Plasma processing apparatus and operating method of plasma processing apparatus
A plasma processing device performing etching processing to a sample disposed in a processing chamber disposed in a vacuum vessel by using plasma formed in the processing chamber includes a light detector, a component detector, and a determination unit. The light detector detects light intensity of a plurality of wavelengths from the inside of the processing chamber at a plurality of times during the sample processing. The component detector detects, by using a result of a principal component analysis of time-series data, a highly correlated component between the time-series data of a plurality of the wavelengths at a certain time in a plurality of the times obtained from output of the light detector. The determination unit determines an amount or an end point of the etching processing based on a change in light intensity of at least one of a plurality of the wavelengths detected by using the time-series data from which the highly correlated component is removed.
1. An operation method for a plasma processing device performing etching processing by disposing a sample to be processed in a processing chamber disposed in a vacuum vessel and by using plasma generated in the processing chamber, the operation method, comprising:
detecting light intensity of a plurality of wavelengths from the inside of the processing chamber at a plurality of times during the sample processing;
detecting, by using a result of a principal component analysis of time-series data, a most highly in-phase component between the time-series data of the plurality of the wavelengths at a certain time in the plurality of times obtained from the detected light intensity; and
determining an etching depth or an end point of the etching processing based on a change in the detected light intensity of at least one of the plurality of the wavelengths by using a calculated result of the most highly in-phase component being subtracted from the time-series data.
2. The operation method for the plasma processing device according to claim 1 , wherein an interval between the plurality of times is smaller than a time required to change between a maximum value and a minimum value of the light intensity.
3. The operation method for the plasma processing device according to claim 1 , wherein the time-series data of the light intensity of the plurality of the wavelength is obtained from an output of a light detector.
4. The operation method for the plasma processing device according to claim 1 , wherein the most highly in-phase component is generated by synchronizing the time-series data of the light intensity of the plurality of the wavelengths obtained from an output of a light detector.
5. The operation method for the plasma processing device according to claim 1 , wherein the most highly in-phase component is detected based on a probability in which the light intensity of the most highly in-phase component is a random variable that follows a predetermined distribution.