IP Library › Granted Patent US 9,977,604
Granted Patent B2
US 9,977,604 · App. 15/291,795 · Granted May 22, 2018

Memory system

Inventors: Min-Chang Kim (Gyeonggi-do, KR); Chang-Hyun Kim (Gyeonggi-do, KR); Do-Yun Lee (Gyeonggi-do, KR); Jae-Jin Lee (Gyeonggi-do, KR); Hoe-Kwon Jung (Gyeonggi-do, KR)
Assignee: SK Hynix Inc.
G06F3/0611G06F3/0622G06F3/0626G06F3/0659G06F3/0685G06F3/0688G06F12/0246G06F2212/60G06F2212/7202G06F2212/7203
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Quick Facts
Patent No.
US 9,977,604
App. No.
15/291,795
Granted
May 22, 2018
Kind
B2
Abstract

A memory system includes: a first memory device including a first memory and a first memory controller suitable for controlling the first memory to store data; a second memory device including a second memory and a second memory controller suitable for controlling the second memory to store data; and a processor suitable for executing an operating system (OS) and an application, and accessing data storage memory through the first and second memory devices.

Claims (41)

1. A memory system comprising:

a first memory device including a first memory and a first memory controller suitable for controlling the first memory to store data;

a second memory device including a second memory and a second memory controller suitable for controlling the second memory to store data; and

a processor suitable for executing an operating system (OS) and an application to access a data storage memory via the first and second memory devices,

wherein the first and second memories are separated from the processor,

wherein the second memory controller transfers a signal between the processor and the second memory device based on at least one of values of a handshaking information field included in the signal,

wherein the first memory includes a high-capacity memory, which has a lower latency than the second memory and operates as a cache memory for the second memory, and a high-speed memory, which has a lower latency than the high-capacity memory and operates as a cache memory for the high-capacity memory, and

wherein the first memory controller includes a high-capacity memory cache controller suitable for controlling the high-capacity memory to store data, and a high-speed memory cache controller suitable for controlling the high-speed memory to store data.

2. The memory system of claim 1 , wherein the second memory controller includes:

handshaking interface suitable for transferring the signal between the second memory device and the processor; and

a register suitable for temporarily storing data read out from the second memory.

3. The memory system of claim 1 , wherein the at least one of values of the handshaking information field indicates the signal as one of a data request signal from the processor to the second memory, a data ready signal from the second memory to the processor and a session start signal from the processor to the second memory.

4. The memory system of claim 3 , wherein the data request signal includes a command and an address for the second memory device.

5. The memory system of claim 3 ,

wherein the second memory controller includes a storage unit, and

wherein the second memory controller reads data from the second memory and temporarily stores the read data in the storage unit in response to the data request signal.

6. The memory system of claim 5 , wherein the second memory controller provides the data ready signal to the processor when the second memory controller temporarily stores the read data in the storage unit in response to the data request signal.

7. The memory system of claim 6 , wherein the processor provides the session start signal to receive the read data temporarily stored in the storage unit in response to the data ready signal.

8. The memory system of claim 1 , wherein the first memory device is a volatile memory device.

9. The memory system of claim 1 , wherein the second memory device is a nonvolatile memory device.

10. The memory system of claim 9 , wherein the nonvolatile memory device is a nonvolatile random access memory device.

11. A memory system comprising:

a first memory device including a first memory and a first memory controller suitable for controlling the first memory to store data;

a second memory device including a second memory and a second memory controller suitable for controlling the second memory to store data; and

a processor suitable for accessing the first and second memories,

wherein the second memory controller transfers a signal between the processor and the second memory device based on at least one of values of a handshaking information field included in the signal,

wherein the first memory includes a high-capacity memory, which has a lower latency than the second memory and operates as a cache memory for the second memory, and a high-speed memory, which has a lower latency than the high-capacity memory and operates as a cache memory for the high-capacity memory, and

wherein the first memory controller includes a high-capacity memory cache controller suitable for controlling the high-capacity memory to store data, and a high-speed memory cache controller suitable for controlling the high-speed memory to store data.

12. The memory system of claim 11 , wherein the second memory controller includes:

a handshaking interface suitable for transferring the signal between the second memory device and the processor; and

a register suitable for temporarily store data read out from the second memory.

13. The memory system of claim 11 , wherein the at least one of values of the handshaking information field indicates the signal as one of a data request signal from the processor to the second memory, a data ready signal from the second memory to the processor and a session start signal from the processor to the second memory.

14. The memory system of claim 13 , wherein the data request signal includes a command and an address for the second memory device.

15. The memory system of claim 13 ,

wherein the second memory controller includes a storage unit, and

wherein the second memory controller reads data from the second memory and temporarily stores the read data in the storage unit in response to the data request signal.

16. The memory system of claim 15 , wherein the second memory controller provides the data ready signal to the processor when the second memory controller temporarily stores the read data in the storage unit in response to the data request signal.

17. The memory system of claim 16 , wherein the processor provides the session start signal to receive the read data temporarily stored in the storage unit in response to the data ready signal.

18. The memory system of claim 11 , wherein the first memory device is a volatile memory device.

19. The memory system of claim 11 , wherein the second memory device is a nonvolatile memory device.

20. The memory system of claim 19 , wherein the nonvolatile memory device is a nonvolatile random access memory device.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 12, 2016
From: KIM, MIN-CHANG; KIM, CHANG-HYUN; LEE, DO-YUN; LEE, JAE-JIN; JUNG, HOE-KWON
To: SK HYNIX INC.
Reel/Frame 039999/0824 →
Continuity (2)
Provisional Application 62242711 · Oct 16, 2015
Related Publication 20170109062A1 · Apr 20, 2017