IP Library Granted Patent US 10,087,516
Granted Patent B2
US 10,087,516 · App. 15/314,980 · Granted Oct 2, 2018

Evaporation apparatus and evaporation method

Inventors: Kazuki Matsunaga (Sakai, JP); Katsuhiro Kikuchi (Sakai, JP); Shinichi Kawato (Sakai, JP); Takashi Ochi (Sakai, JP); Yuhki Kobayashi (Sakai, JP)
Assignee: Sharp Kabushiki Kaisha
C23C14/24C23C14/042C23C14/044
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Quick Facts
Patent No.
US 10,087,516
App. No.
15/314,980
Granted
Oct 2, 2018
Kind
B2
Abstract

An evaporation apparatus includes: a substrate holding section configured to hold a substrate; an evaporation mask having an opening part at a position which is opposite to one surface of the substrate; an evaporation source configured to supply the one surface with evaporated particles via the opening part and to form a film of the evaporated particles on the one surface exposed from the opening part; and a film thickness correction means configured to block a portion of an ejection path of the evaporated particles from the evaporation source toward the opening part and configured to correct a thickness of the film by changing a position at which the ejection path is blocked over time.

Claims (20)

1. An evaporation apparatus comprising:

a substrate holding section configured to hold a substrate;

an evaporation mask including an opening part at a position which is opposite to one surface of the substrate;

an evaporation source configured to supply the one surface with evaporated particles via the opening part and to form a film of the evaporated particles on the one surface exposed from the opening part; and

a film thickness correction structure including two plate-shaped members which respectively rotate in opposite directions on two shafts which are parallel to the one surface, the film thickness correction structure blocks a portion of an ejection path of the evaporated particles from the evaporation source toward the opening part and corrects a thickness of the film by changing a position at which the ejection path is blocked over time, wherein

the film thickness correction structure is controlled such that the closer a position of the one surface is to an edge of the substrate, the less the film thickness correction structure blocks the evaporated particles that contact the position of the one surface.

2. The evaporation apparatus according to claim 1 , wherein the two plate-shaped members of the film thickness correction structure are configured to be moved across the ejection path.

3. The evaporation apparatus according to claim 2 ,

wherein the evaporation source comprises a nozzle of which an opening part extends in one direction, and

the two plate-shaped members are moved at a constant speed in the one direction.

4. The evaporation apparatus according to claim 1 , wherein the two shafts are parallel to the one surface to block a portion of the ejection path,

the two plate-shaped members have a semi-circular surface, and

the semi-circular surfaces include respective ones of the two shafts at a position corresponding to a diameter of the semi-circular surface.

5. The evaporation apparatus according to claim 4 , wherein a first rotational speed of the two plate-shaped members when the two plate-shaped members block a central portion of the ejection path is different from a second rotational speed of the two plate-shaped members when the two plate-shaped members block an outer circumferential portion of the ejection path, and

a first effective area in a direction vertical to the substrate when the two plate-shaped members cross the central portion is greater than a second effective area in the direction when the two plate-shaped members cross the outer circumferential portion.

6. The evaporation apparatus according to claim 4 , wherein the two plate-shaped members are rotated about the two shafts which are parallel to the one surface while moving across the ejection path.

7. An evaporation method using the evaporation apparatus of claim 1 , the evaporation method comprising:

blocking, while evaporation is performed, by the film thickness correction structure, the portion of the ejection path of the evaporated particles from the evaporation source toward the opening part, and correcting the thickness of the film by changing the position, at which the ejection path is blocked, by the film thickness correction structure over time, and

controlling so that more the position in the one surface approaches an edge of the substrate, more the blocking of the evaporated particles is reduced.

8. The evaporation method according to claim 7 , wherein the two plate-shaped members of the film thickness correction structure are configured to be moved across the ejection path.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 30, 2016
From: MATSUNAGA, KAZUKI; KIKUCHI, KATSUHIRO; KAWATO, SHINICHI; OCHI, TAKASHI; KOBAYASHI, YUHKI
To: SHARP KABUSHIKI KAISHA
Reel/Frame 040465/0363 →
Priority Claims (1)
JP 2014-115103 · Jun 3, 2014 · national
Continuity (1)
Related Publication 20170198387A1 · Jul 13, 2017