Electrostatic discharge protection device

1. An electrostatic discharge protection device comprising:

a semiconductor substrate;

a device area located on the substrate;

an array of coextensive, laterally spaced fingers located within the device area, each finger comprising an elongate source and an elongate drain separated by an elongate gate, wherein the fingers are electrically connected in parallel for conducting an electrostatic discharge current during an electrostatic discharge event; and

a plurality of body contact regions, wherein at least some of the body contact regions comprise a doped island located at a surface of the substrate with one or more individual electrical contacts located on the doped island,

wherein the body contact regions have a layout that is graded so that a greater number of the body contact regions, larger body contact regions, or both are located towards a periphery of the device area than towards a central part of the device area and no body contact regions are located within the central part of the device area, and wherein the layout of the body contact regions is configured to trigger the electrostatic discharge protection device within the central part of the device area,

wherein the body contact regions are arranged in rows that coextend with the fingers in the device area, and

wherein some of the rows of the body contact regions are located towards the central part of the device area and extend across the central part of the device area, and wherein the middle of the rows extending across the central part of the device area do not include any of the body contact regions.

2. The electrostatic discharge protection device of claim 1 , comprising a greater number of the doped islands located towards the periphery of the device area than are located towards the central part of the device area.

3. The electrostatic discharge protection device of claim 1 , wherein the doped islands include the larger doped islands located towards the periphery of the device area than smaller doped islands located towards the central part of the device area.

4. The electrostatic discharge protection device of claim 3 , wherein the body contact regions of the device comprising the larger doped islands include more individual electrical contacts than the body contact regions of the device comprising the smaller doped islands.

5. The electrostatic discharge protection device of claim 1 , wherein at least some of the rows of the body contact regions are each located adjacent an elongate source of a finger of the device.

6. The electrostatic discharge protection device of claim 1 , wherein each row of the body contact regions has a middle and two ends, and wherein at least some of the rows of the body contact regions include a fewer number of the body contact regions, smaller body contact regions, or both located toward their middle than at their two ends.

7. The electrostatic discharge protection device of claim 1 , wherein rows of the body contact regions located towards the central part of the device area include a fewer number of rows of the body contact regions, rows of smaller body contact regions, or both, than rows of the body contact regions located towards the periphery of the device area.

8. The electrostatic discharge protection device of claim 1 , wherein the device area is rectangular.

9. The electrostatic discharge protection device of claim 1 , wherein the device comprises a grounded gate NMOS transistor or an extended drain NMOS transistor.

10. An electrostatic discharge protection circuit comprising the electrostatic discharge protection device of claim 1 .

11. An integrated circuit comprising the electrostatic discharge protection device of claim 1 .