Optoelectronic device with silicon slice cover arranged downstream of a conversion element
View Patent ↗The invention relates to an optoelectronic component ( 10 ) comprising —a radiation-emitting semiconductor chip ( 2 ), —a conversion element ( 8 ) which is suitable for converting at least one part of the radiation ( 12 ) emitted by the semiconductor chip ( 2 ) into a converted radiation ( 13 ), said converted radiation ( 13 ) having a longer wavelength than the emitted radiation ( 12 ), and —a cover ( 9 ) which is permeable at least to the converted radiation ( 13 ) and which follows the conversion element ( 8 ) in a main emission direction, wherein —the conversion element ( 8 ) comprises a quantum dot converter material ( 7 ), —the conversion element ( 8 ) is arranged on a cover ( 9 ) inner face ( 15 ) facing the semiconductor chip, and —the cover has silicon ( 9 ) or consists of silicon.
1. An optoelectronic device, comprising:
a radiation-emitting semiconductor chip, wherein the emitted radiation is infrared radiation having a wavelength of <1100 nm;
a conversion element comprising a quantum dot converter material suitable for converting at least part of the emitted radiation into converted radiation, wherein the converted radiation from the quantum dot converter material is infrared radiation having a wavelength of >1200 nm; and
a cover which is substantially transmissive for the converted radiation and which is arranged downstream of the conversion element in a main emission direction,
wherein the conversion element is arranged on an inner side of the cover facing the semiconductor chip,
wherein the cover comprises silicon or is a silicon slice comprising an absorption edge, which lies at around 1100 nm, and
wherein the cover effectively suppresses the emitted radiation.
2. The optoelectronic device according to claim 1 , wherein the cover is between 100 μm and 500 μm thick.
3. The optoelectronic device according to claim 1 , wherein an outer side of the cover remote from the semiconductor chip comprises a pattern for shaping the beam of radiation emitted by the optoelectronic device.
4. The optoelectronic device according to claim 3 , wherein the pattern is a microlens pattern or a microprism pattern.
5. The optoelectronic device according to claim 1 , wherein an outer side of the cover remote from the semiconductor chip comprises roughening.
6. The optoelectronic device according to claim 1 , wherein an outer side of the cover remote from the semiconductor chip comprises an antireflection coating.
7. The optoelectronic device according to claim 1 , wherein the cover is connected thermally conductively with a package of the optoelectronic device.
8. The optoelectronic device according to claim 1 , wherein the radiation-emitting semiconductor chip comprises an active layer, which comprises Al n Ga m In 1-n-m As with 0≤n≤1, 0≤m≤1 and n+m≤1.
9. The optoelectronic device according to claim 1 , wherein the radiation-emitting semiconductor chip is an IR luminescent diode chip or an IR semiconductor laser chip.