ALN CRYSTAL PREPARATION METHOD, ALN CRYSTALS, AND ORGANIC COMPOUND INCLUDING ALN CRYSTALS
An AlN crystal preparation method includes using at least one element excluding Si that fulfills the condition that a compound is not formed with either Al or N or the condition that a compound is formed with either Al or N but the standard free energy of formation of said compound is greater than the standard free energy of formation of AlN. In the preparation method, a composition including at least Al and the element is melted. Al vapor and nitrogen gas are reacted at a prescribed reaction temperature. AlN crystals are formed.
1 . A method for producing AlN crystals, comprising:
using at least one element, excluding Si, that satisfies a condition under which the element forms a compound with neither Al nor N at a predetermined reaction temperature or a condition under which the element forms a compound with any of Al and N provided that the standard free energy of formation of the compound is larger than that of AlN;
melting a composition containing at least Al and the element; and
reacting the Al vapor with nitrogen gas at a predetermined reaction temperature to produce whiskers consisting of AlN crystals from the alloy containing at least Al and the element.
2 . The method for producing AlN crystals according to claim 1 , wherein
the element used is any of Li, Mg, V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Ge, Sr and Sn.
3 . The method for producing AlN crystals according to claim 1 , wherein
the element used is an element that satisfies a condition under which the interaction energy with Al becomes negative and also satisfies a condition under which the absolute value of this interaction energy is larger than the interaction energy between Al and Ge.
4 . The method for producing AlN crystals according to claim 3 , wherein
the element used is any of Li, Cr, Fe, Co, Ni, Cu and Sr.
5 .- 9 . (canceled)
10 . AlN crystals, wherein the crystals are whiskers, and
the difference between a projection and a depression on the surface is smaller than 10 nm at a maximum.
11 .- 12 . (canceled)
13 . An organic compound comprising AlN crystals, wherein the organic compound is constituted by mixing therein crystals according to claim 10 .
14 . An electric wire obtained using an organic compound comprising AlN crystals according to claim 13 as at least any of a thermally conductive member and an insulating member.
15 . A light bulb obtained using an organic compound comprising AlN crystals according to claim 13 as at least any of a thermally conductive member and an insulating member.
16 . A motor obtained using an organic compound comprising AlN crystals according to claim 13 as at least any of a thermally conductive member and an insulating member.
17 . An electronic component obtained using an organic compound comprising AlN crystals according to claim 13 as at least any of a thermally conductive member and an insulating member.
18 . A printed circuit board obtained using an organic compound comprising AlN crystals according to claim 13 as at least any of a thermally conductive member and an insulating member.
19 . A sheet obtained using an organic compound comprising AlN crystals according to claim 13 as at least any of a thermally conductive member and an insulating member.
20 . Paper obtained using an organic compound comprising AlN crystals according to claim 13 as at least any of a thermally conductive member and an insulating member.
21 . A fiber obtained using an organic compound comprising AlN crystals according to claim 13 as at least any of a thermally conductive member and an insulating member.
22 . An AlN crystal production apparatus, comprising:
a core tube; and
a unit for heating, wherein the production is carried out by using at least one element, excluding Si, that satisfies a condition under which the element forms a compound with neither Al nor N at a predetermined reaction temperature or a condition under which the element forms a compound with any of Al and N provided that the standard free energy of formation of the compound is larger than that of AlN; melting a composition containing at least Al and the element by heating with the unit for heating in the inside of the core tube; and reacting the Al vapor with nitrogen gas at a predetermined reaction temperature to produce whiskers consisting of AlN crystals from the alloy containing at least Al and the element.