Reduction of Area and Power for Sense Amplifier in Memory
The present invention is directed to a memory subsystem including a plurality of memory banks, each of the memory banks including a plurality of memory cells arranged in rows and columns with word-lines connecting to the memory cells along a row direction and bit-lines connecting to the memory cells along a column direction; a sense amplifier module shared by the plurality of memory banks, the sense amplifier module including a plurality of sense amplifiers for sensing resistance of the memory cells; a plurality of memory buffer modules coupled to the sense amplifier module, each of the memory buffer modules including a plurality of memory buffers for storing data from the sense amplifiers; and an input/output (I/O) interface coupled to the memory buffer modules.
1 . A memory subsystem comprising:
a plurality of memory banks, each of the memory banks including a plurality of memory cells arranged in rows and columns with word-lines connecting to the memory cells along a row direction and bit-lines connecting to the memory cells along a column direction;
a sense amplifier module shared by the plurality of memory banks, the sense amplifier module including a plurality of sense amplifiers for sensing resistance of the memory cells; and
a plurality of memory buffer modules coupled to the sense amplifier module, each of the memory buffer modules including a plurality of memory buffers for storing data from the sense amplifiers.
2 . The memory system of claim 1 further comprising an input/output (I/O) interface coupled to the memory buffer modules.
3 . The memory subsystem of claim 1 , wherein each of the plurality of memory cells includes a magnetic tunnel junction (MTJ) and a selection transistor coupled in series.
4 . The memory subsystem of claim 1 , wherein each of the plurality of memory cells includes a magnetic tunnel junction (MTJ) and a two-terminal selector coupled in series.
5 . The memory subsystem of claim 1 , wherein the memory subsystem is compliant with at least one version of double data rate synchronous dynamic random access memory (DDR SDRAM) specification.
6 . The memory subsystem of claim 1 , wherein number of the columns of the memory cells in each of the memory banks is same as number of the sense amplifiers in the sense amplifier module.
7 . The memory subsystem of claim 1 , wherein number of the bit-lines in in each of the memory banks is same as number of the sense amplifiers in the sense amplifier module.
8 . The memory subsystem of claim 1 , wherein number of the columns of the memory cells in each of the memory banks is twice as many as number of the sense amplifiers in the sense amplifier module.
9 . The memory subsystem of claim 1 , wherein number of the bit-lines in in each of the memory banks is twice as many as number of the sense amplifiers in the sense amplifier module.
10 . The memory subsystem of claim 1 , wherein number of the sense amplifiers in the sense amplifier module is same as number of the memory buffers in each of the memory buffer modules.
11 . The memory subsystem of claim 10 , wherein each of the memory buffers in each of the memory buffer modules is made of a flip-flop or latch.
12 . A memory subsystem comprising:
a plurality of memory banks, each of the memory banks including a plurality of memory cells arranged in rows and columns with word-lines connecting to the memory cells along a row direction and bit-lines connecting to the memory cells along a column direction;
a sense amplifier module shared by the plurality of memory banks, the sense amplifier module including an error correction code (ECC) decoder and a plurality of sense amplifiers for sensing resistance of the memory cells;
a post processor coupled to the sense amplifier module for further processing of decoded data from the sense amplifier module; and
a plurality of memory buffer modules coupled to the post processor, each of the memory buffer modules including a plurality of memory buffers for storing data from the sense amplifiers.
13 . The memory subsystem of claim 12 further comprising another sense amplifier module shared by the plurality of memory blocks, the another sense amplifier module including another error correction code (ECC) decoder and another plurality of sense amplifiers for sensing resistance of the memory cells.
14 . The memory subsystem of claim 12 , wherein the post processor includes a digital signal processor and majority voting functionality.
15 . The memory subsystem of claim 12 , wherein each of the plurality of memory cells includes a magnetic tunnel junction (MTJ) and a selection transistor coupled in series.
16 . The memory subsystem of claim 12 , wherein each of the plurality of memory cells includes a magnetic tunnel junction (MTJ) and a two-terminal selector coupled in series.
17 . The memory subsystem of claim 12 , wherein the memory subsystem is compliant with at least one version of double data rate synchronous dynamic random access memory (DDR SDRAM) specification.
18 . The memory subsystem of claim 12 , wherein number of the sense amplifiers in the sense amplifier module is same as number of the memory buffers in each of the memory buffer modules.
19 . The memory subsystem of claim 12 , wherein number of the columns of the memory cells in each of the memory banks is same as number of the sense amplifiers in the sense amplifier module.
20 . The memory subsystem of claim 12 , wherein number of the bit-lines in each of the memory banks is twice as many as number of the sense amplifiers in the sense amplifier module.