Method for manufacturing semiconductor device
As a first grinding step, a peripheral portion of a back surface of a wafer ( 1 ) is ground with a first grindstone ( 17 ) to form a fractured layer ( 19 ) in the peripheral portion. Subsequently, as a second grinding step, a central portion of the back surface of the wafer ( 1 ) is ground with the first grindstone ( 17 ) to form a recess ( 21 ) while the peripheral portion in which the fractured layer ( 19 ) is formed is left as a rib ( 20 ). Subsequently, as a third grinding step, a bottom surface of the recess ( 21 ) is ground with a second grindstone ( 22 ) of an abrasive grain size smaller than that of the first grindstone ( 17 ) to reduce a thickness of the wafer ( 1 ).
1. A method for manufacturing a semiconductor device comprising:
a step of forming a plurality of semiconductor devices in a front surface of a wafer;
a first grinding step of grinding a peripheral portion of a back surface of the wafer with a first grindstone to form a fractured layer in the peripheral portion while a central portion of the back surface of the wafer is not ground and is left as an unground region in the first grinding step;
a second grinding step of grinding the central portion of the back surface of the wafer with the first grindstone to form a recess while the peripheral portion in which the fractured layer is formed is left as a rib; and
a third grinding step of grinding a bottom surface of the recess with a second grindstone of an abrasive grain size smaller than that of the first grindstone to reduce a thickness of the wafer.
2. The method for manufacturing a semiconductor device according to claim 1 , further comprising a step of removing the fractured layer by wet etching after the third grinding step.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein
a relative position between the first grindstone and the wafer is changed and the unground region is ground in the second grinding step.
4. The method for manufacturing a semiconductor device according to claim 3 , wherein a position of the first grindstone in the second grinding step is determined on the basis of a measured value of a width of the unground region.
5. The method for manufacturing a semiconductor device according to claim 4 , wherein an image of the wafer is subjected to image processing to measure the width of the unground region.
6. The method for manufacturing a semiconductor device according to claim 4 , wherein a step of the unground region is measured along a diameter direction of the wafer to obtain the width of the unground region.
7. The method for manufacturing a semiconductor device according to claim 1 , wherein an amount of grinding in the step of providing the fractured layer is 1 μm or more.
8. The method for manufacturing a semiconductor device according to claim 1 , wherein an average grain size of the first grindstone is equal to or larger than 20 μm and equal to or smaller than 100 μm.
9. The method for manufacturing a semiconductor device according to claim 1 , wherein an average grain size of the second grindstone is equal to or smaller than 10 μm.