Output impedance matching circuit for RF amplifier devices, and methods of manufacture thereof
A packaged RF amplifier device includes a transistor and an output circuit. The transistor includes a control terminal and first and second current carrying terminals. The output circuit is coupled between the first current carrying terminal and an output lead. The output circuit includes first and second inductive elements coupled in series. The first inductive element, which may be a first bondwire array or an integrated inductance, is coupled between the first current carrying terminal and a node. The second inductive element, which includes a second bondwire array, is coupled between the node and the output lead. The device also includes a shunt circuit with a shunt capacitor and a third bondwire array coupled between the first current carrying terminal and the shunt capacitor. The first and second inductive elements and the third bondwire array are configured to have a desired mutual inductance.
1. A packaged radio frequency (RF) amplifier device comprising:
a device substrate;
an input lead coupled to the device substrate;
an output lead coupled to the device substrate;
a transistor die coupled to a top surface of the device substrate, the transistor die including a transistor having a control terminal, a first current carrying terminal, and a second current carrying terminal, wherein the control terminal is electrically coupled to the input lead; and
an output circuit electrically coupled between the first current carrying terminal and the output lead, wherein the output circuit includes a series circuit electrically coupled between the first current carrying terminal and the output lead, wherein the series circuit includes a first inductive element coupled between the first current carrying terminal and a node, and a second inductive element coupled between the node and the output lead, wherein the first inductive element includes an integrated inductance, and the second inductive element includes a first plurality of bondwires.
2. The device of claim 1 , wherein the integrated inductance includes a plurality of conductive traces, wherein a first end of each conductive trace is electrically coupled to the first current carrying terminal, and a second end of each conductive trace is electrically coupled to a subset of the first plurality of bondwires.
3. The device of claim 1 , wherein the integrated inductance includes a conductive trace, wherein a first end of the conductive trace is electrically coupled to the first current carrying terminal, and a second end of the conductive trace is electrically coupled to the first plurality of bondwires.
4. The device of claim 1 , wherein the integrated inductance includes a plurality of integrated spiral inductors, wherein a first terminal of each integrated spiral inductor is electrically coupled to the first current carrying terminal, and a second terminal of each integrated spiral inductor is electrically coupled to a subset of the first plurality of bondwires.
5. The device of claim 1 , wherein the output circuit further comprises:
a first shunt circuit electrically coupled between the first current carrying terminal and the device substrate.
6. The device of claim 5 , wherein the first shunt circuit comprises:
a first capacitor having a first terminal and a second terminal, wherein the second terminal is electrically coupled to the device substrate; and
a second plurality of bondwires coupled between the first current carrying terminal and the first terminal of the first capacitor.
7. A packaged radio frequency (RF) amplifier device comprising:
a device substrate;
an input lead coupled to the device substrate;
an output lead coupled to the device substrate;
a transistor die coupled to a top surface of the device substrate, the transistor die including a transistor having a control terminal, a first current carrying terminal, and a second current carrying terminal, wherein the control terminal is electrically coupled to the input lead;
an output circuit electrically coupled between the first current carrying terminal and the output lead, wherein the output circuit includes a series circuit electrically coupled between the first current carrying terminal and the output lead, wherein the series circuit includes a first inductive element coupled between the first current carrying terminal and a node, and a second inductive element coupled between the node and the output lead, wherein the first inductive element includes a first plurality of bondwires, and the second inductive element includes a second plurality of bondwires;
a shunt circuit electrically coupled between the first current carrying terminal and the device substrate, wherein the shunt circuit includes
a first capacitor having a first terminal and a second terminal, wherein the second terminal is electrically coupled to the device substrate, wherein the first capacitor forms a portion of an integrated passive device, and the integrated passive device further includes a landing pad, wherein the first inductive element is the first plurality of bondwires, and the node is the landing pad, and
a third plurality of bondwires coupled between the first current carrying terminal and the first terminal of the first capacitor.
8. The device of claim 6 , wherein the first capacitor is integrated within the transistor die.
9. A packaged radio frequency (RF) amplifier device comprising:
a device substrate;
an input lead coupled to the device substrate;
an output lead coupled to the device substrate;
a transistor die coupled to a top surface of the device substrate, the transistor die including a transistor having a control terminal, a first current carrying terminal, and a second current carrying terminal, wherein the control terminal is electrically coupled to the input lead;
an output circuit electrically coupled between the first current carrying terminal and the output lead, wherein the output circuit includes a series circuit electrically coupled between the first current carrying terminal and the output lead, wherein the series circuit includes a first inductive element coupled between the first current carrying terminal and a node, and a second inductive element coupled between the node and the output lead, wherein the first inductive element includes a first plurality of bondwires, and the second inductive element includes a second plurality of bondwires;
a shunt circuit electrically coupled between the first current carrying terminal and the device substrate, wherein the shunt circuit includes
a first capacitor having a first terminal and a second terminal, wherein the second terminal is electrically coupled to the device substrate, and
a third plurality of bondwires coupled between the first current carrying terminal and the first terminal of the first capacitor, wherein a height of the third plurality of bondwires above the device substrate is significantly greater than a height of the first plurality of bondwires above the device substrate.
10. The device of claim 6 , wherein the output circuit further comprises:
a second shunt circuit electrically coupled between the output lead and the device substrate, wherein the second shunt circuit comprises:
a second capacitor having a first terminal and a second terminal, wherein the second terminal is electrically coupled to the device substrate; and
a third plurality of bondwires coupled between the output lead and the first terminal of the second capacitor.
