Substrate processing system and substrate processing method
There is provided a substrate processing system including an etching apparatus configured to supply a gas containing fluorocarbon to generate plasma so as to perform an etching process on a film including silicon formed on a substrate, wherein the etching process is performed by using plasma through a mask formed on the film including silicon, a film forming apparatus configured to supply a gas containing carbon so as to form a film including carbon on the etched film including silicon. The film forming apparatus is provided separately from the etching apparatus, the etching apparatus performing, a first etching step in which the film including silicon is partway etched by using plasma; and a second etching step in which the film including silicon, on which the film including carbon is formed, is further etched by using plasma, the film forming apparatus performing a film forming step in which the film including carbon is formed, without generating plasma, on the film including silicon on which the first etching step has been performed.
1. A substrate processing system comprising:
a memory including a program;
a processor configured to execute the program to operate the substrate processing system;
an etching apparatus configured to supply a gas containing fluorocarbon to generate plasma so as to perform an etching process on a film including silicon formed on a substrate, wherein the etching process is performed by using plasma through a mask formed on the film including silicon;
a film forming apparatus configured to supply a gas containing carbon so as to form a film including carbon on the etched film including silicon, wherein the film forming apparatus is provided separately from the etching apparatus;
the processor is configured to execute the program to cause the etching apparatus to perform:
a first etching step in which the film including silicon is partway etched by using plasma; and
a second etching step in which the film including silicon, on which the film including carbon is formed, is further etched by using plasma,
the processor is further configured to execute the program to cause the film forming apparatus to perform a film forming step in which the film including carbon is formed on the film including silicon on which the first etching step has been performed,
wherein the processor is configured to execute the program to cause the film forming apparatus to further perform a treatment process with any of a single gas of monosilane (SiH 4 ) and a mixed gas containing monosilane after the film forming step and before the second etching step.
2. The substrate processing apparatus according to claim 1 , wherein the processor is further configured to execute the program to:
cause the etching apparatus to further perform a first ashing step in which ashing is performed on reaction product deposited on the mask, and
cause the film forming apparatus to form, in the film forming step, the film including carbon on the film including silicon on which the ashing has been performed.
3. The substrate processing apparatus according to claim 1 , wherein
the processor is further configured to execute the program to cause the film forming apparatus to form the film including carbon at least on a side wall of pattern formed on the film including silicon in the film forming step.
4. The substrate processing apparatus according to claim 1 , wherein
the processor is further configured to execute the program to cause the etching apparatus to further perform a second ashing step in which ashing is performed on the film including carbon after the second etching step.
5. The substrate processing system according to claim 1 , wherein
in the second etching step, the first film including silicon is etched, by the etching apparatus, to be penetrated.
6. The substrate processing apparatus according to claim 1 , wherein the processor is further configured to execute the program to cause the film forming apparatus to form the film including carbon after transferring the substrate from the etching apparatus to the film forming apparatus.
7. A substrate processing system comprising:
a memory including a program;
a processor configured to execute the program to operate the substrate processing system:
an etching apparatus configured to supply a gas containing fluorocarbon to generate plasma so as to perform an etching process on a first film including silicon formed on a substrate, wherein the etching process is performed by using plasma through a mask formed on the first film including silicon; and
a film forming apparatus configured to supply a gas containing carbon and a gas containing silicon so as to form a film including carbon and a second film including silicon, respectively, on the etched first film including silicon, wherein the film forming apparatus is provided separately from the etching apparatus;
the processor is configured to execute the program to cause the etching apparatus to perform:
a first etching step in which the first film including silicon is partway etched by using plasma; and
a second etching step in which the first film including silicon, on which the film including carbon and the second film including silicon are formed, is further etched by using plasma,
the processor is configured to execute the program to cause the film forming apparatus to further perform the film forming step in which the second film including silicon is formed after the film including carbon is formed on the first film including silicon on which the first etching step has been performed.
8. The substrate processing apparatus according to claim 7 , wherein
the processor is configured to execute the program to
cause the etching apparatus to further perform a first ashing step in which ashing is performed on reaction product deposited on the mask, and
cause the film forming apparatus to form, in the film forming step, the film including carbon and the second film including silicon on the first film including silicon on which the ashing has been performed.
9. The substrate processing apparatus according to claim 7 , wherein
the processor is configured to execute the program to cause the film forming apparatus to form the film including carbon and the second film including silicon at least on a side wall of pattern formed on the first film including silicon in the film forming step.
10. The substrate processing apparatus according to claim 7 , wherein the etching apparatus and the film forming apparatus are connected through a transfer chamber.
11. The substrate processing apparatus according to claim 7 , wherein the mask is a mask including metal.
12. The substrate processing apparatus according to claim 7 , wherein the processor is further configured to execute the program to cause the film forming apparatus to alternately form a plurality of films including carbon and a plurality of second films including silicon.