Method of manufacturing semiconductor device
Provided is a method of manufacturing a semiconductor device, including: forming a stacked metal nitride film including a first metal nitride film and a second metal nitride film on a substrate by alternately performing steps (a) and (b) a plurality of times, wherein the step (a) includes alternately supplying: a first metal source containing a first halogen element and a metal element; and a nitrogen-containing source to the substrate a plurality of times to form the first metal nitride film, and the step (b) includes alternately supplying: a second metal source containing a second halogen element different from the first halogen element and the metal element; and the nitrogen-containing source to the substrate a plurality of times to form the second metal nitride film.
1. A method of manufacturing a semiconductor device, comprising: forming a stacked metal nitride film comprising a first metal nitride film and a second metal nitride film on a substrate by alternately performing steps (a) and (b) a plurality of times, wherein the step (a) comprises alternately supplying: a first metal source containing a first halogen element and a metal element; and a nitrogen-containing source to the substrate a plurality of times to form the first metal nitride film, and the step (b) comprises alternately supplying: a second metal source containing a second halogen element different from the first halogen element and the metal element; and the nitrogen-containing source to the substrate a plurality of times to form the second metal nitride film.
2. The method of claim 1 , wherein atomic number of the first halogen element is higher than that of the second halogen element.
3. The method of claim 2 , wherein the step (a) starts first when forming the stacked metal nitride film.
4. The method of claim 1 , wherein atomic number of the first halogen element is higher than that of the second halogen element, and the second halogen element comprises chlorine.
5. The method of claim 1 , wherein the first halogen element comprises iodine.
6. The method of claim 1 , wherein the metal element comprises one selected from a group consisting of titanium, tungsten, tantalum, zirconium, hafnium, ruthenium, cobalt and nickel.
7. The method of claim 6 , wherein the first metal source comprises titanium iodide, and the second metal source comprises titanium chloride.
8. The method of claim 1 , wherein a temperature of the substrate ranges from 350° C. to 400° C. when forming the stacked metal nitride film.
9. The method of claim 1 , wherein a work function of the first metal nitride film is different from a work function of the second metal nitride film.
10. The method of claim 1 , wherein a resistivity of the first metal nitride film is different from a resistivity of the second metal nitride film.