Junctionless back end of the line via contact
A method of forming an interconnect structure includes providing a first dielectric layer, patterning a wire opening in a first dielectric layer, lining the wire opening with a metal liner and includes filling the wire opening with a first conductive material. The method also includes depositing a first cap on the first dielectric layer, depositing a second dielectric layer, and patterning a via trench in the second dielectric layer. The method also includes depositing a metal liner, removing the metal liner from a via junction, and enlarging the contact area. The method also includes filling the via trench with a second conductive material to form a via.
1. An interconnect structure comprising:
a bottom layer, the bottom layer comprising:
a dielectric material,
a first conductive material patterned in a first trench in the bottom dielectric material, and
a first cap comprised of two layers, wherein a first layer of the two layers is formed on the dielectric material and a second layer of the two layers is formed on the first conductive material and the first layer; and
an upper layer, the upper layer comprising:
an interlayer dielectric material,
a second conductive material patterned in a second trench in the interlayer dielectric material,
a metal liner patterned along the sidewalls of the second trench, and
a second cap,
wherein a sidewall of the first conductive material is recessed from a bottom surface of the second trench; and
wherein an interface where the recessed sidewall of the first conductive material directly contacts the second conductive material is within the first trench.
2. The interconnect structure of claim 1 , wherein the first conductive material and the second conductive material are the same material.
3. The interconnect structure of claim 2 , wherein the first conductive material and the second conductive material are copper.
4. The interconnect structure of claim 1 , wherein the metal liner is positioned between the first conductive material and the dielectric material and between the second conductive material and the interlayer dielectric material.
5. The interconnect structure of claim 1 , wherein the dielectric layer has a dielectric constant less than or equal to four.
6. The interconnect structure of claim 1 , wherein the dielectric layer is a composite layer.
7. The interconnect structure of claim 1 , wherein the dielectric layer comprises silicon dioxide.
8. The interconnect structure of claim 1 , wherein the dielectric layer comprises a porous layer.
9. The interconnect structure of claim 1 , wherein the dielectric layer comprises spin on glass.
10. The interconnect structure of claim 1 , wherein the metal liner comprises a material selected from the group consisting of tantalum, tantalum nitride, titanium, titanium nitride, tungsten, ruthenium, and ruthenium nitride.
11. The interconnect structure of claim 1 , wherein the conductive material comprises a conductive metal selected from the group consisting of tungsten, copper, aluminum, and alloys thereof.
12. The interconnect structure of claim 1 , wherein the first cap and second cap form a dielectric barrier.
13. The interconnect structure of claim 1 , wherein the first cap or second cap comprise silicon carbide, silicon nitride, silicon dioxide, or nitrogen or hydrogen doped silicon carbide.
14. The interconnect structure of claim 1 , wherein the interconnect structure has four layers.
15. The interconnect structure of claim 3 , wherein the first conductive material and the second conductive material form a continuous layer of copper.
16. The interconnect structure of claim 1 , wherein the first cap and the second cap comprise different materials.
17. The interconnect structure of claim 1 , wherein the second layer of the two layers is formed on the metal liner.