IP Library Granted Patent US 10,541,374
Granted Patent B2
US 10,541,374 · App. 15/290,575 · Granted Jan 21, 2020

Electronically pure single chirality semiconducting single-walled carbon nanotube for large scale electronic devices

Inventor: Huaping Li (Los Angeles, CA)
Assignee: Carbon Nanotube Technologies, LLC
H01L51/0512C09D11/52H01L51/0004H01L51/0021H01L51/0048H01L51/0558H01L51/0017H01L51/0541H01L51/0545
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Quick Facts
Patent No.
US 10,541,374
App. No.
15/290,575
Granted
Jan 21, 2020
Kind
B2
Abstract

An electronically pure carbon nanotube ink, includes a population of semiconducting carbon nanotubes suspended in a liquid, the ink being essentially free of metallic impurities and organic material, and characterized in that when incorporated as a carbon nanotube network in a metal/carbon nanotube network/metal double diode, a nonlinear current-bias curve is obtained on application of a potential from 0.01 V to 100 V. The ink can be used to prepare air-stable n-type thin film transistors having performances similar to current thin film transistors used in flat panel displays amorphous silicon devices and high performance p-type thin film transistors with high-κ dielectrics.

Claims (33)

1. An electronically pure carbon nanotube ink, comprising:

a population of single-walled semiconducting carbon nanotubes suspended in a liquid, the ink being essentially free of metallic impurities and wherein the ink is characterized as being electronically pure when incorporated as a carbon nanotube network in a metal/carbon nanotube network/metal double diode, by obtaining a nonlinear current-bias curve through the application of a potential from 0.01 V to 5 V across the semiconducting carbon nanotube network diode.

2. The electronically pure carbon nanotube ink of claim 1 , wherein 99.9% or more of the carbon nanotubes are semiconducting.

3. The electronically pure carbon nanotube ink of claim 1 , wherein 99.99% or more of the carbon nanotubes are semiconducting.

4. The electronically pure carbon nanotube ink of claim 1 , wherein the carbon nanotubes comprise one or more chiralities selected from (6,1), (5,3), (7,0), (6,2), (5,4), (8,0), (7,2), (8,1), (6,4), (7,3), (6,5), (9,1), (8,3), (10,0), (9,2), (7,5), (8,4), (11,0), (12, 2), (7,6), (9,4), (11,1), (10,3), (8,6), (9,5), (12,1), (11,3), (8,7), (13,0), (12,2), (10,5), (11,4), (9,7), (10,6), (13,2), (12,4), (14,1), (9,8), (13,3), (18,4), (20,2).

5. The electronically pure carbon nanotube ink of claim 1 , wherein the semiconducting carbon nanotubes are of a single chirality.

6. The electronically pure carbon nanotube ink of claim 4 , wherein the carbon nanotubes are (6,5) single-walled carbon nanotube.

7. The electronically pure carbon nanotube ink of claim 1 , wherein the semiconducting carbon nanotubes are a single tube diameter of 0.7 nm and length from 500 nm to 10 μm.

8. The electronically pure carbon nanotube ink of claim 1 , wherein the liquid comprises deionized water.

9. The electronically pure carbon nanotube ink of claim 1 , wherein the ink comprises water soluble surfactants.

10. The electronically pure carbon nanotube ink of claim 9 , wherein the water soluble surfactants are selected from the group of are sodium dodecyl sulfate, sodium dodecylbenzene sulfate, sodium cholate, and sodium deoxycholate.

11. An electronically pure carbon nanotube thin film, comprising:

a population of single-walled semiconducting carbon nanotubes essentially free of metallic impurities and organic material, and wherein the film is characterized as being electronically pure when incorporated as a carbon nanotube network in a metal/carbon nanotube network/metal double diode, by obtaining a nonlinear current-bias curve through the application of a potential from 0.01 V to 5 V across the semiconducting carbon nanotube network diode.

12. The electronically pure carbon nanotube thin film of claim 11 , wherein 99.9% or more of the carbon nanotubes are semiconducting.

13. The electronically pure carbon nanotube thin film of claim 11 , wherein 99.99% or more of the carbon nanotubes are semiconducting.

14. The electronically pure carbon nanotube thin film of claim 11 , wherein the carbon nanotubes comprise one or more chiralities selected from (6,1), (5,3), (7,0), (6,2), (5,4), (8,0), (7,2), (8,1), (6,4), (7,3), (6,5), (9,1), (8,3), (10,0), (9,2), (7,5), (8,4), (11,0), (12, 2), (7,6), (9,4), (11,1), (10,3), (8,6), (9,5), (12,1), (11,3), (8,7), (13,0), (12,2), (10,5), (11,4), (9,7), (10,6), (13,2), (12,4), (14,1), (9,8), (13,3), (18,4), (20,2).

15. The electronically pure carbon nanotube thin film of claim 14 , wherein the semiconducting carbon nanotubes are a single chirality.

16. The electronically pure carbon nanotube thin film of claim 14 , wherein the carbon nanotubes are (6,5) single-walled carbon nanotube.

17. The electronically pure carbon nanotube thin film of claim 11 , wherein the semiconducting carbon nanotubes are a single tube diameter of 0.7 nm and length from 500 nm to 5 μm.

18. The electronically pure carbon nanotube thin film of claim 11 , wherein the carbon nanotube density is in a range from 1-1000 nanotubes per μm 2 .

19. A method of identifying an electronically pure carbon nanotube ink, comprising:

providing a nanotube ink of interest;

preparing a metal electrode/carbon nanotube network/metal electrode double diode, using the carbon nanotube ink of interest;

applying a voltage from 0.01 V to 5 V across the carbon nanotube network diode; and

generating a current-bias curve, wherein a non-linear curve generated by the carbon nanotube network diode is an indication of an electronically pure semiconducting carbon nanotube ink.

20. The method of claim 19 , wherein the nonlinear curve exhibits a power-law behavior.

21. The method of claim 19 , wherein a curve is considered non-linear when the correlation coefficient in a linear regression analysis is less than 0.90.

22. The method of claim 19 , wherein a curve is considered non-linear when the correlation coefficient in a linear regression analysis is less than 0.80.

23. The method of claim 19 , wherein the electrodes are prepared from metals selected from Au, Cr, Ag, Ti, Cu, Al, Mo, Pd, Pt, Sc, and/or their combination.

24. The method of claim 19 , wherein the electrodes define a channel length in the range of 5 nm to >1 mm and a channel width in the range of 5 nm to >1 mm.

25. A method of making an electronically pure carbon nanotube thin film comprising:

treating a substrate by ozone, and coating with poly(I-Lysine); and

applying the electronically pure semiconducting carbon nanotube ink of claim 1 on the poly(I-Lysine) treated substrate.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 16, 2020
From: CARBON NANOTUBE TECHNOLOGIES, LLC
To: ATOM H2O, LLC
Reel/Frame 054381/0945 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 29, 2018
From: ATOM NANOELECTRONICS, INC.
To: CARBON NANOTUBE TECHNOLOGIES, LLC
Reel/Frame 046241/0755 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 4, 2017
From: LI, HUAPING
To: ATOM NANOELECTRONICS, INC.
Reel/Frame 040843/0880 →
Continuity (2)
Provisional Application 62274634 · Jan 4, 2016
Related Publication 20170194581A1 · Jul 6, 2017
Cited By (2)
US 12,553,329 US 12,652,947