Image intensifier bloom mitigation
Image intensifiers may include a photocathode that emits photoelectrons in proportion to the rate photons impact the photocathode. The photoelectrons are multiplied using a microchannel plate that includes a plurality of microchannels. Photoelectrons are scattered by the microchannel plate when the photoelectrons strike the surface of the microchannel plate rather than enter one of the microchannels. Electron scatter within an image intensifier results in a halo or bloom around bright or luminous objects. Halo or bloom may be minimized by reducing the electron scatter within the image intensifier. Deposition of an anti-scattering layer on the surface of the microchannel plate within the image intensifier can absorb photoelectrons that fail to enter a microchannel and may thus reduce the incidence of halo or bloom.
1. A reduced bloom effect image intensifier, comprising:
a photocathode to generate electrons in response to incident electromagnetic energy;
a phosphor screen;
a microchannel plate disposed between the photocathode and the phosphor screen, the microchannel plate having a first surface oriented toward the photocathode, a transversely opposed second surface oriented toward the phosphor screen, and a plurality of microchannels fluidly coupling the first surface and the second surface, the microchannel plate including:
an anti-scattering layer, the anti-scattering layer deposited across at least a portion of the first surface of the microchannel plate and extending a distance inside an entrance of each of the plurality of microchannels such that at least a portion of the entrance to the respective microchannel remains unobstructed;
wherein the anti-scattering layer includes at least one low-Z material that forms electron absorbing structures projecting from the first surface to provide an extended surface area to capture at least a portion of the electrons that fail to enter one of the plurality of microchannels.
2. The image intensifier of claim 1 , further comprising an input electrode disposed across at least a portion of the first surface between the first surface and the and anti-scattering layer.
3. The image intensifier of claim 2 , further comprising an output electrode disposed across at least a portion of the second surface and oriented toward the phosphor screen.
4. The image intensifier of claim 3 , further comprising a high secondary emission surface disposed across at least a portion of an exposed surface in each of the plurality of microchannels.
5. The image intensifier of claim 1 wherein the at least one low-Z material comprises at least one of: boron, nickel, chrome, copper, and titanium.
6. The image intensifier of claim 5 wherein the anti-scattering layer comprises an anti-scattering layer having a thickness of from about 10 nanometers to about 1000 nanometers.
7. The image intensifier of claim 1 wherein the extended surface area includes a plurality of low-density, aligned, columnar structures.
8. The image intensifier of claim 5 , further comprising:
a fiber optic bundle having a first end and a second end, the first end disposed proximate the phosphor screen and the second end disposed proximate an output window.
9. The image intensifier of claim 8 wherein the second end of the fiber optic bundle is rotated 180 degrees about an optical axis of the image intensifier such that an image provided by the phosphor screen is inverted when viewed at the output window.
10. A method of reducing bloom effect in an image intensifier, comprising:
generating electrons proportionate to incoming photon intensity via a photocathode;
applying a voltage bias across a microchannel plate that includes a plurality of microchannels using a first electrode disposed on a first surface of the microchannel plate and a second electrode disposed on a second surface of the microchannel plate, the second surface transversely opposed to the first surface;
causing the electrons generated by the photocathode to travel toward the first surface of the microchannel plate; and
absorbing, via an anti-scattering layer deposited on at least a portion of the first surface of the microchannel plate and extending a distance inside an entrance of each of the plurality of microchannels such that at least a portion of the entrance to the respective microchannel remains unobstructed, a portion of the generated electrons that fail to enter one of the plurality of microchannels;
wherein the anti-scattering layer includes at least one low-Z material that forms electron absorbing structures that project from the first surface to provide an extended surface area to capture at least a portion of the electrons that fail to enter one of the plurality of microchannels.
11. The method of claim 10 , further comprising:
multiplying at least a portion of the generated electrons using a high secondary emission surface disposed inside each of the plurality of microchannels.
12. The method of claim 11 , further comprising:
converting at least a portion of the multiplied electrons into a visible image using a phosphor screen disposed a distance from the microchannel plate.
