Tungsten alloys in semiconductor devices
Conducting alloys comprising cobalt, tungsten, and boron and conducting alloys comprising nickel, tungsten, and boron are described. These alloys can, for example, be used to form metal interconnects, can be used as liner layers for traditional copper or copper alloy interconnects, and can act as capping layers. The cobalt-tungsten and nickel-tungsten alloys can be deposited using electroless processes.
1. A semiconductor device comprising;
a semiconductor substrate having a plurality of transistors thereon;
a layer of dielectric material above the semiconductor substrate, wherein the dielectric material has a depression formed therein; and
a conducting alloy material wherein the conducting alloy material fills the depression and wherein the conducting alloy material is comprised of 55 to 75 atomic percent cobalt, 20 to 40 atomic percent tungsten, and 1 to 5 atomic percent boron.
2. The device of claim 1 wherein the conducting alloy material is comprised of 60 to 70 atomic percent cobalt, 25 to 35 atomic percent tungsten, and 1 to 5 atomic percent boron.
3. The device of claim 1 wherein the depression has at least one side and the side of the depression is in direct contact with the conducting alloy material.
4. The device of claim 1 wherein the dielectric material is selected from the group consisting of silicon dioxide, perfluorocyclobutane, polytetrafluoroethylene, silicon nitride, silicon oxynitride, boron-doped silicon oxide, phosphorous-doped silicon oxide, carbon-doped silicon oxide, fluorosilicate glass, silsesquioxane, and organosilicate glass.
5. The device of claim 1 wherein the depression is a conducting interconnect between a first device and a second device on the semiconductor substrate.
6. A semiconductor device comprising;
a semiconductor substrate having a plurality of transistors thereon;
a layer of dielectric material above the semiconductor substrate, wherein the dielectric material has a depression formed therein; and
a conducting alloy material wherein the conducting alloy material fills the depression and wherein the conducting alloy material is comprised of 55 to 75 atomic percent nickel, 20 to 40 atomic percent tungsten, and 1 to 5 atomic percent boron.
7. The device of claim 6 wherein the conducting alloy material is comprised of 60 to 70 atomic percent cobalt, 25 to 35 atomic percent tungsten, and 1 to 5 atomic percent boron.
8. The device of claim 6 wherein the depression has at least one side and the side of the depression is in direct contact with the conducting alloy material.
9. The device of claim 6 wherein the dielectric material is selected from the group consisting of silicon dioxide, perfluorocyclobutane, polytetrafluoroethylene, silicon nitride, silicon oxynitride, boron-doped silicon oxide, phosphorous-doped silicon oxide, carbon-doped silicon oxide, fluorosilicate glass, silsesquioxane, and organosilicate glass.
10. The device of claim 6 wherein the depression is a conducting interconnect between a first device and a second device on the semiconductor substrate.
11. A computing device comprising;
a motherboard;
a communication chip mounted on the motherboard; and
a processor mounted on the motherboard operably coupled to the communication chip, the processor comprising:
a semiconductor substrate having a plurality of transistors thereon;
a layer of dielectric material above the semiconductor substrate, wherein the dielectric material has a depression formed therein; and
a conducting alloy material wherein the conducting alloy material fills the depression and wherein the conducting alloy material is comprised of 55 to 75 atomic percent cobalt or nickel, 20 to 40 atomic percent tungsten, and 1 to 5 atomic percent boron.
12. The device of claim 11 wherein the conducting alloy material is comprised of 60 to 70 atomic percent cobalt or nickel, 25 to 35 atomic percent tungsten, and 1 to 5 atomic percent boron.
13. The device of claim 11 wherein the depression has at least one side and the side of the depression is in direct contact with the conducting alloy material.
14. The device of claim 11 wherein the dielectric material is selected from the group consisting of silicon dioxide, perfluorocyclobutane, polytetrafluoroethylene, silicon nitride, silicon oxynitride, boron-doped silicon oxide, phosphorous-doped silicon oxide, carbon-doped silicon oxide, fluorosilicate glass, silsesquioxane, and organosilicate glass.
15. The device of claim 11 wherein the depression is a conducting interconnect between a first device and a second device on the semiconductor substrate.