second measurement device to the second fuse.

14. The ESD testing structure of claim 13 , wherein the second fuse is in the first die.

15. The ESD testing structure of claim 13 , wherein the second fuse is in the device structure.

16. The ESD testing structure of claim 15 , further comprising a conductive structure extending through the first die to electrically connect the second measurement device to the second fuse.

17. The ESD testing structure of claim 13 , wherein a structure of the first measurement device is a same structure as the second measurement device.

18. The ESD testing structure of claim 13 , wherein a structure of the first measurement device is different from a structure of the second measurement device.

19. A method of using an electrostatic discharge (ESD) testing structure, the method comprising:

bonding a die to a device structure, wherein bonding the die to the device structure comprises electrically connecting each measurement device of a plurality of measurement devices in the die to a corresponding fuse of a plurality of fuses in the device structure to form a plurality of ESD testing structures;

trimming at least one fuse of the plurality of fuses prior to the bonding of the die to the device structure, wherein trimming the at least one fuse disables a corresponding measurement device of the plurality of measurement devices;

capturing a voltage or a current of an ESD event during bonding the die to the device structure using non-disabled measurement devices of the plurality of measurement devices; and

probing at least one non-disabled measurement device of the plurality of measurement devices of the second set of ESD testing structures.

20. The method of claim 19 , further comprising determining a location of the ESD event on the die based on the captured voltage or the captured current.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 23, 2016
From: CHANG, TZU-HENG; TSENG, JEN-CHOU; SONG, MING-HSIANG
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 039845/0337 →
Continuity (1)
Related Publication 20180088163A1 · Mar 29, 2018
Cited By (2)
US 12,231,114 US 12,293,799