13. A method of manufacturing reduced bloom effect image intensifier, the method comprising:
depositing an anti-scattering layer that includes at least one low-Z material on at least a portion of a first surface of a microchannel plate, the microchannel plate including a plurality of microchannels fluidly coupling the first surface to a transversely opposed second surface, the anti-scattering layer to absorb at least a portion of electrons incident upon the first surface, the anti-scattering layer extending a distance inside an entrance of each of the plurality of microchannels such that at least a portion of the entrance to the respective microchannel remains unobstructed;
wherein the at least one low-Z material forms electron absorbing structures projecting from the first surface to provide an extended surface area to capture at least a portion of the electrons that fail to enter one of the plurality of microchannels.
14. The method of claim 13 , further comprising:
disposing a photocathode a first distance from the first surface of the microchannel plate.
15. The method of claim 14 , further comprising:
disposing a phosphor screen a second distance from the second surface of the microchannel plate.
16. The method of claim 15 , further comprising:
disposing a first electrode proximate the first surface of the microchannel plate, the first electrode positioned between the anti-scattering layer and the first surface of the microchannel plate; and
disposing a second electrode proximate the second surface of the microchannel plate.
17. The method of claim 16 , further comprising:
conductively coupling a power supply to the first electrode and second electrode, the power supply to, when in operation, apply a bias voltage across the microchannel plate.
18. The method of claim 15 , further comprising:
disposing a first end of a fiber optic bundle proximate the phosphor screen; and
disposing a second end of a fiber optic bundle proximate an output window.
19. The method of claim 18 , further comprising:
rotating the second end of the fiber optic bundle through an angle of about 180 degrees measured with respect to the first end of the fiber optic bundle.
20. The method of claim 13 wherein depositing an anti-scattering layer that includes at least one low-Z material on at least a portion of a first surface of a microchannel plate comprises:
depositing an anti-scattering layer that includes at least one low-Z material on at least a portion of a first surface of a microchannel plate, the anti-scattering layer having a thickness of from about 10 nanometers to about 1000 nanometers.
21. The method of claim 20 wherein depositing an anti-scattering layer that includes at least one low-Z material on at least a portion of a first surface of a microchannel plate comprises:
depositing an anti-scattering layer that includes at least one of: boron; nickel; chrome; copper titanium; an oxide containing boron, nickel, chrome, copper, or titanium; or; a carbide containing boron, nickel, chrome, copper, or titanium on at least a portion of the first surface of the microchannel plate.
22. The method of claim 20 wherein depositing an anti-scattering layer that includes at least one low-Z material on at least a portion of a first surface of a microchannel plate comprises:
depositing an anti-scattering layer that includes at least one low-Z material on at least a portion of a first surface of a microchannel plate via physical vapor deposition.
23. The method of claim 22 wherein depositing an anti-scattering layer that includes at least one low-Z material on at least a portion of a first surface of a microchannel plate via physical vapor deposition comprises:
depositing an anti-scattering layer that includes at least one low-Z material on at least a portion of a first surface of a microchannel plate via at least one of ion assist, E-beam, laser ablation, sputtering, or resistance evaporation.
24. The method of claim 20 wherein depositing an anti-scattering layer that includes at least one low-Z material on at least a portion of a first surface of a microchannel plate comprises:
depositing an anti-scattering layer that includes at least one low-Z material having an extended surface area on at least a portion of a first surface of a microchannel plate via physical vapor deposition.
25. The method of claim 24 wherein depositing an anti-scattering layer that includes at least one low-Z material having an extended surface area on at least a portion of a first surface of a microchannel plate comprises:
depositing an anti-scattering layer that includes at least one low-Z material in which the extended surface area includes a plurality of low-density, aligned, columnar structures.
26. The method of claim 25 wherein depositing an anti-scattering layer that includes at least one low-Z material in which the extended surface area includes the plurality of low-density, aligned, columnar structures comprises:
depositing an anti-scattering layer that includes at least one low-Z material in which the extended surface area includes the plurality of low-density, aligned, columnar structures, each of the plurality of low-density, aligned, columnar structures formed using at least one of: a glancing angle approach or a post-production oxidation.