One example provides a device including a first transistor having a source-drain path electrically coupled between a first node and a second node. The device includes an operational amplifier having an output electrically coupled to a gate of the first transistor. The operational amplifier controls the first transistor to maintain a predetermined voltage on the first node. A first current source adds a current at the first node and a second current source subtracts the current at the second node.
1. A device comprising:
a first transistor having a source-drain path electrically coupled between a first node and a second node;
an operational amplifier having an output electrically coupled to a gate of the first transistor, the operational amplifier to control the first transistor to maintain a predetermined voltage on the first node;
a first current source to add a current at the first node;
a second current source to subtract the current at the second node;
a plurality of switches to switch the device between a first state and a second state; and
a second transistor to mirror the current from the second current source to subtract the current at the second node in the first state and to be diode connected and electrically disconnected from the second current source to provide a load at the second node in the second state.
2. The device of claim 1 , further comprising:
a controller to control each of the plurality of switches.
3. The device of claim 1 , further comprising:
a sense amplifier to electrically connect to the second node in the first state and to electrically disconnect from the second node in the second state.
4. The device of claim 1 , further comprising:
a resistive memory array electrically coupled to the first node.
5. A device comprising:
a resistive memory array;
a sense amplifier; and
a clamp circuit comprising a first transistor having a source-drain path electrically coupled between the resistive memory array and the sense amplifier, a first current source to add a current at a first node between the source-drain path of the first transistor and the resistive memory array, and a second current source to subtract, in a first state, the current from a second node between the source-drain path of the first transistor and the sense amplifier, wherein the clamp circuit comprises a second transistor having a source-drain path, a first side of the source-drain path of the second transistor electrically coupled to the second node, the second transistor to mirror the second current source in the first state and to be electrically disconnected from the second current source and diode connected in a second state.
6. The device of claim 5 , wherein the clamp circuit comprises a switch to electrically connect the source-drain path of the first transistor to the sense amplifier in the first state and to electrically disconnect the source-drain path of the first transistor from the sense amplifier in the second state.
7. The device of claim 5 , wherein the clamp circuit comprises a switch to electrically connect the second current source to the second transistor in the first state and electrically disconnect the second current source from the second transistor in the second state.
8. The device of claim 5 , wherein the clamp circuit comprises a switch such that the second transistor mirrors the second current source to subtract the current in the first state and to diode connect the second transistor in the second state.
9. The device of claim 5 , wherein the clamp circuit comprises an operational amplifier having an output electrically coupled to the gate of the first transistor, the operational amplifier to maintain a predetermined voltage at the first node.
10. A method comprising:
maintaining a predetermined voltage on a first node between a resistive memory array and a first side of a source-drain path of a first transistor;
adding a current at the first node;
in a first state, subtracting the current at a second node between a second side of the source-drain path of the first transistor and a sense amplifier such that a current sensed by the sense amplifier substantially equals a current from the resistive memory array;
in a second state, electrically connecting a load to the second node,
in a first sub-state of the first state, sampling via the sense amplifier, a leakage current of the resistive memory array; and
in a second sub-state of the first state, sampling via the sense amplifier, a current of a selected resistive memory cell.
11. The method of claim 10 , wherein in the first state, subtracting the current at the second node comprises mirroring a current source via a second transistor; and
wherein in the second state, electrically connecting the load to the second node comprises diode connecting the second transistor and electrically disconnecting the current source from the second transistor.
12. The method of claim 10 , wherein maintaining the predetermined voltage on the first node comprises controlling the first transistor via an operational amplifier based on a feedback voltage from the first node and a bias voltage.