Method and apparatus for avoiding bus contention after initialization failure
In one embodiment, an apparatus comprises a storage device comprising a NAND flash memory device comprising a plurality of NAND flash memory units. The storage device is to determine that the NAND flash memory device did not pass an initialization procedure; identify a first addressing scheme that is implemented by one or more of the NAND flash memory units that initialized properly; and after the initialization procedure, instruct each of the plurality of NAND flash memory units to implement the first addressing scheme.
1. An apparatus comprising:
a storage device comprising a NAND flash memory device comprising a plurality of NAND flash memory units, the storage device to:
determine that the NAND flash memory device did not pass an initialization procedure;
identify a first addressing scheme that is implemented by one or more of the NAND flash memory units that initialized properly; and
after the initialization procedure, instruct each of the plurality of NAND flash memory units to implement the first addressing scheme;
wherein a first NAND flash memory unit of the plurality of NAND flash memory units is to implement, prior to being instructed to implement the first addressing scheme after the initialization procedure, a second addressing scheme when the first NAND flash memory unit fails to initialize properly.
2. The apparatus of claim 1 , wherein the NAND flash memory units are each coupled to the same enable signal.
3. The apparatus of claim 1 , wherein a first NAND flash memory unit of the plurality of NAND flash memory units is to implement the first addressing scheme in response to initializing properly.
4. The apparatus of claim 1 , wherein at least one bit that is used to specify a logical unit number address of one of the plurality of NAND flash memory units is specified differently in the first addressing scheme and the second addressing scheme.
5. The apparatus of claim 1 , wherein the first addressing scheme specifies address bits over six cycles and the second addressing scheme specifies address bits over five cycles.
6. The apparatus of claim 1 , wherein the first addressing scheme is a multi-level cell (MLC) addressing scheme and the second addressing scheme is a single-level cell (SLC) addressing scheme.
7. The apparatus of claim 1 , wherein the NAND flash memory device is embodied in a semiconductor package and each of the plurality of NAND flash memory units is embodied within a respective die of the semiconductor package.
8. The apparatus of claim 1 , wherein a storage device controller of the storage device is to instruct each of the plurality of NAND flash memory units to implement the first addressing scheme in response to determining that the NAND flash memory device did not initialize properly.
9. The apparatus of claim 1 , the storage device further to instruct the plurality of NAND flash memory units to implement the first addressing scheme during the initialization procedure.
10. The apparatus of claim 1 , the storage device further to communicate with each of the plurality of NAND flash memory units after the NAND flash memory units have been instructed to implement the first addressing scheme to determine one or more of the NAND flash memory units did not initialize properly.
11. The apparatus of claim 10 , the storage device further to take offline the one or more of the NAND flash memory units that did not initialize properly.
12. A method comprising:
determining that a NAND flash memory device did not pass an initialization procedure, the NAND flash memory device comprising a plurality of NAND flash memory units;
identifying a first addressing scheme that is implemented by one or more of the NAND flash memory units that initialized properly; and
after the initialization procedure, instructing each of the plurality of NAND flash memory units to implement the first addressing scheme;
wherein a first NAND flash memory unit of the plurality of NAND flash memory units is to implement, prior to being instructed to implement the first addressing scheme after the initialization procedure, a second addressing scheme when the first NAND flash memory unit fails to initialize properly.
13. The method of claim 12 , wherein the NAND flash memory units are each coupled to the same enable signal.
14. The method of claim 12 , wherein at least one bit that is used to specify a logical unit number address of one of the plurality of NAND flash memory units is specified differently in the first addressing scheme and the second addressing scheme.
15. A system comprising:
a processor to send a write request to a storage device; and
a storage device comprising:
a NAND flash memory device comprising a plurality of NAND flash memory units; and
a storage device controller to:
determine that the NAND flash memory device did not pass an initialization procedure;
identify a first addressing scheme that is implemented by one or more of the NAND flash memory units that initialized properly; and
after the initialization procedure, instruct each of the plurality of NAND flash memory units to implement the first addressing scheme; wherein a first NAND flash memory unit of the plurality of NAND flash memory units is to implement, prior to being instructed to implement the first addressing scheme after the initialization procedure, a second addressing scheme when the first NAND flash memory unit fails to initialize properly.
16. The system of claim 15 , wherein at least one bit that is used to specify a logical unit number address of one of the plurality of NAND flash memory units is specified differently in the first addressing scheme and the second addressing scheme.
17. The system of claim 15 , further comprising one or more of: a battery communicatively coupled to the processor, a display communicatively coupled to the processor, or a network interface communicatively coupled to the processor.