AMINE CATALYSTS FOR LOW TEMPERATURE ALD/CVD SiO2 DEPOSITION USING HEXACHLORODISILANE/H2O
A precursor composition is described, useful for low temperature (<150° C.) vapor deposition of silicon dioxide. The precursor composition includes hexachlorodisilane, water, and nitrogenous catalyst including an amide compound selected from the group consisting of N-ethylacetamide and N,N-dimethylformamide. Compositions and processes for forming silicon dioxide at a low temperature with alternative chemistries are also described, e.g., a precursor composition of chloroaminosilane and water, or a precursor composition of chlorosilane and ethanolamine, which may be utilized in pulsed chemical vapor deposition or atomic layer deposition processes.
1 . A precursor composition for low temperature (<150° C.) vapor deposition of silicon dioxide, said precursor composition comprising hexachlorodisilane, water, and nitrogenous catalyst comprising an amide compound selected from the group consisting of N-ethylacetamide and N,N-dimethylformamide.
2 . The precursor composition of claim 1 , wherein the nitrogenous catalyst comprises N-ethylacetamide.
3 . The precursor composition of claim 1 , wherein the nitrogenous catalyst comprises N,N-dimethylformamide.
4 . A vapor deposition process for low temperature (<150° C.) deposition on a substrate of silicon dioxide, said process comprising volatilization of a precursor composition to form precursor vapor, and contacting the precursor vapor with a substrate to deposit silicon dioxide thereon, wherein the precursor composition comprises hexachlorodisilane, water, and nitrogenous catalyst comprising an amide compound selected from the group consisting of N-ethylacetamide and N,N-dimethylformamide.
5 . The vapor deposition process of claim 4 , wherein the nitrogenous catalyst comprises N-ethylacetamide.
6 . The vapor deposition process of claim 4 , wherein the nitrogenous catalyst comprises N,N-dimethylformamide.
7 . The vapor deposition process of claim 4 , wherein said contacting is carried out at temperature in a range of from 50 to 70° C.
8 . The vapor deposition process of claim 4 , wherein the deposited silicon dioxide forms a spacer for lithography.
9 . The vapor deposition process of claim 4 , comprising a pulsed chemical vapor deposition process.
10 . The vapor deposition process of claim 4 , comprising an atomic layer deposition process.
11 . A method of manufacturing a product selected from the group consisting of semiconductor products, flat-panel displays, and solar panels, said method comprising the vapor deposition process according to claim 4 .
12 - 27 . (canceled)