Semiconductor chip package comprising laterally extending connectors
A semiconductor chip package is disclosed. The package includes a carrier, a plurality of semiconductor chips disposed on the carrier, a first encapsulation layer disposed above the semiconductor chips. A metallization layer is disposed above the first encapsulation layer, the metallization layer including a plurality of first metallic areas forming electrical connections between selected ones of the semiconductor chips. A second encapsulation layer is disposed above the solder resist layer. A plurality of external connectors are provided, each one of the external connectors being connected with one of the first metallic areas and extending outwardly through a surface of the second encapsulation layer.
1. A semiconductor chip package, comprising:
a carrier;
a plurality of semiconductor chips, each semiconductor chip having a first major surface disposed on the carrier and an opposing second major surface;
a first encapsulation layer disposed above the plurality of semiconductor chips and having a first major surface parallel to the first major surfaces of the plurality of semiconductor chips;
a metallization layer disposed directly on the first major surface of the first encapsulation layer above the plurality of semiconductor chips, the metallization layer comprising a plurality of first metallic areas forming electrical connections between selected ones of the plurality of semiconductor chips;
a second encapsulation layer disposed above the metallization layer; and
a plurality of external connectors, each one of the external connectors being connected with one of the first metallic areas and extending outwardly through a side surface of the second encapsulation layer.
2. The semiconductor chip package according to claim 1 , wherein
the carrier comprises a first main face, a second main face opposite to the first main face, and side faces connecting the first and second main faces, and wherein
the first encapsulation layer is disposed on the first and second main faces and the side faces of the carrier.
3. The semiconductor chip package according to claim 2 , wherein
a solder resist layer disposed on the metallization layer; and
the second encapsulation layer is disposed on a main face of the solder resist layer and on side faces of the solder resist layer and side faces of the first encapsulation layer.
4. The semiconductor chip package according to claim 1 , wherein
each one of the external connectors extend outwardly through a side face of the second encapsulation layer.
5. The semiconductor chip package according to claim 4 , wherein
the external connectors extend outwardly through two opposing side faces of the second encapsulation layer.
6. The semiconductor chip package according to claim 1 , wherein
the external connectors are part of a leadframe.
7. The semiconductor chip package according to claim 1 , further comprising:
electronic devices formed above the first metallic areas and connected to selected ones of the first metallic areas.
8. The semiconductor chip package according to claim 7 , wherein
the electronic devices are selected from the group of passive devices, active devices, resistors, shunt resistors, NTC resistors, inductors, capacitors, sensors, current sensors, drivers, and processors.
9. The semiconductor chip package according to claim 1 , wherein
the metallization layer comprises second metallic areas connected by via connections to an upper main face of the carrier.
10. The semiconductor chip package according to claim 1 , wherein
the external connectors are connected to selected ones of the first metallic areas by bond wires, respectively.
11. The semiconductor chip package according to claim 1 , wherein
at least selected ones of the first metallic areas are formed in such a way that they comprise bondable or solderable upper surfaces.
12. A semiconductor chip package, comprising:
a carrier;
a plurality of semiconductor chips disposed on the carrier;
a first insulation layer disposed above the plurality of semiconductor chips and having a first major surface parallel to major surfaces of the plurality of semiconductor chips;
a metallization layer disposed directly on the first major surface of the first insulation layer above the plurality of semiconductor chips, the metallization layer comprising a plurality of first metallic areas forming electrical connections between selected ones of the plurality of semiconductor chips;
a second insulation layer disposed above the metallization layer; and
a plurality of external connectors, each one of the external connectors being connected with one of the first metallic areas and extending outwardly through a side surface of the second insulation layer.
13. The semiconductor chip package according to claim 12 , wherein
the first insulation layer comprises via connections formed therein, the via connections connecting selected ones of the plurality of semiconductor chips with selected ones of the first metallic areas.
14. The semiconductor chip package according to claim 12 , wherein
the carrier comprises one or more of a direct copper bonded substrate, a direct aluminum bonded substrate, and an active metal brazing substrate, wherein the substrate comprises a ceramic layer or a dielectric layer.
15. The semiconductor chip package according to claim 12 , wherein
the plurality of semiconductor chips comprises a plurality of semiconductor transistor chips and a plurality of diode chips respectively.
16. The semiconductor chip package according to claim 15 , wherein
the plurality of semiconductor transistor and the plurality of semiconductor diode chips are connected to form an AC/AC converter circuit, an AC/DC converter circuit, a DC/AC converter circuit, a DC/DC converter circuit, or a frequency converter circuit.
17. A semiconductor chip package comprising:
a carrier;
a plurality of semiconductor chips on the carrier;
a first encapsulation layer above the plurality of semiconductor chips and the carrier and having a first major surface parallel to major surfaces of the plurality of semiconductor chips;
via connections extending through the first encapsulation layer to the first major surface, the via connections being connected with the plurality of semiconductor chips respectively;
a metallization layer disposed directly on the first major surface the first encapsulation layer above the plurality of semiconductor chips, the metallization layer comprising a plurality of first metallic areas connected with the respective via connections;
external connectors connected to selected ones of the first metallic areas; and
a second encapsulation layer above the metallization layer, wherein the external connectors extend outwardly through a side surface of the second encapsulation layer.
18. The semiconductor chip package according to claim 17 , wherein the via connections comprise via holes filled with a metallic material.
19. The semiconductor chip package according to claim 17 , further comprising:
a solder resist layer disposed on the metallization layer,
wherein the second encapsulation layer is disposed above the solder resist layer and above side faces of the solder resist layer and side faces of the first encapsulation layer.
20. The semiconductor chip package according to claim 17 , further comprising:
electronic devices formed above the first metallic areas and connected to selected ones of the first metallic areas.