Material selective regrowth structure and method
The disclosure relates to a method for creating a nanoscale structure. The method includes forming a window in a semiconductor structure, the semiconductor structure comprising a substrate, a first semiconductor layer, and a mask layer; depositing a second semiconductor layer within the window such that a gap remains between the second semiconductor and a portion of the window; and regrowing the first semiconductor layer such that the first semiconductor layer fills the gap.
1. A nanoscale structure comprising:
a substrate;
a first semiconductor layer on top of the substrate; and
a second semiconductor layer deposited within a window formed in the substrate and the first semiconductor layer such that a gap exists between the second semiconductor and a portion of the first semiconductor layer/and or the substrate, wherein the gap is filled by a regrown first semiconductor layer.
2. The structure of claim 1 , wherein the regrown first semiconductor layer overgrows the second semiconductor layer.
3. The structure of claim 1 , wherein the first semiconductor layer is covered by the regrown first semiconductor layer.
4. The structure of claim 1 , wherein the second semiconductor layer comprises a sidewall that is non-vertical.
5. The structure of claim 4 , wherein the gap is concave.
6. The structure of claim 4 , wherein the gap is convex.
7. The structure of claim 3 , further comprising a third semiconductor layer on the regrown first semiconductor layer.
8. The structure of claim 7 , wherein the third semiconductor layer comprises a different material than the second semiconductor layer.
9. The structure of claim 7 , wherein the third semiconductor layer is a different size than the second semiconductor layer.
10. The structure of claim 7 , wherein the third semiconductor layer is a different shape than the second semiconductor layer.
11. The structure of claim 1 , wherein the first semiconductor layer comprises a different material than the regrown first semiconductor layer.