Light-emitting device and manufacturing method thereof
An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
1. An electronic device comprising a display panel having a display region, and a housing incorporating the display panel,
wherein the display panel comprises a display element and a transistor electrically connected to the display element,
wherein the transistor is formed over a first insulating layer,
wherein the display panel includes a region where the display panel is bent,
wherein the display region overlaps with the region where the display panel is bent,
wherein the display panel comprises:
a flexible substrate;
a driving circuit portion over the flexible substrate, comprising:
the transistor comprising:
a gate over the flexible substrate;
a second insulating layer over the gate;
a semiconductor layer over the second insulating layer;
a source over the semiconductor layer;
a drain over the semiconductor layer;
a third insulating layer over the semiconductor layer, the source, and the drain, a part of the third insulating layer being in contact with a part of the semiconductor layer between the source and the drain; and
a conductive layer over the third insulating layer, the conductive layer overlapping with the gate and a channel region of the transistor, wherein the channel region is between the source and the drain; and
a terminal portion comprising:
a first electrode layer over the flexible substrate;
the second insulating layer over the first electrode layer, the second insulating layer including a first contact hole;
a second electrode layer over and in contact with the first electrode layer through the first contact hole;
the third insulating layer over the second electrode layer, the third insulating layer including a second contact hole; and
a third electrode layer over and in contact with the second electrode layer through the second contact hole,
wherein the first electrode layer is formed from a same layer as the gate,
wherein the second electrode layer is formed from a same layer as the source and the drain, and
wherein the third electrode layer is formed from a same layer as the conductive layer.
2. The electronic device according to claim 1 , wherein the transistor comprises a channel formation region which comprises an oxide semiconductor material.
3. The electronic device according to claim 1 , wherein the transistor comprises a channel formation region which comprises polycrystalline silicon.
4. The electronic device according to claim 1 , wherein the electronic device is a mobile phone.
5. The electronic device according to claim 1 , wherein the flexible substrate is a plastic substrate having a light-transmitting property.
6. The electronic device according to claim 1 , wherein the flexible substrate comprises a polyester resin, a polyacrylonitrile resin, a polyimide resin, a polymethyl methacrylate resin, a polycarbonate (PC) resin, a polyethersulfone (PES) resin, a polyamide resin, a cycloolefin resin, a polystyrene resin, a polyamide imide resin, or a polyvinylchloride resin.
7. The electronic device according to claim 1 , wherein the first insulating layer comprises at least one layer selected from the group consisting of a silicon oxide layer, a silicon nitride layer, a silicon oxide layer containing nitrogen, and a silicon nitride layer containing oxygen.
8. An electronic device comprising:
a housing;
a display panel comprising a transistor, wherein the display panel comprises a display region, the display region comprising a first region and a second region, the first region disposed at a front of the housing, and the second region disposed between the first region and an edge of the display panel,
wherein the transistor is formed over a first insulating layer;
wherein the display panel is bent at least in a region between the first region and the second region,
wherein the display region overlaps with the region where the display panel is bent,
wherein the display panel comprises:
a flexible substrate;
a driving circuit portion over the flexible substrate, comprising:
the transistor comprising:
a gate over the flexible substrate;
a second insulating layer over the gate;
a semiconductor layer over the second insulating layer;
a source over the semiconductor layer;
a drain over the semiconductor layer;
a third insulating layer over the semiconductor layer, the source, and the drain, a part of the third insulating layer being in contact with a part of the semiconductor layer between the source and the drain; and
a conductive layer over the third insulating layer, the conductive layer overlapping with the gate and a channel region of the transistor, wherein the channel region is between the source and the drain; and
a terminal portion comprising:
a first electrode layer over the flexible substrate;
the second insulating layer over the first electrode layer, the second insulating layer including a first contact hole;
a second electrode layer over and in contact with the first electrode layer through the first contact hole;
the third insulating layer over the second electrode layer, the third insulating layer including a second contact hole; and
a third electrode layer over and in contact with the second electrode layer through the second contact hole,
wherein the first electrode layer is formed from a same layer as the gate,
wherein the second electrode layer is formed from a same layer as the source and the drain, and
wherein the third electrode layer is formed from a same layer as the conductive layer.
