IP Library Granted Patent US 10,484,797
Granted Patent B2
US 10,484,797 · App. 15/322,085 · Granted Nov 19, 2019

MEMS microphone having improved sensitivity and method for the production thereof

Inventor: Pirmin Hermann Otto Rombach (Kongens Lyngby, DK)
Assignee: EPCOS AG
H04R19/04B81B3/0075B81C1/00531H04R19/005H04R31/006B81B2201/0257B81C2201/0136H04R31/00H04R2201/003
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Quick Facts
Patent No.
US 10,484,797
App. No.
15/322,085
Granted
Nov 19, 2019
Kind
B2
Abstract

A MEMS microphone with improved sensitivity and a method for producing such a MEMS microphone are disclosed. In an embodiment the MEMS microphone includes a carrier substrate, a capacitor having two electrodes, a substrate-side anchor and an electrode anchor, wherein the substrate-side anchor connects the substrate to the capacitor, wherein the electrode anchor connects the two electrodes of the capacitor, wherein one of the electrodes is a backplate and the other electrode is the anchored membrane, and wherein the substrate-side anchor has a bearing area on the substrate which exceeds a minimum area necessary for a mechanical stability of the MEMS microphone by not more than the minimum area.

Claims (11)

1. A method for producing a MEMS microphone, the method comprising:

providing a carrier substrate;

arranging a lower sacrificial layer on the carrier substrate;

producing a membrane on the lower sacrificial layer;

arranging an upper sacrificial layer on the membrane; and

producing a backplate on the upper sacrificial layer,

wherein an etching rate of the lower sacrificial layer in a region which is intended to adjoin a later substrate-side anchor and/or an etching rate of the upper sacrificial layer in a region which is intended to adjoin a later capacitor anchor are/is increased after arranging the corresponding sacrificial layer.

2. The method according to claim 1 , wherein, after producing the backplate, at least one region of increased etching rate of a sacrificial layer is removed by etching.

3. The method according to claim 1 , wherein the etching rate is an etching rate for etching using an etchant HF or VHF.

4. The method according to claim 1 , wherein the etching rate is increased by ion implantation.

5. The method according to the claim 1 , wherein the etching rate is increased by implantation of P ions.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 13, 2025
From: TDK CORPORATION
To: INVENSENSE, INC.
Reel/Frame 073080/0824 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 21, 2017
From: EPCOS AG
To: TDK CORPORATION
Reel/Frame 044189/0952 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 21, 2017
From: ROMBACH, PIRMIN HERMANN OTTO
To: EPCOS AG
Reel/Frame 041320/0823 →
Priority Claims (1)
DE 10 2014 108 740 · Jun 23, 2014 · national
Continuity (1)
Related Publication 20170150277A1 · May 25, 2017