IP Library › Granted Patent US 10,243,344
Granted Patent B2
US 10,243,344 · App. 15/278,179 · Granted Mar 26, 2019

Semiconductor device

Inventor: Satoru Nate (Kyoto, JP)
Assignee: Rohm Co., Ltd.
H02H3/093H02H3/087H02H7/122H02H7/1213H02H9/02H02M1/32H02M3/155H02M7/217
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Quick Facts
Patent No.
US 10,243,344
App. No.
15/278,179
Granted
Mar 26, 2019
Kind
B2
Abstract

A semiconductor device includes an integration of a first external terminal to which a DC input voltage is input, a second external terminal to which a rectifying and smoothing circuit is externally connected, an output transistor connected between the first external terminal and the second external terminal, a control circuit arranged to turn on and off the output transistor so that a desired DC output voltage can be obtained from the rectifying and smoothing circuit, a current detection circuit arranged to generate a sense voltage corresponding to an on-current of the output transistor, and an overcurrent protection circuit arranged to monitor the sense voltage so as to perform an overcurrent protection operation. The overcurrent protection circuit performs a first overcurrent protection operation of a pulse-by-pulse method when detecting that the sense voltage exceeds a first threshold value voltage, and performs a second overcurrent protection operation of a timer latch method when detecting that the sense voltage continues to increase though the first overcurrent protection operation is being performed.

Claims (53)

1. A semiconductor device comprising an integration of:

a first external terminal to which a DC input voltage is input;

a second external terminal to which a rectifying and smoothing circuit is externally connected;

an output transistor connected between the first external terminal and the second external terminal;

a control circuit arranged to turn on and off the output transistor so that a desired DC output voltage can be obtained from the rectifying and smoothing circuit;

a current detection circuit arranged to generate a sense voltage corresponding to an on-current of the output transistor; and

an overcurrent protection circuit arranged to monitor the sense voltage so as to perform an overcurrent protection operation, wherein

the overcurrent protection circuit performs a first overcurrent protection operation of a pulse-by-pulse method when detecting that the sense voltage exceeds a first threshold value voltage, and performs a second overcurrent protection operation of a timer latch method when detecting that the sense voltage continues to increase though the first overcurrent protection operation is being performed, wherein

the overcurrent protection circuit includes a first comparator arranged to compare the sense voltage with the first threshold value voltage so as to generate a first comparison signal, and

the control circuit forcibly turns off the output transistor until an on timing of a next period so that the first overcurrent protection operation is performed according to the first comparison signal, wherein the overcurrent protection circuit includes

a second comparator arranged to compare the sense voltage with a second threshold value voltage higher than the first threshold value voltage so as to generate a second comparison signal,

a counter arranged to generate a one-shot signal when a pulse of the second comparison signal is detected continuously for a plurality of periods, and

a timer arranged to generate a timer signal for a predetermined time by a trigger of the one-shot signal, wherein

the control circuit forcibly turns off the output transistor for the predetermined time so that the second overcurrent protection operation is performed according to the timer signal.

2. The semiconductor device according to claim 1 , further comprising an integrated filter circuit connected between the current detection circuit and the overcurrent protection circuit.

3. The semiconductor device according to claim 1 , wherein the current detection circuit generates the sense voltage from the on-current using one of a wiring resistance of a current path in which the on-current flows, an on-resistance of the output transistor, and an on-resistance of a transistor for monitoring current connected in parallel to the output transistor.

4. A DC/DC converter comprising:

a semiconductor device according to claim 1 ; and

a rectifying and smoothing circuit externally connected to the semiconductor device so as to generate a desired DC output voltage.

5. The DC/DC converter according to claim 4 , further comprising a power supply voltage generation circuit externally connected to the semiconductor device so as to generate a power supply voltage of the semiconductor device from the DC output voltage.

6. A power supply device comprising:

an AC/DC converter arranged to generate a DC input voltage from an AC input voltage; and

a DC/DC converter according to claim 4 arranged to generate a desired DC output voltage from the DC input voltage.

7. An electronic apparatus comprising:

a power supply device according to claim 6 arranged to generate a desired DC output voltage from a AC input voltage; and

a load arranged to receive supply of the DC output voltage so as to operate.

8. A semiconductor device comprising an integration of:

a first external terminal to which a DC input voltage is input;

a second external terminal to which a rectifying and smoothing circuit is externally connected;

an output transistor connected between the first external terminal and the second external terminal;

a control circuit arranged to turn on and off the output transistor so that a desired DC output voltage can be obtained from the rectifying and smoothing circuit;

a current detection circuit arranged to generate a sense voltage corresponding to an on-current of the output transistor; and

an overcurrent protection circuit arranged to monitor the sense voltage so as to perform an overcurrent protection operation, wherein

the overcurrent protection circuit performs a first overcurrent protection operation of a pulse-by-pulse method when detecting that the sense voltage exceeds a first threshold value voltage, and performs a second overcurrent protection operation of a timer latch method when detecting that the sense voltage continues to increase though the first overcurrent protection operation is being performed, wherein

the overcurrent protection circuit includes a first comparator arranged to compare the sense voltage with the first threshold value voltage so as to generate a first comparison signal, and

the control circuit forcibly turns off the output transistor until an on timing of a next period so that the first overcurrent protection operation is performed according to the first comparison signal, wherein the overcurrent protection circuit includes

a second comparator arranged to compare the sense voltage with a second threshold value voltage higher than the first threshold value voltage so as to generate a second comparison signal,

a third comparator arranged to compare the sense voltage with a third threshold value voltage higher than the first threshold value voltage and lower than the second threshold value voltage, so as to generate a third comparison signal,

a logic unit arranged to generate a one-shot signal when a pulse of the third comparison signal is detected and then in the next period a pulse of the second comparison signal is detected, and

a timer arranged to generate a timer signal for a predetermined time by a trigger of the one-shot signal, wherein

the control circuit forcibly turns off the output transistor for the predetermined time so that the second overcurrent protection operation is performed according to the timer signal.

9. The semiconductor device according to claim 8 , further comprising an integrated filter circuit connected between the current detection circuit and the overcurrent protection circuit.

10. The semiconductor device according to claim 8 , wherein the current detection circuit generates the sense voltage from the on-current using one of a wiring resistance of a current path in which the on-current flows, an on-resistance of the output transistor, and an on-resistance of a transistor for monitoring current connected in parallel to the output transistor.

11. A DC/DC converter comprising:

a semiconductor device according to claim 8 ; and

a rectifying and smoothing circuit externally connected to the semiconductor device so as to generate a desired DC output voltage.

12. The DC/DC converter according to claim 11 , further comprising a power supply voltage generation circuit externally connected to the semiconductor device so as to generate a power supply voltage of the semiconductor device from the DC output voltage.

13. A power supply device comprising:

an AC/DC converter arranged to generate a DC input voltage from an AC input voltage; and

a DC/DC converter according to claim 11 arranged to generate a desired DC output voltage from the DC input voltage.

14. An electronic apparatus comprising:

a power supply device according to claim 13 arranged to generate a desired DC output voltage from a AC input voltage; and

a load arranged to receive supply of the DC output voltage so as to operate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 28, 2016
From: NATE, SATORU
To: ROHM CO., LTD.
Reel/Frame 039877/0398 →
Priority Claims (1)
JP 2015-190702 · Sep 29, 2015 · national
Continuity (1)
Related Publication 20170093145A1 · Mar 30, 2017
Cited By (2)
US 12,609,522 US 12,651,901