IP Library › Granted Patent US 10,367,148
Granted Patent B2
US 10,367,148 · App. 15/315,569 · Granted Jul 30, 2019

Light-emitting device, electronic apparatus, and inspection method

Inventors: Tetsuji Fujita (Chino, JP); Yuiga Hamade (Fujimi-machi, JP)
Assignee: Seiko Epson Corporation
H01L51/0061C07D513/04C07F5/022C09K11/025C09K11/06G01R31/44H01L51/008H01L51/0058H01L51/0072H01L51/50C07F5/02C09K2211/1007C09K2211/1014C09K2211/1022C09K2211/1081H01L51/0071H01L51/5012H01L51/5072H01L2251/533H01L2251/558
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Quick Facts
Patent No.
US 10,367,148
App. No.
15/315,569
Granted
Jul 30, 2019
Kind
B2
Abstract

To provide a light-emitting element which emits light in a near-infrared region and has high efficiency and long life, and a light-emitting device, an authentication device, and an electronic apparatus, each of which includes this light-emitting element. A light-emitting device 100 of the invention includes a light-emitting element 1 A including an anode 3 , a cathode 8 , and a light-emitting layer 5 which is provided between the anode 3 and the cathode 8 and emits light in a near-infrared region by applying a current between the anode 3 and the cathode 8 , wherein the device emits visible light with a luminance of 5 cd/m 2 or more when a current is applied between the anode 3 and the cathode 8 at a current density of 300 A/cm 2 or less.

Claims (22)

1. A light-emitting device comprising a light-emitting element including an anode, a cathode, and a light-emitting layer which is provided between the anode and the cathode and emits light in a near-infrared region by applying a current between the anode and the cathode, wherein

the light-emitting device emits visible light with a luminance of 5 cd/m 2 or more when a current is applied between the anode and the cathode at a current density of 300 mA/cm 2 or less,

the light-emitting layer is constituted by including a light-emitting material and a host material which holds the light-emitting material, and

wherein the light-emitting material contains at least one of a compound represented by the following general formula (IRD-1), a compound represented by the following general formula (IRD-2), a compound represented by the following general formula (IRD-3), and a compound represented by the following general formula (IRD-4):

wherein each R independently represents an aryl group, an arylamino group, triarylamine, or a group containing at least one of the derivatives thereof,

wherein each R independently represents an aryl group, an arylamino group, triarylamine, or a group containing at least one of the derivatives thereof,

wherein X represents a carbon atom to which hydrogen is attached or a nitrogen atom, and R represents a hydrogen atom, an alkyl group, an aryl group which may have a substituent, an allyl group, an alkoxy group, or a heterocyclic group, and

wherein each R independently represents a phenyl group, a thiophenyl group, a furyl group, or a group containing at least one of the derivatives thereof.

2. The light-emitting device according to claim 1 , wherein the host material contains a compound represented by the following formula IRH-1:

wherein n represents a natural number of 1 to 12, and R each independently represents a hydrogen atom, an alkyl group, an aryl group which may have a substituent, or an arylamino group.

3. The light-emitting device according to claim 1 , wherein the content of the light-emitting material in the light-emitting layer is 4.0 wt % or less.

4. The light-emitting device according to claim 1 , wherein the light-emitting element includes an electron transport layer which is provided between the light-emitting layer and the cathode.

5. The light-emitting device according to claim 4 , wherein the electron transport layer is constituted by including a compound having an anthracene skeleton.

6. The light-emitting device according to claim 4 , wherein the thickness of the electron transport layer is 20 nm or more and 200 nm or less.

7. The light-emitting device according to claim 1 , wherein the thickness of the light-emitting layer is 5 nm or more and 100 nm or less.

8. An electronic apparatus, comprising the light-emitting device according to claim 1 .

9. An inspection method, comprising performing an inspection by observing visible light with a luminance of 5 cd/m 2 or more emitted by applying a current between the anode and the cathode at a current density of 300 mA/cm 2 or less in the light-emitting device according to claim 1 .

10. The light-emitting device according to claim 1 , wherein the host material contains a compound represented by the following formula IRH-1:

wherein n represents a natural number of 1 to 12, and R each independently represents a hydrogen atom, an alkyl group, an aryl group which may have a substituent, or an arylamino group.

11. The light-emitting device according to claim 10 , wherein the content of the light-emitting material in the light-emitting layer is 4.0 wt % or less.

12. The light-emitting device according to claim 2 , wherein the content of the light-emitting material in the light-emitting layer is 4.0 wt % or less.

13. The light-emitting device according to claim 5 , wherein the thickness of the electron transport layer is 20 nm or more and 200 nm or less.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 2, 2026
From: SEIKO EPSON CORPORATION
To: SHIHENG CREATION LIMITED
Reel/Frame 074265/0077 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 1, 2016
From: FUJITA, TETSUJI; HAMADE, YUIGA
To: SEIKO EPSON CORPORATION
Reel/Frame 040485/0349 →
Priority Claims (1)
JP 2014-114339 · Jun 2, 2014 · national
Continuity (1)
Related Publication 20170200901A1 · Jul 13, 2017
Cited By (1)
US 12,727,316