11. The device of claim 10 , wherein the first and second capacitors form portions of an integrated passive device that is coupled to the device substrate.
12. A method of manufacturing a packaged radio frequency (RF) amplifier device, the method comprising the steps of:
coupling a transistor die to a top surface of a device substrate, the transistor die including a transistor having a control terminal, a first current carrying terminal, and a second current carrying terminal;
electrically coupling the control terminal of the transistor to an input lead; and
electrically coupling an output circuit between the first current carrying terminal of the transistor and an output lead, wherein the output circuit includes a series circuit electrically coupled between the first current carrying terminal and the output lead, wherein the series circuit includes a first inductive element coupled between the first current carrying terminal and a node, and a second inductive element coupled between the node and the output lead, wherein the first inductive element includes an integrated inductance, and the second inductive element includes a first plurality of bondwires.
13. The method of claim 12 , wherein the method further comprises:
forming the transistor die to include the integrated inductance, wherein the integrated inductance includes a plurality of conductive traces, wherein a first end of each conductive trace is electrically coupled to the first current carrying terminal; and
wherein electrically coupling the output circuit comprises electrically coupling a second end of each conductive trace to a subset of the first plurality of bondwires.
14. The method of claim 12 , wherein the method further comprises:
forming the transistor die to include the integrated inductance, wherein the integrated inductance includes a conductive trace, wherein a first end of the conductive trace is electrically coupled to the first current carrying terminal; and
wherein electrically coupling the output circuit comprises electrically coupling a second end of the conductive trace to the first plurality of bondwires.
15. The method of claim 12 , wherein the method further comprises:
forming the transistor die to include the integrated inductance, wherein the integrated inductance includes a plurality of integrated spiral inductors, wherein a first terminal of each integrated spiral inductor is electrically coupled to the first current carrying terminal; and
wherein electrically coupling the output circuit comprises electrically coupling a second terminal of each integrated spiral inductor to the first plurality of bondwires.
16. The method of claim 12 , further comprising:
electrically coupling a first shunt circuit between the first current carrying terminal and the device substrate.
17. The method of claim 16 , wherein electrically coupling the first shunt circuit comprises:
coupling a first capacitor to the device substrate, wherein the first capacitor has a first terminal and a second terminal, wherein the second terminal is electrically coupled to the device substrate; and
electrically coupling a second plurality of bondwires between the first current carrying terminal and the first terminal of the first capacitor.
18. A method of manufacturing a packaged radio frequency (RF) amplifier device, the method comprising the steps of:
coupling a transistor die to a top surface of a device substrate, the transistor die including a transistor having a control terminal, a first current carrying terminal, and a second current carrying terminal;
electrically coupling the control terminal of the transistor to an input lead;
electrically coupling a shunt circuit between the first current carrying terminal and the device substrate by
coupling a first capacitor to the device substrate, wherein the first capacitor has a first terminal and a second terminal, wherein the second terminal is electrically coupled to the device substrate, and wherein the first capacitor forms a portion of an integrated passive device, and the integrated passive device further includes a landing pad, and
electrically coupling a first plurality of bondwires between the first current carrying terminal and the first terminal of the first capacitor; and
electrically coupling an output circuit between the first current carrying terminal of the transistor and an output lead, wherein the output circuit includes a series circuit electrically coupled between the first current carrying terminal and the output lead, wherein the series circuit includes a first inductive element coupled between the first current carrying terminal and a node, and a second inductive element coupled between the node and the output lead, wherein the first inductive element includes a second plurality of bondwires, and the second inductive element includes a third plurality of bondwires, wherein the node is the landing pad, and wherein electrically coupling the output circuit comprises electrically coupling the second plurality of bondwires between the transistor die and the landing pad.
19. The method of claim 17 , wherein the first capacitor is integrated with the transistor die.
20. A method of manufacturing a packaged radio frequency (RF) amplifier device, the method comprising the steps of:
coupling a transistor die to a top surface of a device substrate, the transistor die including a transistor having a control terminal, a first current carrying terminal, and a second current carrying terminal;
electrically coupling the control terminal of the transistor to an input lead;
electrically coupling an output circuit between the first current carrying terminal of the transistor and an output lead, wherein the output circuit includes a series circuit electrically coupled between the first current carrying terminal and the output lead, wherein the series circuit includes a first inductive element coupled between the first current carrying terminal and a node, and a second inductive element coupled between the node and the output lead, wherein the first inductive element includes a first plurality of bondwires, and the second inductive element includes a second plurality of bondwires; and
electrically coupling a shunt circuit between the first current carrying terminal and the device substrate by
coupling a first capacitor to the device substrate, wherein the first capacitor has a first terminal and a second terminal, wherein the second terminal is electrically coupled to the device substrate, and
electrically coupling a third plurality of bondwires between the first current carrying terminal and the first terminal of the first capacitor, wherein a height of the third plurality of bondwires above the device substrate is significantly greater than a height of the first plurality of bondwires above the device substrate.
21. The method of claim 17 , further comprising:
electrically coupling a second shunt circuit between the output lead and the device substrate, wherein the second shunt circuit includes
a second capacitor having a first terminal and a second terminal, wherein the second terminal is electrically coupled to the device substrate, and
a third plurality of bondwires coupled between the output lead and the first terminal of the second capacitor.