IP Library Granted Patent US 9,761,412
Granted Patent B2
US 9,761,412 · App. 15/306,510 · Granted Sep 12, 2017

Ion milling apparatus and sample processing method

Inventors: Kento Horinouchi (Tokyo, JP); Atsushi Kamino (Tokyo, JP); Toru Iwaya (Tokyo, JP); Hisayuki Takasu (Tokyo, JP)
Assignee: Hitachi High-Technologies Corporation
H01J37/305G01N1/32H01J37/09H01J37/20H01J37/3053H01J2237/045H01J2237/3151
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Quick Facts
Patent No.
US 9,761,412
App. No.
15/306,510
Granted
Sep 12, 2017
Kind
B2
Abstract

Provided is a technology for suppressing a heat rise in a sample, the heat rise being generated due to ion beam irradiation at a low acceleration voltage. A blocking plate, which is different from a mask, is disposed in front of a sample. The blocking plate has an opening that overlaps a processing surface, and ion beams pass only through the opening of the blocking plate, and in the areas excluding the opening, the ion beams are blocked by the blocking plate, and the sample is not irradiated thereby. Furthermore, the heat rise in the sample is further suppressed by cooling the blocking plate.

Claims (37)

1. An ion milling apparatus to irradiate a sample with an ion beam and to thereby perform milling of the sample, the ion milling apparatus comprising:

an ion source to emit the ion beam;

a sample holder to fix the sample by placing the sample thereon;

a sample mask to cover the sample and to allow only a part of the sample to be exposed as a target of milling; and

a beam irradiation area limiting member, disposed between the sample mask and the ion source, to limit an irradiation area of the sample with the ion beam.

2. The ion milling apparatus according to claim 1 , further comprising:

a mask holder to fix the sample mask,

wherein the beam irradiation area limiting member is installed in contact with the mask holder.

3. The ion milling apparatus according to claim 2 ,

wherein the beam irradiation area limiting member comprises a folded part, extending from an end portion of the beam irradiation limiting member, to prevent the ion beam from escaping.

4. The ion milling apparatus according to claim 1 ,

wherein the beam irradiation area limiting member is disposed spatially apart from the sample mask.

5. The ion milling apparatus according to claim 1 ,

wherein the beam irradiation area limiting member is a blocking plate including a slit having a predetermined width or an opening of a predetermined size.

6. The ion milling apparatus according to claim 1 ,

wherein the beam irradiation area limiting member is configured by a blocking plate including slits having a plurality of different widths, and

the ion milling apparatus further comprises a blocking plate moving mechanism to move the beam irradiation area limiting member and to thereby allow each of the slits having the plurality of different widths to be opposite to an exposed part of the sample.

7. The ion milling apparatus according to claim 2 , further comprising:

a cooling mechanism to cool the beam irradiation area limiting member.

8. The ion milling apparatus according to claim 7 ,

wherein the beam irradiation area limiting member is formed by a material having thermal conductivity higher than that of the sample mask.

9. A sample processing method to irradiate a sample with an ion beam and to process the sample by performing ion milling of the sample, the method comprising the steps of:

placing the sample on a sample holder;

placing, on the sample placed on the sample holder, a sample mask to cover the sample and to allow only a part of the sample to be exposed as a target of milling;

disposing, between the sample mask and the ion source, a beam irradiation area limiting member to limit an irradiation area of the sample with the ion beam; and

allowing an exposed part of the sample to be irradiated with an ion beam emitted from the ion source at an acceleration voltage of approximately 3 kV via the beam irradiation area limiting member.

10. The sample processing method according to claim 9 ,

wherein the beam irradiation area limiting member is installed in contact with a mask holder to fix the sample mask.

11. The sample processing method according to claim 10 ,

wherein the beam irradiation area limiting member comprises a folded part, extending from an end portion of the beam irradiation limiting member, to prevent the ion beam from escaping.

12. The sample processing method according to claim 9 ,

wherein the beam irradiation area limiting member is disposed spatially apart from the sample mask.

13. The sample processing method according to claim 9 ,

wherein the beam irradiation area limiting member is a blocking plate including a slit having a predetermined width or an opening of a predetermined size.

14. The sample processing method according to claim 9 ,

wherein the beam irradiation area limiting member is configured by a blocking plate including slits having a plurality of different widths, and

a blocking plate moving mechanism moves the beam irradiation area limiting member and thereby allows each of the slits having the plurality of different widths to be opposite to an exposed part of the sample.

Assignments (2)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 25, 2016
From: HORINOUCHI, KENTO; KAMINO, ATSUSHI; IWAYA, TORU; TAKASU, HISAYUKI
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 040113/0936 →
Continuity (1)
Related Publication 20170047198A1 · Feb 16, 2017