9. The electronic device according to claim 8 , wherein the transistor comprises a channel formation region which comprises an oxide semiconductor material.
10. The electronic device according to claim 8 , wherein the transistor comprises a channel formation region which comprises polycrystalline silicon.
11. The electronic device according to claim 8 , wherein the electronic device is a mobile phone.
12. The electronic device according to claim 8 , wherein the flexible substrate is a plastic substrate having a light-transmitting property.
13. The electronic device according to claim 8 , wherein the flexible substrate comprises a polyester resin, a polyacrylonitrile resin, a polyimide resin, a polymethyl methacrylate resin, a polycarbonate (PC) resin, a polyethersulfone (PES) resin, a polyamide resin, a cycloolefin resin, a polystyrene resin, a polyamide imide resin, or a polyvinylchloride resin.
14. The electronic device according to claim 8 , wherein the first insulating layer comprises at least one layer selected from the group consisting of a silicon oxide layer, a silicon nitride layer, a silicon oxide layer containing nitrogen, and a silicon nitride layer containing oxygen.
15. An electronic device comprising:
a housing;
a display panel having a display region, wherein the display panel comprises a display element and a transistor electrically connected to the display element; and
a touch panel,
wherein the transistor is formed over a first insulating layer,
wherein the display panel includes a region where the display panel is bent,
wherein the display region and the touch panel overlap with the region where the display panel is bent,
wherein the display panel comprises:
a flexible substrate;
a driving circuit portion over the flexible substrate, comprising:
the transistor comprising:
a gate over the flexible substrate;
a second insulating layer over the gate;
a semiconductor layer over the second insulating layer;
a source over the semiconductor layer;
a drain over the semiconductor layer;
a third insulating layer over the semiconductor layer, the source, and the drain, a part of the third insulating layer being in contact with a part of the semiconductor layer between the source and the drain; and
a conductive layer over the third insulating layer, the conductive layer overlapping with the gate and a channel region of the transistor, wherein the channel region is between the source and the drain; and
a terminal portion comprising:
a first electrode layer over the flexible substrate;
the second insulating layer over the first electrode layer, the second insulating layer including a first contact hole;
a second electrode layer over and in contact with the first electrode layer through the first contact hole;
the third insulating layer over the second electrode layer, the third insulating layer including a second contact hole; and
a third electrode layer over and in contact with the second electrode layer through the second contact hole,
wherein the first electrode layer is formed from a same layer as the gate,
wherein the second electrode layer is formed from a same layer as the source and the drain, and
wherein the third electrode layer is formed from a same layer as the conductive layer.
16. The electronic device according to claim 15 , wherein the transistor comprises a channel formation region which comprises an oxide semiconductor material.
17. The electronic device according to claim 15 , wherein the transistor comprises a channel formation region which comprises polycrystalline silicon.
18. The electronic device according to claim 15 , wherein the electronic device is a mobile phone.
19. The electronic device according to claim 15 , wherein the flexible substrate is a plastic substrate having a light-transmitting property.
20. The electronic device according to claim 15 , wherein the flexible substrate comprises a polyester resin, a polyacrylonitrile resin, a polyimide resin, a polymethyl methacrylate resin, a polycarbonate (PC) resin, a polyethersulfone (PES) resin, a polyamide resin, a cycloolefin resin, a polystyrene resin, a polyamide imide resin, or a polyvinylchloride resin.
21. The electronic device according to claim 15 , wherein the first insulating layer comprises at least one layer selected from the group consisting of a silicon oxide layer, a silicon nitride layer, a silicon oxide layer containing nitrogen, and a silicon nitride layer containing oxygen.