IP Library › Granted Patent US 10,193,104
Granted Patent B2
US 10,193,104 · App. 15/325,204 · Granted Jan 29, 2019

Organic light-emitting diode structure and fabrication method thereof, related display panel, and related display device

Inventors: Kai Xu (Beijing, CN); Xinwei Gao (Beijing, CN)
Assignee: BOE TECHNOLOGY GROUP CO., LTD.
H01L51/5265H01L27/3209H01L27/3244H01L51/504H01L51/5056H01L51/5072H01L51/5088H01L51/5092H01L51/5206H01L51/5221H01L51/5278H01L51/56H01L51/006H01L51/0058H01L51/5036H01L2251/301H01L2251/308H01L2251/558
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Quick Facts
Patent No.
US 10,193,104
App. No.
15/325,204
Granted
Jan 29, 2019
Kind
B2
Abstract

The present disclosure provides an organic light-emitting diode device (OLED) structure for compensating blue light emission. The OLED structure includes a substrate with a thin-film transistor layer, the substrate being substantially transparent; and a first electrode layer on the substrate, the first electrode being substantially transparent; a first light-emitting layer on the first electrode layer with one or more light-emitting portions for emitting light for compensating blue light. The OLED structure also includes a charge generation layer (CGL) with a reflective portion, the CGL on the first light-emitting layer, the reflective portion having a transmission rate for light emitted by the first light-emitting layer; a second light-emitting layer on the CGL with one or more light-emitting portions for emitting the blue light; and a second electrode layer with a reflectivity on the second light-emitting layer.

Claims (66)

1. An organic light-emitting diode device (OLED) structure for compensating blue light emission, comprising:

a substrate with a thin-film transistor (TFT) layer, the substrate being substantially transparent;

a first electrode layer on the substrate, the first electrode being substantially transparent;

a first light-emitting layer on the first electrode layer with one or more light-emitting portions for emitting light for compensating blue light;

a charge generation layer (CGL) with a reflective portion, the CGL being on the first light-emitting layer, the reflective portion of the CGL having a transmission rate for light emitted by the first light-emitting layer;

a second light-emitting layer on the CGL with one or more light-emitting portions for emitting the blue light; and

a second electrode layer with a reflectivity on the second light-emitting layer, wherein:

the OLED structure includes a microcavity structure having the CGL, the second electrode layer, and the second light-emitting layer;

the first light-emitting layer includes a green light-emitting portion for emitting green light and a red light-emitting portion for emitting red light; and

a portion of the green light and a portion of the red light transmit into the microcavity to be converted into a second portion of blue light.

2. The OLED structure according to claim 1 , wherein the reflective portion in the CGL includes a metal layer.

3. The OLED structure according to claim 2 , wherein the CGL includes an electron injection layer (EIL) and a hole injection layer (HIL), the EIL containing the metal layer.

4. The OLED structure according to claim 3 , wherein:

the EIL is made of Al and LiF; and

the HIL is made of NPB(N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine) doped with MoO 3 .

5. The OLED structure according to claim 3 , wherein:

the EIL includes an Al layer having a thickness of about 10-20 nm.

6. The OLED structure according to claim 1 , wherein the green light-emitting portion and the red light-emitting portion include at least a light-emitting material with a broad full width at half maximum (FWHM).

7. The OLED structure according to claim 6 , wherein the green light-emitting portion emits light containing blue light or light close to blue light.

8. The OLED structure according to claim 1 , wherein the first electrode layer is an anode layer and the second electrode layer is a cathode layer.

9. The OLED structure according to claim 1 , wherein the first electrode layer is made of indium tin oxide (ITO), and the second electrode layer is made of Al with a thickness of about 300 nm.

10. The OLED structure according to claim 1 , further including:

a first carrier transport layer between the first light-emitting layer and the first electrode layer; and

a second carrier transport layer between the first light-emitting layer and the CGL.

11. The OLED structure according to claim 1 , further including:

a third carrier transport layer between the second light-emitting layer and the CGL; and

a fourth carrier transport layer between the second light-emitting layer and the second electrode layer.

12. The OLED structure according to claim 1 , wherein the second light-emitting layer includes a blue light-emitting portion for emitting a first portion of the blue light.

13. The OLED structure according to claim 1 , wherein a portion of light emitted by the first light-emitting layer transmits through the CGL into the microcavity structure.

