IP Library › Patent Application 15325592
Patent Application
App. No. 15/325,592

FERROELECTRIC CERAMICS AND MANUFACTURING METHOD OF SAME

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Patent No.
US None
App. No.
15/325,592
Abstract

To improve a piezoelectric property. One aspect of the present invention is ferroelectric ceramics including: a Pb(Zr 1-A Ti A )O 3 film; and a Pb(Zr 1-x Ti x )O 3 film formed on the Pb(Zr 1-A Ti A )O 3 film; wherein the A and x satisfy the following Formulae 1 to 3: 0≦A≦0.1  Formula 1 0.1<x<1  Formula 2 A<x  Formula 3.

Claims (34)

1 . Ferroelectric ceramics comprising:

a Pb(Zr 1-A Ti A )O 3 film; and

a Pb(Zr 1-x Ti x )O 3 film formed on said Pb(Zr 1-A Ti A )O 3 film; wherein

said A and x satisfy the following Formulae 1 to 3:

0≦A≦0.1  Formula 1

0.1<x<1  Formula 2

A<x  Formula 3.

2 . The ferroelectric ceramics according to claim 1 , wherein

said A is 0, and

said Pb(Zr 1-A Ti A )O 3 film is a PbZrO 3 film.

3 . The ferroelectric ceramics according to claim 1 , wherein

said Pb(Zr 1-A Ti A )O 3 film is formed on an oxide film.

4 . The ferroelectric ceramics according to claim 3 , wherein

said oxide film is a Sr(Ti,Ru)O 3 film.

5 . The ferroelectric ceramics according to claim 1 , wherein

said Pb(Zr 1-A Ti A )O 3 film is formed on an electrode film.

6 . The ferroelectric ceramics according to claim 5 , wherein

said electrode film is made of an oxide or a metal.

7 . The ferroelectric ceramics according to claim 5 , wherein

said electrode film is a Pt film or an Ir film.

8 . The ferroelectric ceramics according to claim 5 , wherein

said electrode film is formed on a ZrO 2 film.

9 . The ferroelectric ceramics according to claim 5 , wherein

said electrode film is formed on a Si substrate.

10 . A manufacturing method of ferroelectric ceramics for forming a Pb(Zr 1-x Ti x )O 3 film on a Pb(Zr 1-A Ti A )O 3 film, wherein

said A and x satisfy the following Formulae 1 to 3:

0≦A≦0.1  Formula 1

0.1<x<1  Formula 2

A<x  Formula 3.

11 . The manufacturing method of ferroelectric ceramics according to claim 10 , wherein

said A is 0, and

said Pb(Zr 1-A Ti A )O 3 film is a PbZrO 3 film.

12 . The manufacturing method of ferroelectric ceramics according to claim 10 , wherein

said Pb(Zr 1-A Ti A )O 3 film is formed by coating a Pb(Zr 1-A Ti A )O 3 precursor solution on a substrate, and performing crystallization in an oxygen atmosphere at 5 atm or more.

Assignments (2)
CHANGE OF NAME Recorded Jun 29, 2018
From: YOUTEC CO., LTD.
To: ADVANCED MATERIAL TECHNOLOGIES, INC.
Reel/Frame 046463/0924 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 11, 2017
From: KIJIMA, TAKESHI
To: YOUTEC CO., LTD.
Reel/Frame 040948/0766 →