IP Library Granted Patent US 9,852,927
Granted Patent B2
US 9,852,927 · App. 15/294,707 · Granted Dec 26, 2017

Near-unity photoluminescence quantum yield in MoS

Inventors: Matin Amani (Berkeley, CA); Der-Hsien Lien (Berkeley, CA); Daisuke Kiriya (Berkeley, CA); James Bullock (Tarcutta, AU); Ali Javey (Lafayette, CA)
Assignee: The Regents of the University of California
H01L21/465C09K11/00H01L21/02568H01L29/22H01L31/00H01S3/162
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Quick Facts
Patent No.
US 9,852,927
App. No.
15/294,707
Granted
Dec 26, 2017
Kind
B2
Abstract

Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS 2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS 2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8±0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.

Claims (6)

1. A method of passivating and repairing a two-dimensional (2D) transition metal dichalcogenide (TMDC) to enhance a photoluminescence quantum yield (QY) comprising:

dissolving bis(trifluoromethane)sulfonimide (TFSI) in 1,2-dichloroethane (DCE) to make a solution;

diluting the solution with 1,2-dichlorobenzene (DCB) or DCE to make a TFSI solution; immersing a TMDC sample in the TFSI solution; and

annealing the TMDC sample at an elevated temperature.

2. The method of claim 1 , wherein the 2D transition metal dichalcogenide is selected from the group consisting of MoS 2 , WS 2 , MoSe 2 , Wse 2 , MoTe 2 , and WTe 2 .

3. The method of claim 1 , further comprising dissolving 20 mg of TFSI in 10 ml of DCE to make a 2 mg/ml solution, further diluting the solution with DCB or DCE to make a 0.2 mg/ml TFSI solution, immersing the TMDC sample in the 0.2 mg/ml TFSI solution in a closed vial for between 1 min and 20 min , at an elevated temperature between 90° C. to 110 ° C., removing the TMDC sample and blow drying with nitrogen without rinsing and subsequently annealing the TMDC sample at an elevated temperature between 90° C. to 110° C. for between 1 min and 10 min.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 11, 2017
From: AMANI, MATIN; LIEN, DER-HSIEN; KIRIYA, DAISUKE; BULLOCK, JAMES; JAVEY, ALI
To: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Reel/Frame 042978/0851 →
CONFIRMATORY LICENSE Recorded Jan 9, 2017
From: REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE
To: ENERGY, UNITED STATES DEPARTMENT OF
Reel/Frame 041328/0430 →
Continuity (2)
Provisional Application 62242427 · Oct 16, 2015
Related Publication 20170110338A1 · Apr 20, 2017