14. A method for fabricating an organic light-emitting diode (OLED) structure, comprising:

providing a substrate with a thin-film transistor layer on the substrate, the substrate being substantially transparent;

forming a first electrode layer on the substrate, the first electrode layer being substantially transparent;

forming a first light-emitting layer on the first electrode layer with one or more light-emitting portions for emitting light for compensating blue light;

forming a charge generation layer (CGL) with a reflective portion on the first light-emitting layer, the reflective portion has a transmission rate for light emitted by the first light-emitting layer;

forming a second light-emitting layer on the CGL with one or more light-emitting portions for emitting the blue light; and

forming a second electrode layer with a reflectivity on the second light-emitting layer, wherein:

the OLED structure includes a microcavity structure having the CGL, the second electrode layer, and the second light-emitting layer;

the first light-emitting layer includes a green light-emitting portion for emitting green light and a red light-emitting portion for emitting red light; and

a portion of the green light and a portion of the red light transmit into the microcavity to be converted into a second portion of blue light.

15. A display panel, including the OLED structure of claim 1 .

16. A display device, including the display panel of claim 15 .

17. The method for fabricating an organic light-emitting diode (OLED) structure according to claim 14 , wherein the green light-emitting portion and the red light-emitting portion include at least a light-emitting material with a broad full width at half maximum (FWHM).

18. The method for fabricating an organic light-emitting diode (OLED) structure according to claim 17 , wherein the green light-emitting portion emits light containing blue light or light close to blue light.

19. The method for fabricating an organic light-emitting diode (OLED) structure according to claim 14 , wherein a portion of light emitted by the first light-emitting layer transmits through the CGL into the microcavity structure.

20. The method for fabricating an organic light-emitting diode (OLED) structure according to claim 14 , wherein the CGL includes an electron injection layer (EIL) and a hole injection layer (HIL), the EIL containing the metal layer.

21. An organic light-emitting diode device (OLED) structure for compensating blue light emission, comprising:

a substrate with a thin-film transistor (TFT) layer, the substrate being substantially transparent;

a first electrode layer on the substrate, the first electrode being substantially transparent;

a first light-emitting layer on the first electrode layer with one or more light-emitting portions for emitting light for compensating blue light;

a charge generation layer (CGL) with a reflective portion, the CGL being on the first light-emitting layer, the reflective portion of the CGL having a transmission rate for light emitted by the first light-emitting layer;

a second light-emitting layer on the CGL with one or more light-emitting portions for emitting the blue light; and

a second electrode layer with a reflectivity on the second light-emitting layer, wherein:

the OLED structure includes a microcavity structure having the CGL, the second electrode layer, and the second light-emitting layer;

the first light-emitting layer includes a green light-emitting portion for emitting green light and a red light-emitting portion for emitting red light; and

the green light-emitting portion and the red light-emitting portion include at least a light-emitting material with a broad full width at half maximum (FWHM).

22. The OLED structure according to claim 21 , wherein the green light-emitting portion emits light containing blue light or light close to blue light.

23. An organic light-emitting diode device (OLED) structure for compensating blue light emission, comprising:

a substrate with a thin-film transistor (TFT) layer, the substrate being substantially transparent;

a first electrode layer on the substrate, the first electrode being substantially transparent;

a first light-emitting layer on the first electrode layer with one or more light-emitting portions for emitting light for compensating blue light;

a charge generation layer (CGL) with a reflective portion, the CGL being on the first light-emitting layer, the reflective portion of the CGL having a transmission rate for light emitted by the first light-emitting layer;

a second light-emitting layer on the CGL with one or more light-emitting portions for emitting the blue light; and

a second electrode layer with a reflectivity on the second light-emitting layer, wherein:

the OLED structure includes a microcavity structure having the CGL, the second electrode layer, and the second light-emitting layer;

the second light-emitting layer includes a blue light-emitting portion for emitting a first portion of the blue light; and

a portion of light emitted by the first light-emitting layer transmits through the CGL into the microcavity structure.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 10, 2017
From: XU, KAI; GAO, XINWEI
To: BOE TECHNOLOGY GROUP CO., LTD
Reel/Frame 041314/0071 →
Continuity (1)
Related Publication 20170294624A1 · Oct 12, 2017
Cited By (2)
US 12,426,444 US 12,543,438