Forming self-aligned dual patterning mandrel and non-mandrel interconnects

1. A method for forming conductive lines on a substrate, the method comprising:

depositing a layer of mandrel material on a substrate;

removing portions of the layer of mandrel material to form a first mandrel having a first length and a second mandrel having a second length, the first length is greater than the second length;

forming a first spacer with a first spacer material along sidewalls of the first mandrel and the second mandrel, the first spacer defining a gap between the first mandrel and the second mandrel;

depositing a layer of a second spacer material over the first spacer, the substrate, the gap, and the first mandrel and the second mandrel;

removing portions of the second spacer material to expose portions of the first mandrel, the second mandrel, and the first spacer, and form a second spacer in the gap;

removing the first mandrel and the second mandrel to expose portions of the substrate;

removing exposed portions of the substrate to form cavities;

removing the first spacer and the second spacer; and

filling the cavities with a conductive material.

2. The method of claim 1 , further comprising removing portions of the conductive material to form conductive lines in the cavities.

3. The method of claim 2 , wherein the removing portions of the conductive material includes a planarization process.

4. The method of claim 1 , wherein the layer of mandrel material includes an amorphous semiconductor material.

5. The method of claim 1 , wherein the first spacer material includes a nitride material and the second spacer material includes an oxide material.

6. The method of claim 1 , wherein the forming the first spacer includes:

depositing the first spacer material over the first mandrel, the second mandrel, and the substrate; and

removing portions of the first spacer material.

7. The method of claim 1 , wherein the substrate includes an insulator material.

8. A method for forming conductive lines on a substrate, the method comprising:

depositing a layer of mandrel material on a substrate;

removing portions of the layer of mandrel material to form a first mandrel having a first length, a portion of the first mandrel has sloped sidewalls, a second mandrel having a second length, the second mandrel having an outwardly facing sloped sidewall, and a third mandrel having the second length, the third mandrel having an outwardly facing sloped sidewall, the first length is greater than the second length, the first mandrel is arranged between the second mandrel and the third mandrel

forming a spacer along non-sloped sidewalls of the first mandrel, the second mandrel, and the third mandrel;

removing the first mandrel, the second mandrel, and the third, mandrel;

removing exposed portions of the substrate to form cavities; and

filling the cavities with a conductive material.

9. The method of claim 8 , further comprising removing portions of the conductive material to form conductive lines in the cavities.

10. The method of claim 9 , wherein the removing portions of the conductive material includes a planarization process.

11. The method of claim 8 , wherein the layer of mandrel material includes an amorphous semiconductor material.

12. The method of claim 8 , wherein the first spacer material includes a nitride material and the second spacer material includes an oxide material.

13. The method of claim 8 , wherein the forming the first spacer includes:

depositing the first spacer material over the first mandrel, the second mandrel, and the substrate; and

removing portions of the first spacer material.

14. The method of claim 8 , wherein the substrate includes an insulator material.

15. A method for forming conductive lines on a substrate, the method comprising:

depositing a layer of conductive material on a substrate;

removing portions of the layer of conductive material to form a first mandrel having a first length and a second mandrel having a second length, the first length is greater than the second length;

forming a first spacer with a first spacer material along sidewalls of the first mandrel and the second mandrel, the first spacer defining a gap between the first mandrel and the second mandrel;

depositing a layer of a second spacer material over the first spacer, the substrate, the gap, and the first mandrel and the second mandrel;

removing portions of the second spacer material to expose portions of the first mandrel, the second mandrel, and the first spacer, and form a second spacer in the gap;

depositing a second layer of conductive material over the substrate;

removing portions of the second layer of conductive material to expose portions of the first spacer and the second spacer;

removing the first spacer and the second spacer to expose portions of the substrate; and

depositing a fill material on exposed portions of the substrate.

16. The method of claim 15 , wherein the layer of mandrel material includes an amorphous semiconductor material.

17. The method of claim 15 , wherein the first spacer material includes a nitride material and the second spacer material includes an oxide material.

18. The method of claim 15 , wherein the fill material includes a semiconductor material.

19. The method of claim 15 , wherein the fill material includes an insulator material.

20. The method of claim 15 , wherein the layer of conductive material is similar to the second layer of conductive material.