Semiconductor light-emitting device
A semiconductor light-emitting device comprises an epitaxial structure for emitting a light and comprises an edge, a first portion and a second portion surrounding the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion, a main light-extraction surface on the epitaxial structure and comprises a first light-extraction region corresponding to the first portion and a second light-extraction region corresponding to the second portion and an edge, wherein the second portion is between the edge and the first portion.
1. A semiconductor light-emitting device comprising:
an epitaxial structure for emitting a light and comprises an edge, a first portion and a second portion surrounding the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion; and a main light-extraction surface on the epitaxial structure and comprises a first light-extraction region corresponding to the first portion and a second light-extraction region corresponding to the second portion;
wherein the second portion is between the edge and the first portion.
2. The semiconductor light-emitting device according to claim 1 , wherein, as the light passes through the main light-extraction surface, a near-field luminous intensity in the first light-extraction region is larger than a near-field luminous intensity in the second light-extraction region.
3. The semiconductor light-emitting device according to claim 1 , wherein the epitaxial structure comprising a first semiconductor stack, a second semiconductor stack, and an active layer between the first semiconductor stack and the second semiconductor stack for emitting the light, and the main light-extraction surface is on the first semiconductor stack.
4. The semiconductor light-emitting device according to claim 2 , wherein the main light-extraction surface further comprises a maximum near-field luminous intensity, and the near-field luminous intensity distributing in the first light-extraction region is between 70% and 100% of the maximum near-field luminous intensity, the near-field luminous intensity distributing in the second light-extraction region is between 0% and 70% of the maximum near-field luminous intensity, and a ratio of an area of the first light-extraction region to an area of the second light-extraction region is between 0.25 and 0.45.
5. The semiconductor light-emitting device according to claim 3 , wherein the epitaxial structure further comprises a lower surface opposite to the main light-extraction surface, and a side surface connecting the lower surface and the main light-extraction surface.
6. The semiconductor light-emitting device according to claim 5 , wherein the second portion surrounds the first portion and exposes on the side surface.
7. The semiconductor light-emitting device according to claim 5 , wherein the epitaxial structure further comprises a control layer, and the second portion is between the control layer and the lower surface.
8. The semiconductor light-emitting device according to claim 1 , wherein the doping material comprises Zn, Te or Sb.
9. The semiconductor light-emitting device according to claim 8 , wherein the concentration of the doping material in the second portion decreases along a direction from the lower surface to the control layer.
10. The semiconductor light-emitting device according to claim 3 , wherein an area of the first semiconductor stack is the same as an area of the second semiconductor stack.
11. The semiconductor light-emitting device according to claim 1 , wherein the second light-extraction region is between the first light-extraction region and the edge.
12. The semiconductor light-emitting device according to claim 1 , wherein a shape of the first light-extraction region is the same as a shape of the main light-extraction surface.
13. The semiconductor light-emitting device according to claim 1 , wherein a shape of the main light-extraction surface comprises a circle or a regular polygon.
14. The semiconductor light-emitting device according to claim 5 , further comprising an upper electrode connecting the main light-extraction surface and a second ohmic contact structure connecting the lower surface.
15. The semiconductor light-emitting device according to claim 14 , wherein the upper electrode, the second ohmic contact structure, and the first portion are overlapped in a vertical direction.
16. The semiconductor light-emitting device according to claim 14 , wherein an area of the upper electrode is between 1% and 10% of an area of the main light-extraction surface, and an area of the second ohmic contact structure is between 1% and 10% of the area of the lower surface.
17. The semiconductor light-emitting device according to claim 14 , wherein a material of the second ohmic contact structure comprises transparent conductive material.
18. The semiconductor light-emitting device according to claim 14 , further comprising a reflective stack covering the second ohmic contact structure and the second semiconductor stack.
19. The semiconductor light-emitting device according to claim 18 , further comprising a conductive substrate and an adhesive layer between the reflective stack and the conductive substrate.
20. The semiconductor light-emitting device according to claim 1 , wherein the main light-extraction surface comprises a circumference and a ratio of a thickness of the epitaxial structure to the circumference is between 2% and 20%.