Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic apparatus
There is provided a solid-state imaging device including a first substrate having a pixel circuit including a pixel array unit formed thereon, and a second substrate having a plurality of signal processing circuits formed thereon so as to be arranged through a scribe region. The first substrate and the second substrate are stacked.
1. A solid-state imaging device including:
a first substrate having a pixel circuit including a pixel array unit formed thereon;
a second substrate having a plurality of signal processing circuits formed thereon,
wherein the plurality of signal processing circuits are arranged adjacent to one another and include a spacing region therebetween,
wherein the first substrate and the second substrate are stacked,
wherein a first signal processing circuit of the plurality of signal processing circuits and a second signal processing circuit of the plurality of signal processing circuits are electrically connected, and
wherein the first signal processing circuit and the second signal processing circuit are electrically connected through a first wiring layer formed on the second substrate;
a first moisture-resistant structure that surrounds at least a part of a periphery of the first signal processing circuit; and
a second moisture-resistant structure that surrounds at least a part of a periphery of the second signal processing circuit.
2. The solid-state imaging device according to claim 1 , wherein each of the signal processing circuits have a same set of functions.
3. The solid-state imaging device according to claim 2 , wherein the same set of functions includes operating as a same signal processing circuit.
4. The solid-state imaging device according to claim 2 , wherein a function to be enabled and a function to be disabled are configured in each of the signal processing circuits in response to one or more external signals.
5. The solid-state imaging device according to claim 1 , wherein the first signal processing circuit of the plurality of signal processing circuits is configured to generate first pixel data based on a pixel signal of a pixel in a first region of the pixel array unit, and wherein the second signal processing circuit of the plurality of signal processing circuits is configured to generate second pixel data based on a pixel signal of a pixel in a second region different from the first region of the pixel array unit.
6. The solid-state imaging device according to claim 1 , wherein the first wiring layer is formed on a top layer of a wiring layer of the second substrate.
7. The solid-state imaging device according to claim 1 , wherein the first signal processing circuit and the second signal processing circuit have a common circuit pattern, wherein the first wiring layer is formed on the top layer of the wiring layer of the second substrate, and includes a top layer of the first moisture-resistant structure and a top layer of the second moisture-resistant structure, wherein the top layer of the first moisture-resistant structure, and a first wall connecting the top layer of the first moisture-resistant structure and a layer one below the top layer are not formed at a first portion through which a wiring of the first wiring layer of the first moisture-resistant structure passes, and wherein the top layer of the second moisture-resistant structure, a second wall connecting the top layer of the second moisture-resistant structure, and a layer one below the top layer are not formed at a second portion through which a wiring of the first wiring layer of the second moisture-resistant structure passes.
8. The solid-state imaging device according to claim 7 , wherein the first wall is not formed at a third portion of the first moisture-resistant structure corresponding to the second portion of the second moisture-resistant structure, and wherein the second wall is not formed at a fourth portion of the second moisture-resistant structure corresponding to the first portion of the first moisture-resistant structure.
9. The solid-state imaging device according to claim 7 , wherein a wiring layer, except for the first wiring layer of the second substrate, is formed by a one-shot exposure, and the first wiring layer is formed by a separate exposure.
10. The solid-state imaging device according to claim 7 , wherein interlayer insulation films of second and subsequent wiring layers are made of a low-K film, the second wiring layer being one below the first wiring layer, and wherein an interlayer insulation film above the second wiring layer is made of an insulation film having a water resistance higher than that of the low-K film.
11. The solid-state imaging device according to claim 1 , wherein the solid-state imaging device is mounted to a package.
12. The solid-state imaging device according to claim 1 , wherein the first signal processing circuit and the second signal processing circuit are electrically connected to a substrate by one or more bond wires, and wherein the substrate is at least one of provided in the solid-state imaging device, provided in a same package, and provided outside the package.
13. The solid-state imaging device according to claim 1 , wherein the first signal processing circuit is configured to generate first pixel data based on a pixel signal of a pixel in a first region of the pixel array unit, and supply the generated first pixel data to the second signal processing circuit, and wherein the second signal processing circuit is configured to generate second pixel data based on a pixel signal of a pixel in a second region different from the first region of the pixel array unit, and combine the generated second pixel data with the first pixel data.
14. The solid-state imaging device according to claim 1 , wherein the first signal processing circuit is configured to generate first pixel data based on a pixel signal of a pixel in a predetermined region of the pixel array unit, and supply the generated first pixel data to the second signal processing circuit, and wherein the second signal processing circuit is configured to generate second pixel data based on a pixel signal of a pixel of the pixel array unit in the same region as that of the first signal processing circuit, and generate third pixel data by adding the first pixel data and the second pixel data.
15. The solid-state imaging device according to claim 1 , wherein a third substrate is stacked on a surface of the second substrate that is opposite a surface of the second substrate adjacent to the first substrate.
16. The solid-state imaging device according to claim 15 , further comprising a memory on the third substrate that is configured to store pixel data obtained by analog-to-digital (AD) converting of a pixel signal of each pixel in the pixel array unit.
17. The solid-state imaging device according to claim 1 , further comprising an analog-to-digital (AD) conversion unit on the second substrate, wherein the AD conversion unit is configured to convert a pixel signal of each pixel in the pixel array unit in units of columns of the pixel array unit.
