Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects

1. A crystal pulling system for growing a monocrystalline ingot from a melt of a semiconductor or solar-grade material, the crystal pulling system comprising:

a crucible for containing the melt of the semiconductor or solar-grade material;

a pulling mechanism including a seed crystal connected to a pull cable for pulling the monocrystalline ingot from the melt along a pull axis; and

a multi-stage cooling system configured to cool the monocrystalline ingot at different cooling rates as the monocrystalline ingot is pulled from the melt by the pulling mechanism, the multi-stage cooling system including:

an annular heat shield positioned concentric with the crucible and defining an elongate passage for receiving the monocrystalline ingot; and

a multi-stage heat exchanger positioned within the elongate passage defined by the annular heat shield, the multi-stage heat exchanger including a fluid-cooled housing defining a central passage for receiving the monocrystalline ingot, the fluid-cooled housing includes a cooling tube disposed within an interior chamber of the fluid-cooled housing, the cooling tube configured to channel a cooling fluid through the fluid-cooled housing, the fluid-cooled housing having an upper portion and a lower portion spaced vertically from the upper portion by an annular gap, wherein the cooling tube extends from the upper portion of the fluid-cooled housing into the lower portion of the fluid-cooled housing and includes an interconnecting member connecting the cooling tube in the upper portion with the cooling tube in the lower portion, the cooling tube within the upper portion defining an opening that channels the cooling fluid through the opening into the interior chamber of the fluid-cooled housing.

2. The crystal pulling system of claim 1 , wherein the annular heat shield is positioned radially outward from the fluid-cooled housing of the multi-stage heat exchanger, and is oriented to reflect heat towards the monocrystalline ingot through the annular gap defined by the fluid-cooled housing.

3. The crystal pulling system of claim 1 , wherein the pulling mechanism is configured to raise and lower the seed crystal and to rotate the seed crystal about the pull axis.

4. The crystal pulling system of claim 1 , wherein the multi-stage heat exchanger includes a quartz baffle disposed proximate the annular gap defined by the fluid-cooled housing, the quartz baffle configured to inhibit gas flow through the annular gap.

5. The crystal pulling system of claim 1 further comprising a gas flow barrier extending under the lower portion of the fluid-cooled housing and between the lower portion of the fluid-cooled housing and the melt such that a second annular opening is defined between the gas flow barrier and the lower portion of the fluid-cooled housing.

6. The crystal pulling system of claim 5 , wherein the gas flow barrier is connected to a lower end of the annular heat shield and extends radially inward from the annular heat shield and under the lower portion of the fluid-cooled housing.

7. The crystal pulling system of claim 5 , wherein the gas flow barrier occludes the lower portion of the fluid-cooled housing from a direct vertical line-of-sight with the melt.

8. A crystal pulling system for growing a monocrystalline ingot from a melt of a semiconductor or solar-grade material, the crystal pulling system comprising:

a crucible for containing the melt of the semiconductor or solar-grade material;

a pulling mechanism including a seed crystal connected to a pull cable to pull the monocrystalline ingot from the melt along a pull axis; and

a multi-stage cooling system configured to cool monocrystalline ingot at different cooling rates as the monocrystalline ingot is pulled from the melt by the pulling mechanism, the multi-stage cooling system including:

an annular heat shield positioned concentric with the crucible and defining an elongate passage for receiving the monocrystalline ingot; and

a multi-stage heat exchanger positioned within the elongate passage defined by the annular heat shield, the multi-stage heat exchanger including a fluid-cooled housing defining a central passage for receiving the monocrystalline ingot, the fluid-cooled housing having an upper portion and a lower portion spaced vertically from the upper portion by an annular gap, the upper portion of the fluid-cooled housing includes a cooling tube disposed within an interior chamber of the upper portion of the fluid-cooled housing, the cooling tube configured to channel a cooling liquid through the upper portion of the fluid-cooled housing, wherein the cooling tube extends into the lower portion of the fluid-cooled housing and includes an interconnecting member connecting the cooling tube in the upper portion with the cooling tube in the lower portion, the cooling tube within the upper portion defining an opening that channels the cooling fluid through the opening into the interior chamber of the fluid-cooled housing.

9. The crystal pulling system of claim 8 , wherein the cooling tube is a helical coil cooling tube.

10. The crystal pulling system of claim 8 , wherein the fluid-cooled housing include baffles within the interior chamber of the fluid-cooled housing for directing the exhausted cooling fluid through the interior chamber of the fluid-cooled housing.

11. The crystal pulling system of claim 10 , wherein the baffles direct the exhausted cooling fluid to the lower portion using baffles.