Copper chloride, CVD raw material, copper wiring film, and method for producing copper chloride
View Patent ↗Provided are: copper chloride which can provide an organometallic complex that contains impurities at a small content and therefore has high purity; a CVD raw material; a copper wiring film; and a method for producing copper chloride. Copper chloride which has purity of 6 N or more and has an Ag content of 0.5 wtppm or less.
1. A method for producing copper chloride, which comprises
providing a partition wall between a cathode and an anode, providing a hydrochloric acid-based electrolytic solution, performing an electrochemical reaction in the hydrochloric acid-based electrolytic solution using pure copper having a purity of 6N or more as an raw material anode, adjusting the pH of the electrolytic solution in a range of 9 to 10 during the electrochemical reaction to produce copper(II) chloride, and taking out a chloride precipitated on a surface of the anode, followed by washing with water and further drying to produce copper chloride having a purity of 6N or more and the Ag content of 0.5 wt ppm or less.
2. A method for producing copper chloride, which comprises providing a partition wall between a cathode and an anode, providing a hydrochloric acid-based electrolytic solution, performing an electrochemical reaction in the hydrochloric acid-based electrolytic solution using pure copper having a purity of 6N or more as a raw material anode, adjusting the pH of the electrolytic solution in a range of 9 to 10 during the electrochemical reaction to produce copper(II) chloride, and taking out a chloride precipitated on a surface of the anode, followed by washing with water and further drying to produce copper chloride having a purity of 6N or more and a total content of one or more impurities selected from the group consisting of Na, Mg, Ti, Cr, Mn, Fe, Co, Ni, Zn, As, Ag, Cd, In, Sn, Tl, and Pb of 1.0 wt ppm or less.