18. The solid-state imaging device according to claim 1 , further comprising an analog-to-digital (AD) conversion unit on the second substrate, wherein the AD conversion unit is configured to convert a pixel signal of each pixel in the pixel array unit in units of regions that include a two-dimensional array of pixels of a predetermined number in the pixel array unit.
19. The solid-state imaging device according to claim 1 , wherein the pixel circuit is formed by a separate exposure, and wherein at least a portion of one or more layers of respective signal processing circuits are formed by a one-shot exposure.
20. The solid-state imaging device according to claim 1 , wherein the first signal processing circuit of the plurality of signal processing circuits and the second signal processing circuit of the plurality of signal processing circuits are formed by a same one-shot exposure.
21. The solid-state imaging device according to claim 1 , wherein the spacing region between the plurality of signal processing circuits is a scribe region.
22. A solid-state imaging device including:
a first substrate having a pixel circuit including a pixel array unit formed thereon,
a second substrate having a plurality of signal processing circuits formed thereon, wherein the plurality of signal processing circuits are arranged adjacent to one another and include a spacing region therebetween;
wherein the first substrate and the second substrate are stacked,
wherein a first signal processing circuit of the plurality of signal processing circuits and a second signal processing circuit of the plurality of signal processing circuits are electrically connected, and
wherein the first signal processing circuit and the second signal processing circuit are electrically connected through a first wiring layer formed on the second substrate; and
a moisture-resistant structure that surrounds at least a part of a periphery of the second substrate.
23. The solid-state imaging device according to claim 22 , wherein at least a portion of one or more layers of the respective signal processing circuits are formed by a one-shot exposure, and wherein a layer having a moisture-resistant structure formed thereon is formed by the separate exposure.
24. A manufacturing method of a solid-state imaging device, including:
forming a pixel circuit including a pixel array unit so as to be two-dimensionally arranged through a scribe region on a first semiconductor substrate, by using one or more separate exposures;
forming a signal processing circuit that processes a pixel signal of each pixel in the pixel array unit so as to be two-dimensionally arranged through a scribe region on a second semiconductor substrate, by using a one-shot exposure, wherein the signal processing circuit includes a first signal processing circuit and a second signal processing circuit arranged adjacent to one another and include the scribe region of the second semiconductor substrate therebetween;
stacking the first semiconductor substrate and the second semiconductor substrate such that the scribe region of the first semiconductor substrate overlaps the scribe region of the second semiconductor substrate; and
cutting a semiconductor substrate including the first semiconductor substrate and the second semiconductor substrate that are stacked, along the scribe region of the first semiconductor substrate;
forming a first moisture-resistant structure that surrounds at least a part of a periphery of the first signal processing circuit; and
forming a second moisture-resistant structure that surrounds at least a part of a periphery of the second signal processing circuit, wherein a wiring layer that electrically connects the first signal processing circuit and the second signal processing circuit, which are disposed in the same solid-state imaging device, is formed on the second semiconductor substrate.
25. The manufacturing method of a solid-state imaging device according to claim 24 , wherein the wiring layer is formed on a top layer of a wiring layer of the second semiconductor substrate.
26. The manufacturing method of a solid-state imaging device according to claim 24 , wherein the first signal processing circuit and the second signal processing circuit are arranged adjacent to one another and include the scribe region of the second semiconductor substrate therebetween, and wherein a wiring and a via for electrically connecting the first signal processing circuit and the second signal processing circuit, which are disposed on the same solid-state imaging device, are formed on the first semiconductor substrate.
27. A manufacturing method of a solid-state imaging device, including:
forming a pixel circuit including a pixel array unit so as to be two-dimensionally arranged through a scribe region on a first semiconductor substrate, by using one or more separate exposures;
forming a signal processing circuit that processes a pixel signal of each pixel in the pixel array unit so as to be two-dimensionally arranged through a scribe region on a second semiconductor substrate, by using a one-shot exposure wherein the signal processing circuit includes a first signal processing circuit and a second signal processing circuit;
stacking the first semiconductor substrate and the second semiconductor substrate such that the scribe region of the first semiconductor substrate overlaps the scribe region of the second semiconductor substrate;
cutting a semiconductor substrate including the first semiconductor substrate and the second semiconductor substrate that are stacked, along the scribe region of the first semiconductor substrate; and
forming a moisture-resistant structure that surrounds at least a part of an outer periphery of the first and second signal processing circuits which are disposed on the same solid-state imaging device.
28. An electronic apparatus comprising:
a solid-state imaging device including:
a first substrate having a pixel circuit including a pixel array unit formed thereon; and
a second substrate having a plurality of signal processing circuits formed thereon, wherein the plurality of signal processing circuits are arranged adjacent to one another and include a spacing region therebetween,
wherein the first substrate and the second substrate are stacked,
wherein a first signal processing circuit of the plurality of signal processing circuits and a second signal processing circuit of the plurality of signal processing circuits are electrically connected, and
wherein the first signal processing circuit and the second signal processing circuit are electrically connected through a first wiring layer formed on the second substrate;
a first moisture-resistant structure that surrounds at least a part of a periphery of the first signal processing circuit; and
a second moisture-resistant structure that surrounds at least a part of a periphery of the second signal processing circuit.