3D graphene transistor
A field effect transistor having a channel that comprises three-dimensional graphene foam. The subject matter of the invention concerns a three dimensional field-effect transistor having a channel based on graphene foam and the use of ionic liquid as a gate. The graphene foam is made of a three-dimensional network of single and double layer graphene that extends in all the three dimensions. Metal contacts on either end of the graphene foam form the drain and source contacts of the transistor.
1. An apparatus comprising a field-effect transistor having a channel that comprises a three-dimensional graphene foam that comprises an interconnected network of graphene strips, wherein said graphene strips are made of a form of graphene selected from the group consisting of monolayer graphene and bilayer graphene.
2. The apparatus of claim 1 , further comprising an ionic liquid, wherein said ionic liquid bathes said foam.
3. The apparatus of claim 2 , wherein said ionic liquid comprises 1-Butyl-3-methylimidazolium hexafluorophosphate.
4. The apparatus of claim 1 , wherein said strips are made of monolayer graphene.
5. The apparatus of claim 1 , further comprising a hydrophilic agent on said graphene.
6. The apparatus of claim 1 , wherein said agent comprises HfO 2 .
7. The apparatus of claim 1 , further comprising a sensor, wherein variation in a property of said transistor forms a basis for a measurement by said sensor.
8. The apparatus of claim 7 , wherein said sensor comprises a biological sensor.
9. The apparatus of claim 8 , wherein said biological sensor is configured for in vivo measurements.
10. The apparatus of claim 7 , wherein said sensor comprises a chemical sensor.
11. The apparatus of claim 7 , wherein said sensor comprises strain sensor.
12. The apparatus of claim 7 , wherein said sensor comprises a pH sensor.
13. The apparatus of claim 1 , wherein said transistor incorporates a scaffold.
14. The apparatus of claim 1 , wherein said strips are made of bilayer graphene.
15. The apparatus of claim 1 , wherein variation in a property of said transistor forms a basis for a measurement of both pH and strain.
16. The apparatus of claim 1 , wherein said transistor is a multimodal device that measures multiple inputs at the same time.
17. The apparatus of claim 1 , wherein said field-effect transistor comprises a source terminal and a drain terminal, wherein said channel defines a plane having a top side a bottom side, and a perimeter, and wherein said source and drain terminals connect to said perimeter.
18. The apparatus of claim 1 , wherein said graphene is suspended above a substrate.