BOA liquid crystal panel based on IGZO-TFT and method for manufacturing the same
Provided is a BOA liquid crystal panel based on an IGZO-TFT and a method for manufacturing the same. The method includes steps of: (1) forming a black matrix; (2) forming a gate; (3) forming a gate insulator; (4) forming a source and a drain; (5) forming IGZO; (6) forming a passivation; (7) forming R/G/B color resist; (8) forming ITO. Copper oxide is used as a coplanar structure of the black matrix of an IGZO-TFT based BOA component, which can effectively prevent the risk of etching IGZO.
1. A method for manufacturing a BOA liquid crystal panel based on an IGZO-TFT, comprising steps of:
(1) forming a black matrix, which comprises:
forming a copper film on a substrate,
oxidizing the copper film to obtain a copper oxide film, and
patterning the copper oxide film and exposing an opening area to obtain a black matrix pattern;
(2) forming a gate, which comprises forming a gate film on the black matrix pattern, and then exposing the gate film to radiation to obtain a gate pattern, wherein the gate film is formed by physical vapor deposition, and the gate pattern is obtained by subjecting the gate film to exposure and to dry etching, and the gate pattern is made of copper;
(3) forming a gate insulator, which comprises forming a gate insulator film on the resulting structure of step (2) to form a gate insulator film;
(4) forming a source and a drain, which comprises forming a source film and a drain film on a part of the gate insulator film which covers the gate pattern, and then exposing the source and the drain film to obtain a source and a drain pattern;
(5) forming IGZO, which comprises forming a IGZO film on a part of the gate insulator film which covers the gate pattern and is between the source and the drain to obtain an IGZO pattern;
(6) forming a passivation, which comprises forming a passivation film on the resulting structure of step (5), and forming a contact hole passing through the passivation film on the source and the drain;
(7) forming R/G/B color resist, which comprises coating the resulting structure of step (6) except the contact hole, with R/G/B color resist, and exposing the coating to radiation to obtain a desired pattern; and
(8) forming ITO, which comprises covering the contact hole and the opening area with an ITO film, and exposing the ITO film to radiation to obtain an ITO pattern.
2. The method for manufacturing a BOA liquid crystal panel based on an IGZO-TFT according to claim 1 , characterized in that in step (1), the copper film is formed by physical vapor deposition.
3. The method for manufacturing a BOA liquid crystal panel based on an IGZO-TFT according to claim 1 , characterized in that in step (3), the gate insulator film is formed by chemical vapor deposition, and the gate insulator film is made of silicon dioxide.
4. The method for manufacturing a BOA liquid crystal panel based on an IGZO-TFT according to claim 1 , characterized in that in step (4), the source and the drain film are formed by physical vapor deposition, and the source pattern and the drain pattern are obtained by subjecting the source film and the drain film to exposure and to wet etching, and the source pattern and the drain pattern are made of copper.
5. The method for manufacturing a BOA liquid crystal panel based on an IGZO-TFT according to claim 1 , characterized in that in step (5), the metal oxide IGZO film is formed by physical vapor deposition, and the IGZO pattern is obtained by subjecting the IGZO film to exposure and to wet etching.
6. The method for manufacturing a BOA liquid crystal panel based on an IGZO-TFT according to claim 1 , characterized in that in step (6), the PV film is formed by chemical vapor deposition, and the PV film is made of SiO 2 .
7. The method for manufacturing a BOA liquid crystal panel based on an IGZO-TFT according to claim 1 , characterized in that in step (8), the ITO film is formed by physical vapor deposition, and the ITO pattern is obtained by subjecting the ITO film to exposure and to wet etching.
8. A BOA liquid crystal panel based on an IGZO-TFT, comprising a substrate, wherein:
the substrate is provided thereon with a black matrix pattern, an opening area of the black matrix pattern being exposed, and the black matrix pattern being provided thereon with a gate pattern made of copper, the gate pattern is obtained by subjecting a gate film to exposure and to dry etching and the gate film is formed by physical vapor deposition, wherein the substrate, the black matrix pattern, and the gate pattern are provided thereon with a gate insulator film, wherein the gate pattern covered by the gate insulator film is provided thereon with a source and a drain, wherein an IGZO film is provided on a part of the gate insulator film which covers the gate pattern covered and is between the source and the drain, wherein a passivation film is provided on the source and the drain, the IGZO film, and the gate insulator film, wherein the passivation film has a contact hole at a position corresponding to the source and the drain, and the passivation film, except the contact hole, is coated with R/G/B color resist, and the contact hole and the opening area are covered with an ITO pattern.
9. The BOA liquid crystal panel based on an IGZO-TFT according to claim 8 , characterized in that the black matrix pattern is formed of copper oxide.