Heterogeneous metallization using solid diffusion removal of metal interconnects
A method for forming trenches of an interconnect network in a substrate. The method includes forming a first trench in the substrate, which has a first width. The method also includes forming a second trench in the substrate, which has a second width that is greater than the first width. The method also includes depositing a metal layer into the trenches, applying a dielectric over the metal, and diffusing metal atoms from the trenches to the dielectric. The dielectric absorbs a majority of the metal atoms from the first trench while simultaneously absorbing only a minority of metal atoms from the second trench.
1. A method for forming trenches of an interconnect network in a substrate, the method comprising:
forming a first trench of the trenches in the substrate, wherein the first trench comprises a first width dimension;
forming a second trench of the trenches in the substrate, wherein the second trench comprises a second width dimension that is greater than the first width dimension;
depositing a first metal layer into the first trench and the second trench;
applying a dielectric layer over the first metal layer; and
diffusing first metal atoms of the first metal layer from each of the first trench and the second trench to the dielectric layer, wherein the dielectric layer absorbs the first metal atoms from the first trench leaving the first trench devoid of significantly all of the first metal atoms while simultaneously absorbing only a minority of the first metal atoms from the second trench.
2. The method of claim 1 , wherein the first width dimension is less than 30 nm.
3. The method of claim 1 , wherein the second width dimension is greater than 30 nm.
4. The method of claim 1 , wherein the first trench and the second trench are formed at the same layer or level.
5. The method of claim 1 , further comprising:
removing the dielectric layer, including the diffused first metal atoms contained within the dielectric layer;
depositing a second metal layer into the first trench and the second trench; and
applying a protective layer over the first trench and the second trench.
6. The method of claim 1 , wherein the first metal layer comprises: copper or a copper alloy; or a metal including silver, gold, aluminum, rhodium, iridium, tungsten, molybdenum, cobalt, nickel, or ruthenium; or a metal silicide including tungsten silicide, titanium silicide, nickel silicide, or cobalt silicide.
7. The method of claim 5 , wherein the second metal layer comprises: a metal including silver, gold, aluminum, rhodium, iridium, tungsten, molybdenum, cobalt, nickel, or ruthenium; or a metal silicide including tungsten silicide, titanium silicide, nickel silicide, or cobalt silicide.
8. The method of claim 1 , further comprising annealing the dielectric layer after applying the dielectric layer to accelerate the diffusion process and to increase efficiency of diffusing the first metal atoms from the first trench and the second trench to the dielectric layer.
9. The method of claim 1 , wherein the dielectric layer comprises an oxide or amorphous carbon.
10. The method of claim 1 , further comprising planarizing a surface of the substrate after depositing a second metal layer to remove any second metal overburden.