Semiconductor device and manufacturing method of the same
There are provided a highly reliable semiconductor device capable of suppressing occurrence of cracks as well as securing flatness and a manufacturing method therefor. The semiconductor device includes: a semiconductor substrate; an element region; and a non-element region. The non-element region includes: a top-layer metal wiring in a top layer of metal wirings formed in the non-element region; a flattening film covering an upper surface of the top-layer metal wiring; and a protecting film formed over the flattening film. A removed part where the protecting film is removed is formed in at least part of the non-element region.
1. A solid-state image sensing device, comprising:
a semiconductor substrate having a main surface;
an element region comprising photodetectors formed over the main surface;
a non-element region comprising wiring layers formed so as to surround the outside of the element region over the main surface;
a guard ring formed by a plurality of the wiring layers stacked in the non-element region;
a flattening film formed over the guard ring; and
a protecting film covering a portion of the flattening film,
wherein a thickness of a portion of the flattening film not overlapping the guard ring in plan view is less than a thickness of a portion of the flattening film overlapping the guard ring, and
wherein the thickness of the portion of the flattening film overlapping the guard ring in plan view is less than a thickness of another portion of the flattening film overlapping the guard ring.
2. A solid-state image sensing device according to claim 1 , wherein
the protecting film exists only on a thick film thickness portion of the flattening film.
3. A solid-state image sensing device according to claim 2 , further comprising:
a first slot formed in a thin film thickness portion of the flattening film over the guard ring, wherein
the first slot extends, in a plan view, along an edge portion of the element region, and
a bottom surface of the first slot extends from an upper surface of the flattening film to a depth of an upper surface of the guard ring.
4. A solid-state image sensing device according to claim 3 , wherein
the first slot is formed immediately above the guard ring, and
the upper surface of the guard ring is exposed from the flattening film in a bottom surface of the first slot.
5. A solid-state image sensing device according to claim 3 , wherein
the first slot is formed outside the guard ring in a plan view.
6. A solid-state image sensing device according to claim 1 , further comprising:
a first slot formed in the non-element region, wherein
the first slot extends, in a plan view, along an edge portion of the element region,
a bottom surface of the first slot extends from an upper surface of the flattening film to a depth of an upper surface of the guard ring, and
the protecting film extends to an end portion of the main surface.
7. A solid-state image sensing device according to claim 6 , wherein
the first slot is formed immediately above the guard ring, and
the upper surface of the guard ring is exposed from the flattening film in a bottom surface of the first slot.
8. A solid-state image sensing device according to claim 6 , wherein
the first slot is formed outside the guard ring in a plan view.
9. A solid-state image sensing device according to claim 1 , wherein
the guard ring is connected to the semiconductor substrate.
10. A solid-state image sensing device according to claim 1 , further comprising:
color filters formed immediately above the photodetectors in the element region.
11. A solid-state image sensing device according to claim 1 , wherein the flattening film is in direct contact with a portion of an upper surface of a top-layer metal wiring of the guard ring.