Top-layer membrane formation composition and method for forming resist pattern using same
View Patent ↗[Object] To provide compositions for forming a top coat layer capable of forming patterns with an excellent roughness and pattern shape in a pattern formation method by exposure to extreme ultraviolet rays, and a pattern formation method using the composition. [Means for solving problem] Provided are compositions for forming a top coat layer comprises an aromatic compound having an aromatic hydroxyl group and an aqueous solvent; and a method of forming patterns by applying the composition onto the resist surface and subjecting the resultant to exposure and development. This composition can further comprise binders.
1. A pattern formation method comprising applying a resist composition onto a substrate to form a resist composition layer; applying the composition for forming a top coat layer onto said resist composition layer
wherein said composition for forming a top coat layer comprises an aromatic compound with molecular weight of 180 to 800 having an aromatic hydroxyl group and an aqueous solvent; heating to form a resist layer and a top coat layer; exposing said resist layer through the top coat layer using an extreme ultraviolet ray; and developing the resist layer using an alkaline aqueous solution.
2. The pattern formation method according to claim 1 , wherein said aromatic compound comprises a structure selected from the group consisting of phenol backbones, naphthol backbones, hydroxyanthracene backbones, hydroxyanthraquinone backbones, bisphenol backbones, and hydroxybenzopyran backbones.
3. The pattern formation method according to claim 1 , wherein said aromatic compound further has a non-aromatic hydrophilic group.
4. The pattern formation method according to claim 3 , wherein said non-aromatic hydrophilic group is selected from the group consisting of hydroxyl groups, carboxyl groups, sulfo groups, nitro groups, cyano groups, amino groups, amide groups, nitro groups, carboxylate ester groups, and polyalkylene oxide groups.
5. The pattern formation method according to claim 1 , wherein said aromatic compound further has a deep ultraviolet absorbing group.
6. The pattern formation method according to claim 5 , wherein said deep ultraviolet absorbing group is an aromatic group.
7. The pattern formation method according to claim 1 , wherein the melting point of said aromatic compound is 100° C. or higher.
8. The pattern formation method according to claim 1 , wherein said aromatic compound does not contain an atom other than hydrogen, carbon, nitrogen, oxygen, and sulfur.
9. The pattern formation method according to claim 1 , wherein said aromatic compound is represented by the following general formula (1):
(wherein, R and R′ may be each independently hydrogen, a hydroxyl group, an unsubstituted or substituted hydrocarbon group having 1 to 10 carbon atoms, a non-aromatic hydrophilic group, or an unsubstituted or substituted deep ultraviolet absorbing group having 6 to 15 carbon atoms, or any two of R and R′ may bind together via a hydrocarbon chain that contain a hetero atom in a main chain to form a ring structure, wherein said ring structure may have a further substituent group, with the proviso that one or more Rs are hydroxyl groups).
10. The pattern formation method according to claim 1 , wherein the content of said aromatic compound is 0.01 to 10% by mass based on the total mass of said composition for forming a top coat layer.
11. The pattern formation method according to claim 1 , which composition further comprises a binder polymer.
12. The pattern formation method according to claim 11 , which said binder polymer has said deep ultraviolet absorbing group.
13. A pattern formation method according to claim 1 , wherein the wavelength of said extreme ultraviolet ray is 5 to 20 nm.
14. The pattern formation method according to claim 1 , wherein the film thickness of the top coat layer is 1 to 100 nm.
15. The pattern formation method according to claim 1 , wherein heating temperature at the said heating is 25 to 150° C.
16. The pattern formation method according to claim 1 , wherein the content of the aromatic compound contained in the composition is 0.01 to 10 percent by mass based on the total mass of the composition for forming a top coat layer.
17. The pattern formation method according to claim 1 , wherein the water content of the aqueous solvent is 70 percent by mass or higher based on the total mass of the aqueous solvent.
18. The pattern formation method according to claim 1 , wherein the composition for forming a top coat layer according to the present invention further comprises an additive.
19. The pattern formation method according to claim 18 , wherein the additive is surfactants, thickeners, coloring agents, acids, or bases and the additives added is 0.01 to 1 percent by mass based on the mass of the entire composition.