Back-contact solar cell and method for manufacturing the same
A method for manufacturing a back-contact solar cell, comprising the steps of: (i) preparing a semiconductor substrate comprising an n-layer and a p-layer at the back side of the semiconductor substrate; (ii) applying a conductive paste on both the n-layer and the p-layer, wherein the conductive paste comprises a silver (Ag) powder, a palladium (Pd) powder, an additional metal powder selected from the group consisting of molybdenum (Mo), boron (B) and a mixture thereof, a glass frit, and an organic medium; and (iii) firing the applied conductive paste.
1. A method for manufacturing a back-contact solar cell, comprising the steps of:
(i) preparing a semiconductor substrate comprising an n-layer and a p-layer at the back side of the semiconductor substrate;
(ii) applying a conductive paste on both the n-layer and the p-layer, wherein the conductive paste comprises a silver (Ag) powder, a palladium (Pd) powder, an additional metal powder selected from the group consisting of molybdenum (Mo), boron (B) and a mixture thereof, a glass frit, and an organic medium; and
(iii) firing the applied conductive paste.
2. The method of claim 1 , wherein the semiconductor substrate is a crystal silicon wafer.
3. The method of claim 1 , wherein the particle diameter of the silver powder is 0.1 to 10 μm.
4. The method of claim 1 , wherein the particle diameter of the palladium powder is 0.1 to 10 μm.
5. The method of claim 1 , wherein the particle diameter of the additional metal powder is 0.1 to 10 μm.
6. The method of claim 1 , wherein the silver powder is 11 to 80 weight percent (wt. %), the palladium powder is 0.1 to 20 wt. %, the additional metal powder is 0.1 to 10 wt. %, the glass frit is 1 to 40 wt. %, and the organic medium is 10 to 60 wt. % based on the weight of the conductive paste.
7. The method of claim 1 , wherein the silver powder is 20 to 94 weight percent (wt. %), the palladium powder is 0.7 to 30 wt. %, the additional metal powder is 0.8 to 15 wt. %, the glass frit is 4 to 75 wt. % based on the weight of solid in the conductive paste.
8. The method of claim 1 , wherein the silver powder is 100 parts by weight, the palladium powder is 0.5 to 100 parts by weight, the additional metal powder is 0.5 to 90 parts by weight, and the glass frit is 6 to 300 parts by weight.
9. The method of claim 1 , wherein the firing temperature is at 450 to 950° C.
10. A back contact solar cell comprising an electrode, wherein the electrode comprises silver, palladium and an additional metal selected from the group consisting of molybdenum (Mo), boron (B) and a mixture thereof, and a glass.