Reflective photomask, method of fabricating the same, and exposure apparatus using the reflective photomask

1. A reflective photomask comprising:

a substrate;

a reflective layer formed on the substrate, wherein the reflective layer includes at least two recessed portions having different widths from each other along a direction parallel to an upper surface of the substrate; and

an absorbing layer formed in each of the at least two recessed portions, wherein the absorbing layer includes at least one absorbent and at least one polymer, and

wherein the polymer includes a compound having a structure in which a hydrogen atom of a phenolic hydroxyl group is replaced by a group having an arsenic acid-decomposable polycyclic type alicyclic hydrocarbon structure.

2. The reflective photomask of claim 1 , wherein the at least one absorbent includes metallic particles.

3. The reflective photomask of claim 2 , wherein the metallic particles include at least one selected from hafnium (Hf), tantalum (Ta), tungsten (W), aluminum (Al), and chromium (Cr).

4. The reflective photomask of claim 1 , wherein the at least one absorbent includes a material which has an extinction coefficient (k) of about 0.02 or more among optical constants related to extreme ultraviolet light.

5. The reflective photomask of claim 1 , wherein an upper surface of the absorbing layer formed in each of the at least two recessed portions is aligned with an upper level of each of the at least two recessed portions along the direction parallel to the upper surface of the substrate, and wherein a capping layer is formed on the reflective layer and on the absorbing layer.

6. The reflective photomask of claim 5 , wherein the capping layer includes at least one selected from silicon (Si), molybdenum (Mo), ruthenium (Ru), and zirconium (Zr).

7. The reflective photomask of claim 1 , further comprising a hard mask layer disposed on the reflective layer.

8. The reflective photomask of claim 7 , wherein the hard mask layer includes ruthenium (Ru) or ruthenium silicon (RuSi).

9. The reflective photomask of claim 1 , wherein the absorbing layer includes a surface which is thermally cured and wet etched.

10. An exposure apparatus, comprising:

an extreme ultraviolet (EUV) light generating device configured to generate and emit EUV light;

a reflective photomask, wherein the reflective photomask includes a substrate, a reflective layer comprising a plurality of recessed portions formed on the substrate, wherein the recessed portions of the plurality of recessed portions have different widths from each other along a direction parallel to an upper surface of the substrate, and an absorbing layer formed in each of the recessed portions of the plurality of recessed portions, wherein the absorbing layer includes an absorbent and a polymer;

an illumination optical system configured to direct the EUV light emitted from the EUV light generating device onto the reflective photomask; and

a projection optical system configured to direct the EUV light reflected from the reflective photomask onto a target object,

wherein the polymer includes a compound having a structure in which a hydrogen atom of a phenolic hydroxyl group is replaced by a group having an arsenic acid-decomposable polycyclic type alicyclic hydrocarbon structure.

11. The exposure apparatus of claim 10 , wherein the absorbent includes a material which has an extinction coefficient (k) of about 0.02 or more among optical constants related to the EUV light.

12. The exposure apparatus of claim 10 , wherein the reflective photomask further includes a capping layer disposed on the reflective layer and on the absorbing layer.

13. The exposure apparatus of claim 10 , wherein the reflective photomask further includes a hard mask layer disposed on the reflective layer.

14. A reflective photomask comprising:

a substrate;

a reflective layer comprising a plurality of recessed portions disposed on the substrate, wherein the reflective layer comprises a plurality of layers, and wherein an uppermost layer of the plurality of layers of the reflective layer is a hard mask layer; and

an absorbing layer conformally formed in each of the recessed portions of the plurality of recessed portions, wherein a top surface of the absorbing layer and a top surface of the hard mask layer form a substantially continuous flat surface,

wherein the absorbing layer includes an absorbent and a polymer, and

wherein the polymer includes a compound having a structure in which a hydrogen atom of a phenolic hydroxyl group is replaced by a group having an arsenic acid-decomposable polycyclic type alicyclic hydrocarbon structure.

15. The reflective photomask of claim 14 , further comprising a capping layer disposed on the substantially continuous flat surface.

16. The reflective photomask of claim 14 , wherein the absorbent includes a material which has an extinction coefficient (k) of about 0.02 or more among optical constants related to extreme ultraviolet (EUV) light.