Semiconductor device and method for manufacturing the same

1. A GaN-based enhancement-mode power electronic device which is normally-off, comprising:

a substrate;

a buffer layer;

a thin barrier Al(In,Ga)N/GaN heterostructure formed on the substrate, the thin barrier Al(In,Ga)N/GaN heterostructure including the buffer layer and an Al(In,Ga)N/GaN barrier layer, wherein the Al(In,Ga)N barrier layer is an AlGaN ternary alloy barrier layer with a thickness less than 10 nm or an AlInN ternary alloy barrier layer with a thickness less than 10 nm or an AlInGaN quaternary alloy barrier layer with a thickness of less than 10 nm; and

a gate, a source, and a drain formed on the thin barrier Al(In,Ga)N/GaN heterostructure;

wherein the buffer layer and the barrier layer both are a completely planar structural layer, and the thickness of the barrier layer below the gate region and in other regions are both less than 10 nm; and

wherein a SiNx passivation layer is formed on access regions between the gate and the source and between the gate and the drain, respectively, such that two-dimensional electron gas is recovered in channels of the thin barrier Al(In,Ga)N/GaN heterostructure below the SiNx passivation layer by utilizing the SiNx passivation layer with a high-density of positive fixed bulk/interface charges, so as to reduce on-resistance of the device and inhibit high-voltage current collapse in the device, wherein the thickness of the SiNx passivation layer ranges between 10 and 120 nm, and the SiNx passivation layer is grown by using Low-Pressure Chemical Vapor Deposition (LPCVD) at above 600° C. or Inductively-Coupled Plasma Chemical Vapor Deposition (ICP-CVD) at a low temperature from 20° C. to 500° C.,

wherein the SiNx passivation layer is only deposited on portions of an upper surface of the barrier layer that are between the gate and the source/the drain, in order to recover the two-dimensional electron gas in channels of the thin barrier Al(In,Ga)N/GaN heterostructure only below the SiNx passivation layer.

2. The GaN-based enhancement-mode power electronic device according to claim 1 , wherein the thin barrier Al(In,Ga)N/GaN heterostructure is formed by successively epitaxially growing a GaN buffer layer and a Al(In,Ga)N barrier layer directly on the substrate by using Metal Organic Chemical Vapor Deposition (MOCVD) or molecular beam epitaxy (MBE) to implement an enhancement-mode gate structure.

3. The GaN-based enhancement-mode power electronic device according to claim 1 , wherein the substrate is a Si substrate, a SiC substrate, a sapphire substrate or a homogeneous epitaxial GaN substrate.

4. A method for manufacturing a GaN-based enhancement-mode power electronic device, comprising:

forming a thin barrier Al(In,Ga)N/GaN heterostructure on a substrate, the thin barrier Al(In,Ga)N/GaN heterostructure including a buffer layer and an Al(In,Ga)N/GaN barrier layer, wherein the Al(In,Ga)N barrier layer is an AlGaN ternary alloy barrier with a thickness less than 10 nm or an AlInN ternary alloy barrier layer with a thickness less than 10 nm or an AlInGaN quaternary alloy barrier layer with a thickness of less than 10 nm; and

forming a gate, a source, a drain, a SiNx passivation layer on the thin barrier Al(In,Ga)N/GaN heterostructure by using a gate-first process or gate-last process, the SiNx passivation layer is formed on access regions between the gate and the source and between the gate and the drain, respectively, such that two-dimensional electron gas is recovered in channels of the thin barrier Al(In,Ga)N/GaN heterostructure below the SiNx passivation layer by utilizing the SiNx passivation layer with high-density of positive fixed bulk/interface charges, so as to reduce on-resistance of the device and inhibit high-voltage current collapse in the device, wherein the thickness of the SiNx passivation layer ranges between 10 and 120 nm, and the SiNx passivation layer is grown by using Low-Pressure Chemical Vapor Deposition (LPCVD) at above 600° C. or Inductively-Coupled Plasma Chemical Vapor Deposition (ICP-CVD) at a low temperature from 20° C. to 500° C.;

wherein the buffer layer and the barrier layer both are a completely planar structural layer, and the thickness of the barrier layer below the gate region and in other regions are both less than 10 nm, and

wherein the SiNx passivation layer is only deposited on portions of an upper surface of the barrier layer that are between the gate and the source/the drain, in order to recover the two-dimensional electron gas in channels of the thin barrier Al(In/Ga)N/GaN heterostructure only below the SiNx passivation layer.

5. The method according to claim 4 , wherein

the thin barrier Al(In,Ga)N/GaN heterostructure is formed by successively epitaxial growing a GaN layer and a thin barrier layer directly on the substrate by using Metal Organic Chemical Vapor Deposition (MOCVD) or molecular beam epitaxy (MBE);

in the gate-first process, the gate, the source and the drain are manufactured on the thin barrier Al(In,Ga)N/GaN heterostructure, and then the SiNx passivation layer is formed on access regions between the gate and the source and between the gate and the drain, respectively;

in the gate-last process, the SiNx passivation layer is manufactured on the thin barrier Al(In,Ga)N/GaN heterostructure, and then a gate opening is manufactured to a Schottky-type gate contact or a MIS-type gate contact.